Micro-raman characterization of molecular-beam epitaxial ge heterolayers on Si substrates

1993 ◽  
Vol 22 (7) ◽  
pp. 779-784 ◽  
Author(s):  
M. Ichimura ◽  
Y. Moriguchi ◽  
A. Usami ◽  
T. Wada ◽  
A. Wakahara ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Raman Characterization

Molecular Beam Epitaxial Growth and Characterization of GaAs Films on Thin Si Substrates

1998 ◽  
Vol 37 (Part 1, No. 1) ◽  
pp. 39-44 ◽  
Author(s):  
Kenzo Maehashi ◽  
Hisao Nakashima ◽  
Frank Bertram ◽  
Peter Veit ◽  
Jürgen Christen
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Gaas Films ◽  
Molecular Beam Epitaxial Growth

Migration-Enhanced Molecular Beam Epitaxial Growth and Characterization of GaAs on Si Substrates

1988 ◽  
Vol 144 ◽  
Author(s):  
J.H. Kim ◽  
S. Sakai ◽  
J.K. Liu ◽  
G. Raohakrishnan ◽  
S.S. Chang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Light Emitting ◽  
Si Substrates ◽  
Molecular Beam Epitaxial

ABSTRACTWe first report on migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layers on Si substrates (GaAs/Si). Excellent surface morphology GaAs layers were successfully grown on (100) Sisubstrates misoriented 4 toward [110] direction. The MEMBE growth method isdescribed and material properties are compared with those of normal two-step MBE-grown or in-situ annealed layers. Micrographs of cross-sectional view transmission electron microscopy (TEM) and scanning surface electron microscopy (SEM) of MEMBE-grown GaAs/Si showed dislocation densities of 107 cm-2 over ten times lower than those of two-step MBE-grown or in-situ annealedlayers. AlGaAs/GaAs double heterostructure lasers and light-emitting diodeshave been successfully grown on MEMBE GaAs/Si by both metal organic chemical vapor deposition and liquid phase epitaxy. MOCVD-grown lasers showed peak output power as high as 184 mW/facet, pulsed threshold currents as low as150 mA at 300 K, and differential quantum efficiencies of up to 30 %. The LPE-grown light-emitting diodes showed output powers of 1.5 mW and external quantum efficiencies of 3.3 mW/A per facet.

Molecular beam epitaxial growth and characterization of Cd-based II–VI wide-bandgap compounds on Si substrates

2005 ◽  
Vol 34 (5) ◽  
pp. 655-661 ◽  
Author(s):  
G. Brill ◽  
Y. Chen ◽  
P. M. Amirtharaj ◽  
W. Sarney ◽  
D. Chandler-Horowitz ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Molecular Beam ◽  
Wide Bandgap ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Molecular Beam Epitaxial Growth

Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

1989 ◽  
Vol 18 (6) ◽  
pp. 757-761
Author(s):  
E. T. Croke ◽  
R. J. Hauenstein ◽  
C. W. Nieh ◽  
T. C. McGill
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial

Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (24) ◽  
pp. 2435-2437 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
John K. Liu ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates

Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

2016 ◽  
Vol 381 ◽  
pp. 32-35 ◽  
Author(s):  
Mitsuaki Yano ◽  
Kazuto Koike ◽  
Masayuki Matsuo ◽  
Takayuki Murayama ◽  
Yoshiyuki Harada ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Wo3 Thin Films

Raman characterization of molecular‐beam‐epitaxy‐grown GaAlSb on GaSb and GaAs substrates

1989 ◽  
Vol 65 (5) ◽  
pp. 1942-1946 ◽  
Author(s):  
Miles Haines ◽  
T. Kerr ◽  
S. Newstead ◽  
P. B. Kirby
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gaas Substrates ◽  
Raman Characterization
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