Spatially resolved modeling of the combined effect of dislocations and grain boundaries on minority carrier lifetime in multicrystalline silicon

2007 ◽  
Vol 101 (5) ◽  
pp. 053515 ◽  
Author(s):  
G. Stokkan ◽  
S. Riepe ◽  
O. Lohne ◽  
W. Warta
Keyword(s):  
Grain Boundaries ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Combined Effect ◽  
Multicrystalline Silicon ◽  
Spatially Resolved

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

Recovery of minority carrier lifetime in low-cost multicrystalline silicon

2002 ◽  
Vol 73 (2) ◽  
pp. 125-130 ◽  
Author(s):  
J. Härkönen ◽  
V-P. Lempinen ◽  
T. Juvonen ◽  
J. Kylmäluoma
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Low Cost ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon

Influence of stain etching on low minority carrier lifetime areas of multicrystalline silicon for solar cells

2011 ◽  
Vol 176 (18) ◽  
pp. 1541-1545 ◽  
Author(s):  
A. Montesdeoca-Santana ◽  
B. González-Díaz ◽  
E. Jiménez-Rodríguez ◽  
J. Ziegler ◽  
J.J. Velázquez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Stain Etching

Significant minority carrier lifetime improvement in red edge zone in n-type multicrystalline silicon

2013 ◽  
Vol 114 ◽  
pp. 54-58 ◽  
Author(s):  
Ville Vähänissi ◽  
Marko Yli-Koski ◽  
Antti Haarahiltunen ◽  
Heli Talvitie ◽  
Yameng Bao ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Edge Zone ◽  
Red Edge

Research on Effects of Annealing and Al Gettering on Electrical Properties of Upgraded Metallurgical Grade Multicrystalline Silicon

2012 ◽  
Vol 581-582 ◽  
pp. 483-486 ◽  
Author(s):  
Jun Feng Zhang ◽  
Wen Hui Ma ◽  
Xiu Hua Chen ◽  
Cong Zhang ◽  
Kui Xian Wei
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Metal Impurities ◽  
Back Scattering ◽  
Optimal Effect

Annealing and Al gettering were performed on upgraded metallurgical grade multicrystalline silicon (UMG multi-Si) wafers with a purity of 99.999%. The dislocation and grain boundaries of samples were characterized by optical microscopy and electron back scattering diffraction (EBSD), respectively. The minority carrier lifetime and resistivity of the Si wafers were measured using microwave photoconductance decay and four-point probe techniques, respectively. The results show that the number of dislocations in Si wafers reduced obviously after annealing and Al gettering for 2 hours at 600～1100°C. The proportion of Σ3 grain boundary increases. But the minority carrier lifetime and resistivity of the Si wafers after annealing decreases. However, the minority carrier lifetime and resistivity of the Si wafers after Al gettering increases firstly and then decreases with increasing of the annealing temperature. It is considered that the metal impurities determine electrical properties of UMG multi-Si wafers rather than dislocations and grain boundary. However, Al gettering can enhances the properties of Si wafers effectively and the optimal effect of Al gettering has been achieved at 800°C.

scholarly journals Effect of Cooling Rate During Thermal Processes on the Electrical Properties of Cast Multi-Crystalline Silicon

2021 ◽  
Author(s):  
Panbing Zhou ◽  
Shilong Liu ◽  
Naigen Zhou ◽  
Xiuqin Wei ◽  
Lang Zhou
Keyword(s):  
Grain Boundaries ◽  
Cooling Rate ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Imaging Techniques ◽  
Minority Carrier Lifetime ◽  
Test System ◽  
Structural Defects ◽  
Lifetime Test

Abstract Photoluminescence（PL）imaging techniques and the minority carrier lifetime test system were employed to investigate the variation of the interstitial iron (Fei) concentration, the recombination activity of structural defects and the minority carrier lifetime of cast multicrystalline silicon (mc-Si) in response to the cooling rate after heating. The results showed that when the mc-Si wafers are heated to high-temperature (1000 °C) and then cooled to ambient temperature with different cooling rate, the Fei concentration, the number of recombination active dislocations and grain boundaries increased as the cooling rate rises while the minority carrier lifetime decreased. If cast mc-Si is heated followed by faster cooling at 30 °C/s, the Fei concentration increase by 223% and the electrical activity of grain boundaries, dislocations and intragrain increase significantly, that is to say, the whole wafer is heavily contaminated with metal impurities, and present extremely low minority carrier lifetime.

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