Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

2012 ◽  
Vol 259 ◽  
pp. 574-581 ◽  
Author(s):  
Pablo-Ernesto Mota-Santiago ◽  
Alejandro Crespo-Sosa ◽  
José-Luis Jiménez-Hernández ◽  
Hector-Gabriel Silva-Pereyra ◽  
Jorge-Alejandro Reyes-Esqueda ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Noble Metal ◽  
Ion Irradiation ◽  
Subsequent Thermal Annealing

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

The Effect Of Ion-Implantation Induced Defects On Strain Relaxation In GexSi1−x/Si Heterostuctures

1996 ◽  
Vol 442 ◽  
Author(s):  
J. M. Glasko ◽  
J. Zou ◽  
D. J. H. Cockayne ◽  
J. Fitz Gerald ◽  
P. KringhøJ ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Ion Irradiation ◽  
Strain Relaxation ◽  
High Energy ◽  
Alloy Layer ◽  
Misfit Dislocations ◽  
Thermally Induced ◽  
Energy Irradiation ◽  
Induced Defects ◽  
Subsequent Thermal Annealing

AbstractThis study examined the effect of ion irradiation and subsequent thermal annealing on GeSi/Si strained-layer heterostructures. Comparison between samples irradiated at 253°C with low energy (23 keV) and high energy (1.0 MeV) Si ions showed that damage within the alloy layer increases the strain whereas irradiation through the layer/substrate interface decreases the strain. Loop-like defects formed at the GeSi/Si interface during high energy irradiation and interacting segments of these defects were shown to have edge character with Burgers vector a/2<110>. These defects are believed responsible for the observed strain relief. Irradiation was also shown to affect strain relaxation kinetics and defect morphologies during subsequent thermal annealing. For example, after annealing to 900°C, un-irradiated material contained thermally-induced misfit dislocations, while ion-irradiated samples showed no such dislocations.

Ion-Beam Induced Silicide Formation: Markers and Moving Species

1985 ◽  
Vol 54 ◽  
Author(s):  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Thermal Annealing ◽  
Noble Metal ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Rutherford Backscattering ◽  
Collision Cascade ◽  
Silicide Formation ◽  
Amorphous Si ◽  
Ni Silicides

ABSTRACTThe moving species in near-noble metal suicide formation was investigated using embedded markers and Rutherford backscattering. With thermal annealing of Ni-silicides, Ni is the dominant diffusing species while in ion-induced reactions both Ni and Si diffuse across the suicide. This difference in behavior is not a result of the formation of amorphous Si during ion irradiation nor is it caused by release of Si. We propose that the diffusion of Si is associated with the formation of defects in the suicide layer generated within the collision cascade.

Phase transition of Al‐Yb alloy films upon ion irradiation and thermal annealing

1992 ◽  
Vol 60 (8) ◽  
pp. 944-946 ◽  
Author(s):  
J. R. Ding ◽  
D. Z. Che ◽  
H. B. Zhang ◽  
K. Tao ◽  
B. X. Liu
Keyword(s):  
Phase Transition ◽  
Thermal Annealing ◽  
Ion Irradiation ◽  
Alloy Films

Radiation hard amorphous silicon particle sensors

2005 ◽  
Vol 862 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
C. Ballif ◽  
A. Shah ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Proton Beam ◽  
Thermal Annealing ◽  
Silicon Particle ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Significant Drop ◽  
Radiation Hard ◽  
Hydrogenated Amorphous ◽  
Subsequent Thermal Annealing

AbstractRadiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

scholarly journals Disordering of helium gas bubble superlattices in molybdenum under ion irradiation and thermal annealing

2020 ◽  
Vol 539 ◽  
pp. 152315
Author(s):  
Cheng Sun ◽  
Yipeng Gao ◽  
David J. Sprouster ◽  
Yongfeng Zhang ◽  
Di Chen ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Ion Irradiation ◽  
Gas Bubble ◽  
Helium Gas

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

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