The Effect Of Ion-Implantation Induced Defects On Strain Relaxation In GexSi1−x/Si Heterostuctures

1996 ◽  
Vol 442 ◽  
Author(s):  
J. M. Glasko ◽  
J. Zou ◽  
D. J. H. Cockayne ◽  
J. Fitz Gerald ◽  
P. KringhøJ ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Ion Irradiation ◽  
Strain Relaxation ◽  
High Energy ◽  
Alloy Layer ◽  
Misfit Dislocations ◽  
Thermally Induced ◽  
Energy Irradiation ◽  
Induced Defects ◽  
Subsequent Thermal Annealing

AbstractThis study examined the effect of ion irradiation and subsequent thermal annealing on GeSi/Si strained-layer heterostructures. Comparison between samples irradiated at 253°C with low energy (23 keV) and high energy (1.0 MeV) Si ions showed that damage within the alloy layer increases the strain whereas irradiation through the layer/substrate interface decreases the strain. Loop-like defects formed at the GeSi/Si interface during high energy irradiation and interacting segments of these defects were shown to have edge character with Burgers vector a/2<110>. These defects are believed responsible for the observed strain relief. Irradiation was also shown to affect strain relaxation kinetics and defect morphologies during subsequent thermal annealing. For example, after annealing to 900°C, un-irradiated material contained thermally-induced misfit dislocations, while ion-irradiated samples showed no such dislocations.

Ion Irradiation of GeSi/Si Strained-Layer Heterostructures

1998 ◽  
Vol 540 ◽  
Author(s):  
J.M. Glaskol ◽  
R. G. Elliman ◽  
J. Zou ◽  
D.J.H. Cockayne ◽  
J. D. Fitz Gerald
Keyword(s):  
Ion Irradiation ◽  
Strain Relaxation ◽  
Compressive Strain ◽  
High Energy ◽  
Alloy Layer ◽  
Strained Layer ◽  
Projected Range ◽  
Annealing Conditions ◽  
Temperature Irradiation ◽  
Energy Irradiation

AbstractThe strain in GeSi/Si strained layer heterostructures is studied as a function of ion-irradiation and thermal annealing conditions and correlated with the defect microstructure in the GeSi alloy layer. For room temperature irradiation, compressive strain within the alloy layer increases with increasing ion fluence for both low (projected range of ions within the alloy layer) and high energy (projected range of the ions greater than alloy thickness) irradiation. In contrast, elevated temperature irradiation results in an increase in strain for low-energy irradiation, but a decrease for high-energy irradiation. For example, strain relaxation is observed in layers irradiated with I MeV 28Si+ at 253 °C. During subsequent annealing to 750 °C, the strain is partially recovered but relaxes again at temperatures > 750°C. This behavior is shown to be consistent with the evolution of intrinsic (vacancy-type) defects within the alloy layer.

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

2012 ◽  
Vol 259 ◽  
pp. 574-581 ◽  
Author(s):  
Pablo-Ernesto Mota-Santiago ◽  
Alejandro Crespo-Sosa ◽  
José-Luis Jiménez-Hernández ◽  
Hector-Gabriel Silva-Pereyra ◽  
Jorge-Alejandro Reyes-Esqueda ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Noble Metal ◽  
Ion Irradiation ◽  
Subsequent Thermal Annealing

Radiation hard amorphous silicon particle sensors

2005 ◽  
Vol 862 ◽  
Author(s):  
N. Wyrsch ◽  
C. Miazza ◽  
S. Dunand ◽  
C. Ballif ◽  
A. Shah ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Proton Beam ◽  
Thermal Annealing ◽  
Silicon Particle ◽  
Hydrogenated Amorphous Silicon ◽  
High Energy ◽  
Significant Drop ◽  
Radiation Hard ◽  
Hydrogenated Amorphous ◽  
Subsequent Thermal Annealing

AbstractRadiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

Band Gap Engineering of Nano Scale AlGaN Epitaxial Layers by Swift Heavy Ion Irradiation

2009 ◽  
Vol 1181 ◽  
Author(s):  
SATHISH N ◽  
Devaraju G ◽  
Srinivasa Rao N ◽  
Anand Pathak ◽  
Andrzej Turos ◽  
...  
Keyword(s):  
Optical Properties ◽  
Defect Density ◽  
Ion Irradiation ◽  
Compressive Strain ◽  
Heavy Ion ◽  
High Energy ◽  
Epitaxial Layers ◽  
Algan Layer ◽  
Before And After ◽  
Energy Irradiation

