Minority-carrier lifetime enhancement in edge-defined film-fed grown Si through rapid thermal processing-assisted reduction of hydrogen-defect dissociation

2005 ◽  
Vol 97 (2) ◽  
pp. 024504 ◽  
Author(s):  
Kenta Nakayashiki ◽  
Ajeet Rohatgi ◽  
Sergei Ostapenko ◽  
Igor Tarasov
Keyword(s):  
Thermal Processing ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Rapid Thermal Processing ◽  
Minority Carrier Lifetime ◽  
Lifetime Enhancement

Improvement of Minority Carrier Lifetime in Thick 4H-SiC Epi-layers by Multiple Thermal Oxidations and Anneals

2013 ◽  
Vol 1538 ◽  
pp. 329-333 ◽  
Author(s):  
Lin Cheng ◽  
Michael J. O’Loughlin ◽  
Alexander V. Suvorov ◽  
Edward R. Van Brunt ◽  
Albert A. Burk ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Power Devices ◽  
Oxidation Treatment ◽  
Temperature Oxidation ◽  
Oxidation Step ◽  
High Temperature Anneal ◽  
Lifetime Enhancement

ABSTRACTThis paper details the development of a technique to improve the minority carrier lifetime of 4H-SiC thick (≥ 100 μm) n-type epitaxial layers through multiple thermal oxidations. A steady improvement in lifetime is seen with each oxidation step, improving from a starting ambipolar carrier lifetime of 1.09 µs to 11.2 µs after 4 oxidation steps and a high-temperature anneal. This multiple-oxidation lifetime enhancement technique is compared to a single high-temperature oxidation step, and a carbon implantation followed by a high-temperature anneal, which are traditional ways to achieve high ambipolar lifetime in 4H-SiC n-type epilayers. The multiple oxidation treatment resulted in a high minimum carrier lifetime of 6 µs, compared to < 2 µs for other treatments. The implications of lifetime enhancement to high-voltage/high-current 4H-SiC power devices are also discussed.

AlxGa1−xAs minority carrier lifetime enhancement at low temperatures

2013 ◽  
Vol 103 (13) ◽  
pp. 132102 ◽  
Author(s):  
Stefan Heckelmann ◽  
David Lackner ◽  
Frank Dimroth ◽  
Andreas W. Bett
Keyword(s):  
Low Temperatures ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Enhancement

Minority carrier lifetime enhancement in multicrystalline silicon

2012 ◽  
Vol 57 (2) ◽  
pp. 21302 ◽  
Author(s):  
M. Ben Rabha ◽  
S. Belhadj Mohamed ◽  
A. Hajjaji ◽  
W. Dimassi ◽  
M. Hajji ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Lifetime Enhancement

Enhancement of Minority Carrier Lifetime in Ultra-High Voltage 4H-SiC PiN Diodes by Carbon-Film Annealing

2020 ◽  
Vol 1014 ◽  
pp. 137-143
Author(s):  
Wen Ting Zhang ◽  
Yun Lai An ◽  
Yi Ying Zha ◽  
Ling Sang ◽  
Jing Hua Xia ◽  
...  
Keyword(s):  
High Temperature ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Carbon Film ◽  
Minority Carrier Lifetime ◽  
Pin Diodes ◽  
High Temperature Anneal ◽  
Thin Carbon ◽  
Drift Layer ◽  
Lifetime Enhancement

A novel process is developed for minority carrier lifetime enhancement in ultra-high 4H-SiC PiN diodes. It comprises two separate processes. Firstly, the ultra-thick epitaxial grown drift layer (200μm) covered with a protective thin carbon film is subject to a 1500°C high-temperature anneal process in Ar atmosphere for 2 hours. Secondly, a surface passivation process is adopted to reduce the surface recombination rate. μ-PCD tests show that after high-temperature anneal, the thick drift layer shows a minority carrier lifetime increase to about 1.6 μs. PiN diodes based on the novel process are fabricated and their electric characteristics are measured. Results show a low specific on-resistance of 16.3 mΩ·cm2 at 25°C and 14 mΩ·cm2 at 125 °C. Compared with simulation results, it is shown that its effective minority carrier lifetime increase to about 5μs .Our study demonstrates that the developed novel process is effective in minority carrier lifetime enhancement in ultra-voltage 4H-SiC PiN diodes.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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