Optical Studies of porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
T. Lin ◽  
M. E. Sixta ◽  
J. N. Cox ◽  
M. E. Delaney
Keyword(s):  
Optical Properties ◽  
Fourier Transform ◽  
Steady State ◽  
Porous Silicon ◽  
Ftir Spectroscopy ◽  
Optical Studies ◽  
Etched Silicon ◽  
Bending Modes ◽  
P Type ◽  
Over Time

AbstractThe optical properties of both electrochemically anodized and chemically stain-etched porous silicon are presented. Fourier transform infrared (FTIR) spectroscopy showed that absorbance in stain-etched samples was 3x and 1.7x greater than in anodized samples for the SiH/SiH2 stretch and scissors-bending modes, respectively. Also, oxygen is detected in stain-etched samples immediately after formation, unlike anodized samples. Photoluminescence measurements showed different steady state characteristics. Electrochemical-etched silicon samples stored in air increased in photoluminescent intensity over time, unlike the stain-etched samples. A photoluminescent device made by anodization on epitaxial p-type material (0.4 Ωm) on n-type substrate (0.1 Ω-cm) did not exhibit electroluminescence.

Optical studies of the structure of porous silicon films formed in p-type degenerate and non-degenerate silicon

1984 ◽  
Vol 17 (35) ◽  
pp. 6535-6552 ◽  
Author(s):  
C Pickering ◽  
M I J Beale ◽  
D J Robbins ◽  
P J Pearson ◽  
R Greef
Keyword(s):  
Porous Silicon ◽  
Silicon Films ◽  
Optical Studies ◽  
P Type

Photoluminescent Photonic Devices from Nanostructured Porous Silicon Fabricated Using Lightly Doped Silicon

2009 ◽  
Vol 4 ◽  
pp. 11-17
Author(s):  
O. Sarracino Martínez ◽  
J. Escorcia-Garcia ◽  
J.M. Gracia-Jiménez ◽  
V. Agarwal
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Duty Cycle ◽  
Crystalline Silicon ◽  
Photonic Devices ◽  
Applied Current ◽  
Low Frequencies ◽  
Current Densities ◽  
P Type ◽  
Rugate Filter

In this work, we report the fabrication of porous silicon multilayers using lightly doped, p-type, silicon wafers (resistivity: 14-22 Ω-cm) by pulsed anodic etching. The optical properties have been found to be strongly dependent on the duty-cycle and frequency of the applied current. Less than 50 % of duty-cycle, at low frequencies, is found to show very rough porous silicon – crystalline silicon (PS-cSi) interface. Use of duty cycle above 50 %, in a certain range of frequencies, is found to make the interface smooth. The optical properties of the photonic devices are investigated for 50 % and 75 % of duty-cycle, for different frequencies in the range of 0-1000 Hz, using the current densities of 10, 90 and 150 mA/cm2. The possibility of fabricating rugate filter with this resistivity is also explored.

scholarly journals In Situ Photoacoustic Study of Optical Properties of P-Type (111) Porous Silicon Thin Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1314
Author(s):  
Cristian Felipe Ramirez-Gutierrez ◽  
Ivan Alonso Lujan-Cabrera ◽  
Cesar Isaza ◽  
Ely Karina Anaya Rivera ◽  
Mario Enrique Rodriguez-Garcia
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Porous Silicon ◽  
Effective Medium Theory ◽  
Pore Geometry ◽  
Medium Theory ◽  
Specular Reflectance ◽  
Silicon Thin Films ◽  
P Type

Porous silicon (PSi) on p++-type (111) silicon substrate has been fabricated by electronically etching method in hydrofluoric acid (HF) media from 5 to 110 mA/cm2 of anodizing current density. The problem of determining the optical properties of (111) PSi is board through implementing a photoacoustic (PA) technique coupled to an electrochemical cell for real-time monitoring of the formation of porous silicon thin films. PA amplitude allows the calculation of the real part of the films refractive index and porosity using the reflectance self-modulation due to the interference effect between the PSi film and the substrate that produces a periodic PA amplitude. The optical properties are studied from specular reflectance measurements fitted through genetic algorithms, transfer matrix method (TMM), and the effective medium theory, where the Maxwell Garnett (MG), Bruggeman (BR), and Looyenga (LLL) models were tested to determine the most suitable for pore geometry and compared with the in situ PA method. It was found that (111) PSi exhibit a branched pore geometry producing optical anisotropy and high scattering films.

