Effect of rinsing and drying on silicon surface cleaning for epitaxial growth

2002 ◽  
Vol 8 (5) ◽  
pp. 463-467 ◽  
Author(s):  
Hyoun Woo Kim ◽  
Kwang-sik Kim ◽  
Woon-suk Hwang ◽  
Rafael Reif
Keyword(s):  
Epitaxial Growth ◽  
Silicon Surface ◽  
Surface Cleaning

Silicon Surface Cleaning for Low Temperature Epitaxial Growth

1993 ◽  
Vol 315 ◽  
Author(s):  
John O. Borland ◽  
Carol Riggi ◽  
Faye Brocious
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Surface ◽  
Surface Cleaning

Silicon Surface Cleaning for Low Temperature Silicon Epitaxial Growth

1998 ◽  
Vol 65-66 ◽  
pp. 229-232 ◽  
Author(s):  
Masao Mayuzumi ◽  
M. Imai ◽  
S. Nakahara ◽  
Katsuya Inoue ◽  
J. Takahashi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Surface ◽  
Surface Cleaning

Low-Temperature Surface Cleaning of Si and Successive Plasma-Assisted Epitaxial Growth of GaAs

1987 ◽  
Vol 26 (Part 2, No. 10) ◽  
pp. L1576-L1578 ◽  
Author(s):  
Qing Zhu Gao ◽  
Takashi Hariu ◽  
Shoichi Ono
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Surface Cleaning ◽  
Temperature Surface

Control of Isotropic and Anisotropic Etching and Surface Cleaning of Silicon and Silicon Dioxide in a Hydrogen Plasma

1992 ◽  
Vol 282 ◽  
Author(s):  
S. Veprek ◽  
Ch. Wang ◽  
G. Ratz
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Silicon Surface ◽  
Etch Rate ◽  
Hydrogen Plasma ◽  
Oxygen Removal ◽  
Surface Cleaning ◽  
Optimum Conditions ◽  
Degree Of Anisotropy ◽  
Oxygen Impurities

ABSTRACTWe present data on the temperature dependence of the etch rate of silicon and silicon dioxide in order to elucidate optimum conditions for the selective oxygen removal from the silicon surface. Both, the etching temperature and ion bombardment have a pronounced influence on the surface morphology. The conditions yielding a minimum surface roughness will be presented. A careful control of the oxygen impurities of the hydrogen plasma in the range between about 1–3 ppm and 60 ppm allow us to control the degree of anisotropy of etching of patterned silicon wafers.

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