Minority carrier lifetime enhancement in multicrystalline silicon by means of a dual treatment based on porous silicon and sputter-deposition of TiO2:Cr passivation layers

2012 ◽  
Vol 258 (20) ◽  
pp. 8046-8048 ◽  
Author(s):  
A. Hajjaji ◽  
M. Ben Rabha ◽  
N. Janene ◽  
M. Gaidi ◽  
B. Bessais ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Sputter Deposition ◽  
Multicrystalline Silicon ◽  
Passivation Layers ◽  
Dual Treatment ◽  
Lifetime Enhancement

Minority carrier lifetime enhancement in multicrystalline silicon

2012 ◽  
Vol 57 (2) ◽  
pp. 21302 ◽  
Author(s):  
M. Ben Rabha ◽  
S. Belhadj Mohamed ◽  
A. Hajjaji ◽  
W. Dimassi ◽  
M. Hajji ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Lifetime Enhancement

Enhanced Light Absorption and Minority Carrier Lifetime for Pn+ Multicrystalline Silicon by Treatment with HF/H2O2-Based Solutions

2013 ◽  
Vol 712-715 ◽  
pp. 341-344
Author(s):  
Wei Ying Ou ◽  
Wei Ming Lu ◽  
Lei Zhao ◽  
Wen Jing Wang ◽  
Zhong Quan Ma
Keyword(s):  
Porous Silicon ◽  
Carrier Lifetime ◽  
Silicon Oxide ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
H2o2 Treatment ◽  
Silicon Oxide Layer ◽  
Silicon Structures ◽  
Novel Method

A novel method was proposed to form porous silicon (PS) antireflection layers and thin SiO2 films at the same time by HF/H2O2 treatment of acid-textured pn+ multicrystalline silicon. Porous silicon structures formed inside the cavities and the porosity became large with an increase of the treated time resulting in a dramatical decrease of reflectance. The reflectance decreased to less than 5% within the wavelength range of 420-970 nm after 5 min HF/H2O2 treatment. Furthermore, the minority-carrier lifetime showed an increase of about 42% for a short treated time because of the formation of a thin silicon oxide layer resulting the reduction of dangling silicon bonds in the interface between PS/Si.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

2013 ◽  
Vol 1538 ◽  
pp. 329-333 ◽  
Author(s):  
Lin Cheng ◽  
Michael J. O’Loughlin ◽  
Alexander V. Suvorov ◽  
Edward R. Van Brunt ◽  
Albert A. Burk ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Power Devices ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Oxidation Step ◽  
High Temperature Anneal ◽  
Lifetime Enhancement

ABSTRACTThis paper details the development of a technique to improve the minority carrier lifetime of 4H-SiC thick (≥ 100 μm) n-type epitaxial layers through multiple thermal oxidations. A steady improvement in lifetime is seen with each oxidation step, improving from a starting ambipolar carrier lifetime of 1.09 µs to 11.2 µs after 4 oxidation steps and a high-temperature anneal. This multiple-oxidation lifetime enhancement technique is compared to a single high-temperature oxidation step, and a carbon implantation followed by a high-temperature anneal, which are traditional ways to achieve high ambipolar lifetime in 4H-SiC n-type epilayers. The multiple oxidation treatment resulted in a high minimum carrier lifetime of 6 µs, compared to < 2 µs for other treatments. The implications of lifetime enhancement to high-voltage/high-current 4H-SiC power devices are also discussed.

Recovery of minority carrier lifetime in low-cost multicrystalline silicon

2002 ◽  
Vol 73 (2) ◽  
pp. 125-130 ◽  
Author(s):  
J. Härkönen ◽  
V-P. Lempinen ◽  
T. Juvonen ◽  
J. Kylmäluoma
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Low Cost ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon

AlxGa1−xAs minority carrier lifetime enhancement at low temperatures

2013 ◽  
Vol 103 (13) ◽  
pp. 132102 ◽  
Author(s):  
Stefan Heckelmann ◽  
David Lackner ◽  
Frank Dimroth ◽  
Andreas W. Bett
Keyword(s):  
Low Temperatures ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Enhancement
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