scholarly journals Permanent electrochemical promotion of C3H8 oxidation over thin sputtered Pt films

2010 ◽  
Vol 12 (8) ◽  
pp. 1133-1135 ◽  
Author(s):  
S. Souentie ◽  
L. Lizarraga ◽  
E.I. Papaioannou ◽  
C.G. Vayenas ◽  
P. Vernoux
Keyword(s):  
Electrochemical Promotion ◽  
Pt Films

Electrochemical promotion of the SO2 oxidation over thin Pt films interfaced with YSZ in a monolithic electropromoted reactor

2011 ◽  
Vol 103 (3-4) ◽  
pp. 336-342 ◽  
Author(s):  
A. Hammad ◽  
S. Souentie ◽  
E.I. Papaioannou ◽  
S. Balomenou ◽  
D. Tsiplakides ◽  
...  
Keyword(s):  
Electrochemical Promotion ◽  
So2 Oxidation ◽  
Pt Films ◽  
Monolithic Electropromoted Reactor

Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch

2013 ◽  
Author(s):  
Wentao Qin ◽  
Dorai Iyer ◽  
Jim Morgan ◽  
Carroll Casteel ◽  
Robert Watkins ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxide Film ◽  
Microstructure Evolution ◽  
Depth Profiling ◽  
Surface Microstructure ◽  
The Difference ◽  
Surface Microstructures ◽  
Pt Films

Abstract Ni(5 at.%Pt ) films were silicided at a temperature below 400 °C and at 550 °C. The two silicidation temperatures had produced different responses to the subsequent metal etch. Catastrophic removal of the silicide was seen with the low silicidation temperature, while the desired etch selectivity was achieved with the high silicidation temperature. The surface microstructures developed were characterized with TEM and Auger depth profiling. The data correlate with both silicidation temperatures and ultimately the difference in the response to the metal etch. With the high silicidation temperature, there existed a thin Si-oxide film that was close to the surface and embedded with particles which contain metals. This thin film is expected to contribute significantly to the desired etch selectivity. The formation of this layer is interpreted thermodynamically.

scholarly journals Kinetic and deuterium isotope analyses of ammonia electrochemical synthesis

RSC Advances ◽  
2021 ◽  
Vol 11 (29) ◽  
pp. 17891-17900
Author(s):  
Chien-I. Li ◽  
Hiroki Matsuo ◽  
Junichiro Otomo
Keyword(s):  
Electrochemical Synthesis ◽  
Surface Reaction ◽  
Electrochemical Promotion ◽  
Isotope Analyses ◽  
Ammonia Formation

Electrochemical promotion of ammonia formation is mainly governed by surface reaction with N2 and H2 in the cathode.

Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area With Secondary Electron Image

2010 ◽  
Vol 1250 ◽  
Author(s):  
Kentaro Kinoshita ◽  
Tatsuya Makino ◽  
Yoda Takatoshi ◽  
Dobashi Kazufumi ◽  
Kishida Satoru
Keyword(s):  
Data Storage ◽  
Secondary Electron ◽  
High Resistance State ◽  
Secondary Electron Image ◽  
Resistance Change ◽  
Force Microscopy ◽  
Electron Image ◽  
Storage Area ◽  
Resistance State ◽  
Pt Films

AbstractBoth a low resistance state and a high resistance state which were written by the voltage application in a local region of NiO/Pt films by using conducting atomic force microscopy (C-AFM) were observed by using scanning electron microscope (SEM) and electron probe micro analysis (EPMA). The writing regions are distinguishable as dark areas in a secondary electron image and thus can be specified without using complicated sample fabrication process to narrow down the writing regions such as the photolithography technique. In addition, the writing regions were analyzed by using energy dispersive X-ray spectroscopy (EDS) mapping. No difference between the inside and outside of the writing regions is observed for all the mapped elements including C and Rh. Here, C and Rh are the most probable candidates for contamination which affect the secondary electron image. Therefore, our results suggested that the observed change in the contrast of the second electron image is related to the intrinsic change in the electronic state of the NiO film and a secondary electron yield is correlated to the physical properties of the film.

Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches

2017 ◽  
Vol 146 (5) ◽  
pp. 052818 ◽  
Author(s):  
I. J. M. Erkens ◽  
M. A. Verheijen ◽  
H. C. M. Knoops ◽  
W. Keuning ◽  
F. Roozeboom ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Pt Films
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