scholarly journals Морфология, структурные и оптические свойства наноструктур кремния, полученные в растворе, содержащем гексафторосиликат водорода H-=SUB=-2-=/SUB=-(SiF-=SUB=-6-=/SUB=-)

2020 ◽  
Vol 128 (9) ◽  
pp. 1375
Author(s):  
Ш.А. Жуматова ◽  
С.М. Манаков ◽  
Е. Сагидолда ◽  
М.Б. Дарменкулова ◽  
Р.М. Азамат ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Ethyl Alcohol ◽  
Scanning Probe Microscopy ◽  
Electrochemical Etching ◽  
Scanning Probe ◽  
Silicon Nanostructures ◽  
Structural And Optical Properties ◽  
Boron Doped ◽  
P Type

Boron doped porous silicon with the observed photoluminescence with a crystallographic orientation of (100), which was fabricated based on a p-type silicon substrate using electrochemical etching in a solution containing hexafluorosilicic acid and ethyl alcohol was studied. A comparative analysis of the morphology, structural and optical properties of silicon nanostructures obtained in a solution containing H2(SiF6) and ethanol and samples obtained in a solution containing HF and ethanol was performed. Morphology, structural and optical properties were studied using scanning probe microscopy and spectrophotometry. It was shown that samples of porous silicon obtained in a solution containing H2(SiF6) and ethanol are characterized by improved optical properties, in particular, they exhibit more intense photoluminescence compared to samples obtained in solutions with HF and ethyl alcohol.

The Effect of Lewis Base Chemisorption on the Luminscence of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Jeffery L. Coffer ◽  
Sean C. Lilley ◽  
Rebecca A. Martin ◽  
Leigh Ann Files-Sesler
Keyword(s):  
Steady State ◽  
Porous Silicon ◽  
Formation Constants ◽  
Lewis Base ◽  
Force Microscopy ◽  
Atomic Force ◽  
Butyl Amine ◽  
Amine Adsorption ◽  
P Type ◽  
Ir Spectroscopic

ABSTRACTWe report here studies on the effects of Lewis base addition on the observed luminescence of porous silicon generated non-anodically from a stain etch of <100> p-type wafers and whose surface morphology has been characterized by atomic force microscopy (AFM). Addition of dilute heptane solutions of alkyl amines such as n-butyl amine (C4H7NH2) results in dramatic quenching of the steady-state photoluminescence (PL) near 625 nm. The observed fractional changes in integrated PL intensity as a function of amine concentration have been fit to a simple equilibrium model demonstrating Langmuir-type behavior from which adduct formation constants have been calculated. These steady-state PL measurements are complemented by Fourier Transform Infrared (FT IR) spectroscopic measurements monitoring the effect of amine adsorption on the silicon hydride stretching modes [v(Si-Hx)] near 2100 cm-1. Based on these results, a physical model for the amine interactions with the porous silicon surface is presented.

scholarly journals Fabrication and Optoelectronic Properties of Fluoride Tin Oxides/Porous Silicon/p-Silicon Heterojunction

2014 ◽  
Vol 36 ◽  
pp. 142-152 ◽  
Author(s):  
Hasan A. Hadi
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Porous Silicon ◽  
Band Gap ◽  
Tin Oxide ◽  
Optical Band Gap ◽  
Spray Pyrolysis Technique ◽  
Tin Oxides ◽  
Uv Visible ◽  
P Type