AbstractEpitaxial AlGaN/GaN layers grown by MBE on SiC substrates were irradiated with 150 MeV Ag ions at a fluence of 5×1012 ions/cm2. AlGaN/GaN MQWs were grown on Sapphire substrate by MOCVD and irradiated with 200 MeV Au8+ ions at a fluence of 5×1011 ions/cm2 . These samples were used to study the effects of SHI on optical properties of AlGaN/GaN based nano structures. RBS/Channelling strain measurements were carried out at off normal axis of irradiated and unirradiated samples. In as grown samples, AlGaN layer is partially relaxed with a small compressive strain. After irradiation this compressive strain increases by 0.22% in AlGaN layer. Incident ion energy dependence of dechannelling parameter shows E1/2 dependence, which corresponds to the dislocations. Defect densities were calculated from the E1/2 graph. As a result of irradiation defect density increased on both GaN and AlGaN layer. Optical properties of AlGaN/GaN MQWs before and after irradiation have been analyzed using PL. This study shows that SHI increase the confinement effects in the MQWs and intensity of the active layer of the MQWs luminescence is increased by one order. This may be due to the induced strain in GaN and AlGaN layers. Some unwanted yellow luminescence has also been introduced by the SHI possibly due the point defects or defect luminescence from the induced dislocations in GaN bulk epitaxial layers. In this study, we present some new results concerning high energy irradiation on AlGaN/GaN heterostructures and MQWs characterized by RBS/Channelling and PL.

scholarly journals Damage Growth in Si During Self-Ion Irradiation: a Study of Ion Effects Over an Extended Energy Range

1989 ◽  
Vol 147 ◽  
Author(s):  
O. W. Holland ◽  
M. K. El-Ghor ◽  
C. W. White
Keyword(s):  
Ion Irradiation ◽  
High Energy ◽  
Medium Energy ◽  
Damage Growth ◽  
Ion Channeling ◽  
Energy Irradiation ◽  
Ion Effects ◽  
Complete Annealing ◽  
High Energy Irradiation

AbstractDamage nucleation/growth in single-crystal Si during ion irradiation is discussed. For MeV ions, the rate of growth as was well as the damage morphology are shown to vary widely along the track of the ion. This is attributed to a change in the dominant, defect-related reactions as the ion penetrates the crystal. The nature of these reactions were elucidated by studying the interaction of MeV ions with different types of defects. The defects were introduced into the Si crystal prior to high-energy irradiation by self-ion implantation at a medium energy (100 keV). Varied damage morphologies were produced by implanting different ion fluences. Electron microscopy and ion-channeling measurements, in conjunction with annealing studies, were used to characterize the damage. Subtle changes in the predamage morphology are shown to result in markedly different responses to the high-energy irradiation, ranging from complete annealing of the damage to rapid growth. These divergent responses occur over a narrow range of dose (2–3 × 1014 cm-2) of the medium-energy ions; this range also marks a transition in the growth behavior of the damage during the predamaging implantation. A model is proposed which accounts for these observations and provides insight into ion-induced growth of amorphous layers in Si and the role of the amorphous/crystalline interface in this process.

Comparison Between Ion-Beam and Thermal-Annealing Induced Solid Phase Epitaxy in Fe-Implanted Si

1993 ◽  
Vol 320 ◽  
Author(s):  
X.W. Lin ◽  
J. Desimoni ◽  
H. Bernas ◽  
Z. Liliental-Weber ◽  
J. Washburn
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Solid Phase Epitaxy ◽  
Thermally Induced ◽  
Transmission Electron ◽  
Visible Effect

Rutherford backscattering spectrometry and transmission electron microscopy were used to compare thermally induced solid phase epitaxy (SPE) with ion-beam induced epitaxial crystallization (IBIEC) of Fe-implanted Si (001). It was found that thermal annealing leads to both Si SPE and β-FeSi2 precipitation at 520°C, but has no visible effect at 320°C. In contrast, Si SPE and FeSi2 precipitation occur at both 320 and 520°C, when ion irradiation is introduced. The precipitates grow epitaxially as γ-FeSi2 at 320°C, but consist of both β-FeSi2 and γ-FeSi2 at 520°C. It was also found that thermal annealing at 520°C results in Fe segregation toward the surface, while IBIEC basically retains the as-implanted Fe profile.

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