Characterization of oxide layers on amorphous Zr-based alloys by Auger electron spectroscopy with sputter depth profiling

2005 ◽  
Vol 252 (1) ◽  
pp. 162-166 ◽  
Author(s):  
S. Baunack ◽  
U. Kamachi Mudali ◽  
A. Gebert
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Oxide Layers

Characterization of iron oxide layers using Auger electron spectroscopy

2007 ◽  
Vol 253 (8) ◽  
pp. 3977-3981 ◽  
Author(s):  
Milan Bizjak ◽  
Anton Zalar ◽  
Peter Panjan ◽  
Benjamin Zorko ◽  
Borut Praček
Keyword(s):  
Iron Oxide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Oxide Layers

Sidewall-Less Depth Profiling with Auger Electron Spectroscopy

1995 ◽  
Vol 34 (Part 1, No. 12A) ◽  
pp. 6483-6486
Author(s):  
Kazuyuki Inoue ◽  
Maki Tokoro ◽  
Noritomo Suzuki ◽  
Ryohji Matsubara ◽  
KenjiNakano
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling

Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)

1978 ◽  
Vol 32 (2) ◽  
pp. 175-177 ◽  
Author(s):  
L. Bradley ◽  
Y. M. Bosworth ◽  
D. Briggs ◽  
V. A. Gibson ◽  
R. J. Oldman ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Auger Electron Spectroscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Depth Profiling ◽  
Ion Source ◽  
X Ray ◽  
Nitride Oxide ◽  
Silicon Device

The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.

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