Electrochemical promotion of the SO2 oxidation over thin Pt films interfaced with YSZ in a monolithic electropromoted reactor

2011 ◽  
Vol 103 (3-4) ◽  
pp. 336-342 ◽  
Author(s):  
A. Hammad ◽  
S. Souentie ◽  
E.I. Papaioannou ◽  
S. Balomenou ◽  
D. Tsiplakides ◽  
...  
2010 ◽  
Vol 12 (8) ◽  
pp. 1133-1135 ◽  
Author(s):  
S. Souentie ◽  
L. Lizarraga ◽  
E.I. Papaioannou ◽  
C.G. Vayenas ◽  
P. Vernoux

2008 ◽  
Vol 14 (2) ◽  
pp. 97-105 ◽  
Author(s):  
Dimitrios Tsiplakides ◽  
Stella Balomenou

Electrochemical promotion (EP) of catalysis has already been recognized as 'a valuable development in catalytic research' (J. Pritchard, 1990) and as 'one of the most remarkable advances in electrochemistry since 1950' (J. O'M. Bockris, 1996). Laboratory studies have clearly elucidated the phenomenology of electrochemical promotion and have proven that EP is a general phenomenon at the interface of catalysis and electrochemistry. The major progress toward practical utilization of EP is surveyed in this paper. The focus is given on the electropromotion of industrial ammonia synthesis catalyst, the bipolar EP and the development of a novel monolithic electropromoted reactor (MEPR) in conjunction with the electropromotion of thin sputtered metal films. Future perspectives of electrochemical promotion applications in the field of hydrogen technologies are discussed.


Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.


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