Photoluminescence and secondary ion mass spectroscopy characterization of GaAs–AlGaAs quantum wells grown on GaAs (100) substrates with different surface treatments

2009 ◽  
Vol 255 (9) ◽  
pp. 4742-4746 ◽  
Author(s):  
A. Guillén-Cervantes ◽  
Z. Rivera-Álvarez ◽  
M. López-López ◽  
I. Koudriavtsev ◽  
V.M. Sánchez-Reséndiz
Keyword(s):  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Surface Treatments ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Characterization of NiB amorphous alloys with x-ray photoelectron and secondary ion mass spectroscopy

2005 ◽  
Vol 37 (5) ◽  
pp. 459-465 ◽  
Author(s):  
S. Diplas ◽  
J. Lehrmann ◽  
S. Jørgensen ◽  
T. Våland ◽  
J. F. Watts ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Amorphous Alloys ◽  
Secondary Ion Mass Spectroscopy ◽  
X Ray ◽  
Secondary Ion

Time-of-Flight Secondary Ion Mass Spectroscopy Characterization of the Covalent Bonding between a Carbon Surface and Aryl Groups

Langmuir ◽  
2005 ◽  
Vol 21 (1) ◽  
pp. 280-286 ◽  
Author(s):  
Catherine Combellas ◽  
Frédéric Kanoufi ◽  
Jean Pinson ◽  
Fetah I. Podvorica
Keyword(s):  
Mass Spectroscopy ◽  
Time Of Flight ◽  
Covalent Bonding ◽  
Carbon Surface ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Failure Isolation of Mobile Ions Using Secondary Ion Mass Spectroscopy

1997 ◽  
Author(s):  
R. John
Keyword(s):  
Thin Films ◽  
Quantitative Analysis ◽  
Mass Spectroscopy ◽  
Solid Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
Sims Analysis ◽  
Cmos Vlsi ◽  
Mobile Ions ◽  
Secondary Ion

Abstract Secondary Ion Mass Spectroscopy (SIMS) can be applied to all elements, and it facilitates the quantitative analysis of solid surfaces, including monolayers. The method is widely used in studies of adsorption, oxidation, corrosion, catalysis, diffusion and in characterization of thin films and coatings. [1] This technique can very well be applied in semiconductor failure analysis for not only detecting the source of failure, but also isolating the failure to a particular location, which is very important for corrective action procedures. SIMS analysis was performed on a CMOS VLSI sample with suspected mobile ionic problem, and it proved to be very effective in providing details of the specific mobile ionic elements involved, source of contamination, and resident location of the mobile ions.

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