Structural optimization of HfTiSiO high-k gate dielectrics by utilizing in-situ PVD-based fabrication method

2008 ◽  
Vol 254 (19) ◽  
pp. 6119-6122 ◽  
Author(s):  
Hiroaki Arimura ◽  
Shinya Horie ◽  
Yudai Oku ◽  
Takashi Minami ◽  
Naomu Kitano ◽  
...  
Keyword(s):  
Structural Optimization ◽  
Gate Dielectrics ◽  
Fabrication Method ◽  
High K

In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

2016 ◽  
Vol 387 ◽  
pp. 274-279 ◽  
Author(s):  
Meng-Chen Tsai ◽  
Min-Hung Lee ◽  
Chin-Lung Kuo ◽  
Hsin-Chih Lin ◽  
Miin-Jang Chen
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K

Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment

2020 ◽  
Vol 109 ◽  
pp. 104933
Author(s):  
Kuei-Wen Huang ◽  
Teng-Jan Chang ◽  
Chun-Yuan Wang ◽  
Sheng-Han Yi ◽  
Chin-I. Wang ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Layer By Layer ◽  
High K

Impact of PVD-based In-situ Fabrication Method for Metal/High-k Gate Stacks

2006 ◽  
Author(s):  
Shinya Horie ◽  
Takashi Minami ◽  
Naomu Kitano ◽  
Motomu Kosuda ◽  
Heiji Watanabe ◽  
...  
Keyword(s):  
Fabrication Method ◽  
Gate Stacks ◽  
In Situ Fabrication ◽  
High K

High-K Gate Dielectrics Treated with in Situ Atomic Layer Bombardment

2019 ◽  
Vol 1 (7) ◽  
pp. 1091-1098 ◽  
Author(s):  
Teng-Jan Chang ◽  
Wei-Hao Lee ◽  
Chin-I Wang ◽  
Sheng-Han Yi ◽  
Yu-Tung Yin ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Atomic Layer ◽  
High K

Interface Engineering by PVD-Based In-Situ Fabrication Method for Advanced Metal/High-k Gate Stacks

2019 ◽  
Vol 6 (3) ◽  
pp. 71-85
Author(s):  
Heiji Watanabe ◽  
Shinya Horie ◽  
Hiroaki Arimura ◽  
Naomu Kitano ◽  
Takashi Minami ◽  
...  
Keyword(s):  
Fabrication Method ◽  
Interface Engineering ◽  
Gate Stacks ◽  
In Situ Fabrication ◽  
High K

Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO2 high-k gate dielectrics

2009 ◽  
Vol 45 (11) ◽  
pp. 570 ◽  
Author(s):  
S. Abermann ◽  
G. Pozzovivo ◽  
J. Kuzmik ◽  
C. Ostermaier ◽  
C. Henkel ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectrics ◽  
Atomic Layer ◽  
Current Collapse ◽  
Layer Deposition ◽  
High K ◽  
Pre Treatment
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