Characterization of iron oxide layers using Auger electron spectroscopy

2007 ◽  
Vol 253 (8) ◽  
pp. 3977-3981 ◽  
Author(s):  
Milan Bizjak ◽  
Anton Zalar ◽  
Peter Panjan ◽  
Benjamin Zorko ◽  
Borut Praček
Keyword(s):  
Iron Oxide ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Oxide Layers

Electron Spectroscopic Studies of the Oxidation of Ni/Pd Alloys

1976 ◽  
Vol 31 (2) ◽  
pp. 205-210 ◽  
Author(s):  
K. Wandelt ◽  
G. Ertl
Keyword(s):  
Binding Energy ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Spectroscopic Studies ◽  
Oxide Layers ◽  
X Ray ◽  
Appearance Potential

Abstract The oxidation of polycrystalline samples of Ni/Pd-alloys at 600 °C and 2·10-5 Torr O2 has been investigated by means of Auger electron spectroscopy and soft x-ray appearance potential spectroscopy. The clean surfaces are enriched by Pd; and with increasing Pd content the binding energy of the Ni 2p-core levels was found to decrease continuously by 0.7 eV. After completion of the oxidation identical overlayers were formed on all samples (except on pure Pd!) which were identified to consist of NiO. Within the depth probed by the applied techniques (≲20 Å) the rate of oxidation was found to increase with increasing Pd content, which is in contrast to the behaviour to be expected for the growth of thick oxide layers after the formation of a coherent NiO overlayer.

Characterization of 4H-SiC pn Structures with Unstable Excess Current

2015 ◽  
Vol 821-823 ◽  
pp. 648-651
Author(s):  
Anatoly M. Strel'chuk ◽  
Eugene B. Yakimov ◽  
Alexander A. Lavrent’ev ◽  
Evgenia V. Kalinina ◽  
Alexander A. Lebedev
Keyword(s):  
Electron Beam ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Electron ◽  
Induced Current ◽  
Excess Current ◽  
Forward Current ◽  
Electron Beam Induced Current

4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)Ÿ1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.

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