1999 ◽  
Vol 121 (2) ◽  
pp. 301-307 ◽  
Author(s):  
Paolo Ghigna ◽  
Giorgio Spinolo ◽  
Umberto Anselmi-Tamburini ◽  
Filippo Maglia ◽  
Monica Dapiaggi ◽  
...  

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 1-46
Author(s):  
Kathy Cook

Abstract not available. Outline: Company Background; Intellectual Property Status; Homogeneous Direct Bond (ZiBond) Technology; Hetergeneous Direct Bond (DBI) Technology; Wafer to Wafer (W2W) Applications; Implementation; and Summary


2010 ◽  
Vol 2010 (1) ◽  
pp. 000015-000022
Author(s):  
Paul Enquist

3D microelectronics integration and wafer scale packaging promise improvements in functional density and cost compared to conventional 2D microelectronics and packaging technologies. The realization of these improvements will require further adoption of 3D volume manufacturing process technologies. These process technologies will likely include through silicon via (TSV) and die or wafer bonding with and without 3D interconnect. Low temperature direct bond technologies have a number of inherent performance and cost advantages compared to other bonding technologies. This paper describes low temperature direct oxide bond technologies with and without a scalable 3D interconnect developed by Ziptronix and cost savings, performance and applications that will be enabled by adoption of these technologies. Enabled cost savings and performance include system or network-on-chip, system in package, and TSVs. Enabled applications include backside illuminated image sensors, micron-scale pitch vertically integrated image sensor arrays, 3D system-on-chip and 3D network-on-chip.


1982 ◽  
Vol 81 (6) ◽  
pp. 447-454 ◽  
Author(s):  
Mark E. Hixson ◽  
William A. Brantley ◽  
John J. Pincsak ◽  
John P. Conover

Author(s):  
Martin H. Weik
Keyword(s):  

Author(s):  
Meng Yang ◽  
Caiyue Liao ◽  
Chenglong Tang ◽  
Peng Zhang ◽  
Zuohua Huang ◽  
...  

Direct bond dissociations of C–NO2 are dominant at high temperatures for p- and m-nitrotolune, while O transfer are predominant at low to intermediate temperatures. For o-nitrotoluene, the H atom migration and C–NO2 bond dissociation are important.


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