Phase transition of Al‐Yb alloy films upon ion irradiation and thermal annealing

1992 ◽  
Vol 60 (8) ◽  
pp. 944-946 ◽  
Author(s):  
J. R. Ding ◽  
D. Z. Che ◽  
H. B. Zhang ◽  
K. Tao ◽  
B. X. Liu
Keyword(s):  
Phase Transition ◽  
Thermal Annealing ◽  
Ion Irradiation ◽  
Alloy Films

scholarly journals Modulating the phase transition temperature of giant magnetocaloric thin films by ion irradiation

2017 ◽  
Vol 1 (6) ◽  
Author(s):  
S. Cervera ◽  
M. Trassinelli ◽  
M. Marangolo ◽  
C. Carrétéro ◽  
V. Garcia ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Transition Temperature ◽  
Phase Transition Temperature ◽  
Ion Irradiation

scholarly journals Creation of pure non-crystalline diamond nanostructures via room temperature ion irradiation and subsequent thermal annealing

2021 ◽  
Author(s):  
Federico Picollo ◽  
Alfio Battiato ◽  
Federico Bosia ◽  
Fabio Scaffidi Muta ◽  
Paolo Olivero ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Room Temperature ◽  
Ion Irradiation ◽  
Group Iv ◽  
Chemical Bonds ◽  
Group Iv Elements ◽  
Silicon And Germanium ◽  
Subsequent Thermal Annealing

Carbon exhibits a remarkable range of structural forms, due to the availability of sp3, sp2 and sp1 chemical bonds. Contrarily to other group IV elements such as silicon and germanium,...

scholarly journals Strain Induced Phase Transition of WS2 by Local Dewetting of Au/Mica Film upon Annealing

Surfaces ◽  
2020 ◽  
Vol 4 (1) ◽  
pp. 1-8
Author(s):  
Tomasz Kosmala ◽  
Pawel Palczynski ◽  
Matteo Amati ◽  
Luca Gregoratti ◽  
Hikmet Sezen ◽  
...  
Keyword(s):  
Phase Transition ◽  
Transition Metal ◽  
Thermal Annealing ◽  
Tensile Strain ◽  
Structural Phase ◽  
Transition Metal Dichalcogenides ◽  
Proof Of Concept ◽  
Threshold Strain ◽  
Metal Dichalcogenides ◽  
Phase Engineering

Here, we present a proof-of-concept experiment where phase engineering at the nanoscale of 2D transition metal dichalcogenides (TMDC) flakes (from semiconducting 2H phase to metallic 1T phase) can be achieved by thermal annealing of a TMDC/Au/mica system. The local dewetting of Au particles and resulting tensile strain produced on the TMDC flakes, strongly bound to the Au surface through effective S-Au bonds, can induce a local structural phase transition. An important role is also played by the defects induced by the thermal annealing: when vacancies are present, the threshold strain needed to trigger the phase transition is significantly reduced. Scanning photoelectron microscopy (SPEM) was revealed to be the perfect tool to monitor the described phenomena.

Size characterisation of noble-metal nano-crystals formed in sapphire by ion irradiation and subsequent thermal annealing

2012 ◽  
Vol 259 ◽  
pp. 574-581 ◽  
Author(s):  
Pablo-Ernesto Mota-Santiago ◽  
Alejandro Crespo-Sosa ◽  
José-Luis Jiménez-Hernández ◽  
Hector-Gabriel Silva-Pereyra ◽  
Jorge-Alejandro Reyes-Esqueda ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Noble Metal ◽  
Ion Irradiation ◽  
Subsequent Thermal Annealing

scholarly journals Disordering of helium gas bubble superlattices in molybdenum under ion irradiation and thermal annealing

2020 ◽  
Vol 539 ◽  
pp. 152315
Author(s):  
Cheng Sun ◽  
Yipeng Gao ◽  
David J. Sprouster ◽  
Yongfeng Zhang ◽  
Di Chen ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Ion Irradiation ◽  
Gas Bubble ◽  
Helium Gas

scholarly journals Effects of Different Ion Irradiation on the Contact Resistance of Pd/Graphene Contacts

Materials ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 3928 ◽  
Author(s):  
Kashif Shahzad ◽  
Kunpeng Jia ◽  
Chao Zhao ◽  
Dahai Wang ◽  
Muhammad Usman ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Contact Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Reaction ◽  
Ion Irradiation ◽  
Metal Deposition ◽  
Pristine Graphene ◽  
Bombardment Energy ◽  
Induced Defects

The effect of ion-induced defects on graphene was studied to investigate the contact resistance of 40 nm palladium (Pd) contacting on graphene. The defect development was considered and analyzed by irradiating boron (B), carbon (C), nitrogen (N2), and argon (Ar) ions on as-transferred graphene before metallization. The bombardment energy was set at 1.5 keV and ion dose at 1 × 1014 ions/cm2. The defect yields under different ion irradiation conditions were examined by Raman spectroscopy. Although, dissolution process occurs spontaneously upon metal deposition, chemical reaction between metal and graphene is more pronounced at higher temperatures. The rapid thermal annealing (RTA) treatment was performed to improve the Pd/graphene contact after annealing at 450 °C, 500 °C, 550 °C, and 600 °C. The lowest contact resistance of 95.2 Ω-µm was achieved at 550 °C RTA with Ar ion irradiation. We have proved that ion irradiation significantly enhance the Pd/graphene contact instead of pd/pristine graphene contact. Therefore, in view of the contention of results ion induced defects before metallization plus the RTA served an excellent purpose to reduce the contact resistance.

Effects on phase transition and thermoelectric properties in the Pb-doped GeTe-Bi2Te3 alloys with thermal annealing

2019 ◽  
Vol 808 ◽  
pp. 151747 ◽  
Author(s):  
Junqin Li ◽  
Chunxiao Zhang ◽  
Yamei Feng ◽  
Chaohua Zhang ◽  
Yu Li ◽  
...  
Keyword(s):  
Phase Transition ◽  
Thermal Annealing ◽  
Thermoelectric Properties ◽  
Bi2te3 Alloys

scholarly journals Formation of multicomponent alloy particles in doped ceria under I2+ ion irradiation and thermal annealing

2020 ◽  
pp. 152638
Author(s):  
Karen Kruska ◽  
Weilin Jiang ◽  
Xuemei Wang ◽  
Lin Shao ◽  
Brian J Riley ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Ion Irradiation ◽  
Multicomponent Alloy ◽  
Doped Ceria ◽  
Alloy Particles
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