SEM and HRTEM study of porous silicon—relationship between fabrication, morphology and optical properties

2004 ◽  
Vol 238 (1-4) ◽  
pp. 169-174 ◽  
Author(s):  
J. Dian ◽  
A. Macek ◽  
D. Nižňanský ◽  
I. Němec ◽  
V. Vrkoslav ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon

Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum

1997 ◽  
Vol 31 (7) ◽  
pp. 704-706 ◽  
Author(s):  
V. A. Kiselev ◽  
S. V. Polisadin ◽  
A. V. Postnikov
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Thermal Annealing

Non-linear optical properties of poly(phenylene vinylene) in porous silicon substrates

2005 ◽  
Vol 2 (9) ◽  
pp. 3222-3226 ◽  
Author(s):  
T. P. Nguyen ◽  
P. Le Rendu ◽  
C. Simos ◽  
P. X. Nguyen ◽  
V. Skarka ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Phenylene Vinylene ◽  
Silicon Substrates ◽  
Non Linear ◽  
Linear Optical Properties ◽  
Linear Optical

Etching time effect on optical properties of porous silicon for solar cells fabrication

Optik ◽  
2017 ◽  
Vol 147 ◽  
pp. 343-349 ◽  
Author(s):  
Y. Al-Douri ◽  
N. Badi ◽  
C.H. Voon
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Porous Silicon ◽  
Time Effect ◽  
Etching Time

Optical properties of porous silicon processed in tetraethyl orthosilicate

2013 ◽  
Vol 58 (2) ◽  
pp. 284-288 ◽  
Author(s):  
A. S. Len’shin ◽  
V. M. Kashkarov ◽  
V. N. Tsipenyuk ◽  
P. V. Seredin ◽  
B. L. Agapov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Tetraethyl Orthosilicate

Modification of optical properties of oxidised porous silicon by pore filling

2018 ◽  
Vol 85 ◽  
pp. 113-120 ◽  
Author(s):  
Alexander Kellarev ◽  
Shlomo Ruschin
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Pore Filling

Optical Studies of porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
T. Lin ◽  
M. E. Sixta ◽  
J. N. Cox ◽  
M. E. Delaney
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Steady State ◽  
Porous Silicon ◽  
Ftir Spectroscopy ◽  
Optical Studies ◽  
Etched Silicon ◽  
Bending Modes ◽  
P Type ◽  
Over Time

AbstractThe optical properties of both electrochemically anodized and chemically stain-etched porous silicon are presented. Fourier transform infrared (FTIR) spectroscopy showed that absorbance in stain-etched samples was 3x and 1.7x greater than in anodized samples for the SiH/SiH2 stretch and scissors-bending modes, respectively. Also, oxygen is detected in stain-etched samples immediately after formation, unlike anodized samples. Photoluminescence measurements showed different steady state characteristics. Electrochemical-etched silicon samples stored in air increased in photoluminescent intensity over time, unlike the stain-etched samples. A photoluminescent device made by anodization on epitaxial p-type material (0.4 Ωm) on n-type substrate (0.1 Ω-cm) did not exhibit electroluminescence.

scholarly journals OPTICAL PROPERTIES OF ORGANIC MICROCAVITY BASED ON POROUS SILICON BRAGG REFLECTOR

2000 ◽  
Vol 49 (10) ◽  
pp. 2083
Author(s):  
LU MING ◽  
XU SHAO-HUI ◽  
ZHANG SONG-TAO ◽  
HE JUN ◽  
XIONG ZU-HONG ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Bragg Reflector

scholarly journals Morphological and Optical Properties of Porous Silicon

2019 ◽  
Vol 37 (1B) ◽  
pp. 17-20
Author(s):  
Mohammed Mohammed ◽  
Ruqaya Shlaga
Keyword(s):  
Optical Properties ◽  
Porous Silicon
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