Sputtered Fitas of Amorphous Hydrogenated Silicon Carbide

The field of amorphous hydrogenated silicon-carbon alloys and thin films has witnessed, since the pioneering work of Anderson and Spear [1], rapid development and has attracted scientific attention and technological interest [2,3]. However, relatively little information is known [4] about the physical mechanisms that govern the inclusion of C and H in the silicon matrix, the nature of the chemical bonds involved, and the structural changes that result in the amorphous phase. Clearly, further fundamental studies are needed to achieve complete understanding of such amorphous systems with variable disorder.