In this paper, formation of a nanostructure semi transparence fluoride tin oxides (FTO) by spray pyrolysis technique on porous silicon PS layer. Porous silicon PS layer was prepared by anodization of p-type silicon wafers to fabricate of the UV- Visible Fluoride-doped tin oxide /Porous silicon /p-Si heterojunction photodetector. Optical properties of FTO thin films were measured. The optical band gap of 3.77 eV for SnO2:film was deduced. From (I-V) and (C-V) measurements, the barrier height for FTO/PS diode was of 0.77 eV, and the built in voltage , which was of 0.95 V. External quantum efficiency was 55 % at 500 nm which corresponding to peak responsivity of 1.15 A/W at 1 V bias. The PS band gap in the vicinity of PS/c-Si heterojunction was 1.38 eV.

scholarly journals Динамика изменения фотолюминесценции пористого кремния после гамма-облучения

2018 ◽  
Vol 52 (8) ◽  
pp. 921
Author(s):  
М.А. Елистратова ◽  
Д.С. Полоскин ◽  
Д.Н. Горячев ◽  
И.Б. Захарова ◽  
О.М. Сресели
Keyword(s):  
Fourier Transform ◽  
Porous Silicon ◽  
Gamma Irradiation ◽  
Ftir Spectroscopy ◽  
Point Defects ◽  
Photoluminescence Spectra ◽  
Bulk Silicon ◽  
Nanoporous Silicon ◽  
Subsequent Oxidation ◽  
Quantum Size

AbstractRadiation stability of the nanoporous silicon under gamma irradiation was investigated. Changes in the properties of porous silicon under gamma irradiation were registered by measurements of photoluminescence spectra and Fourier-transform infrared (FTIR) spectroscopy. Besides the appearance of point defects and their subsequent oxidation, the significant differences were shown to be in the behavior of the porous silicon properties in comparison with that of bulk silicon apparently due to the quantum size nature of nanoporous silicon.

Effect of Surface Coverage on Porous Silicon Photoluminescence: Transmission FTIR Studies

1991 ◽  
Vol 256 ◽  
Author(s):  
M. B. Robinson ◽  
A. C. Dillon ◽  
D. R. Haynes ◽  
S. M. George
Keyword(s):  
Fourier Transform ◽  
Porous Silicon ◽  
Ftir Spectroscopy ◽  
Surface Coverage ◽  
Ultrahigh Vacuum ◽  
Photoluminescence Intensity ◽  
Ftir Studies ◽  
Photoluminescence Studies ◽  
Effect Of Surface

ABSTRACTTransmission Fourier Transform Infrared (FTIR) Spectroscopy was utilized to monitor the effect of surface coverage on photoluminescent porous silicon. These experiments were performed in situ in an ultrahigh vacuum (UHV) chamber to correlate simultaneously surface coverage and photoluminescence intensity. The goal of these FTIR and photoluminescence studies was to clarify the mechanism of the photoluminescence from porous silicon.

Conductivity Studies of Schiff Base Ligands Derived from O-Phenylenediamine and Their Co(II) and Zn(II) Complexes

2015 ◽  
Vol 12 (2) ◽  
pp. 13
Author(s):  
Muhamad Faridz Osman ◽  
Karimah Kassim
Keyword(s):  
Nuclear Magnetic Resonance ◽  
Fourier Transform ◽  
Schiff Base ◽  
Nmr Spectroscopy ◽  
Magnetic Resonance ◽  
Impedance Spectroscopy ◽  
Ftir Spectroscopy ◽  
Coordination Complexes ◽  
Frequency Range ◽  
Schiff Base Ligands

The coordination complexes of Co(II) and Zn(II) with Schiff bases derived from o-phenylenediamine and substituted 2-hydroxybenzaldehyde were prepared All compounds were characterized by Fourier transform infrared (FTIR) spectroscopy and Nuclear magnetic resonance (NMR) spectroscopy elemental analyzers. They were analyzed using impedance spectroscopy in the frequency range of 100Hz-1 MHz. LI and L2 showed higher conductivity compared to their metal complexes, which had values of 1.3 7 x 10-7 and 6.13 x 10-8 S/cm respectively. 

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