Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

2016 ◽  
Vol 381 ◽  
pp. 32-35 ◽  
Author(s):  
Mitsuaki Yano ◽  
Kazuto Koike ◽  
Masayuki Matsuo ◽  
Takayuki Murayama ◽  
Yoshiyuki Harada ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Wo3 Thin Films

Fabrication and Characterization of Electrically Functional Lanthanum Hexaboride Thin Films on Ultrasmooth Sapphire Substrates

2008 ◽  
Vol 1148 ◽  
Author(s):  
Yushi Kato ◽  
Yusaburo Ono ◽  
Yasuyuki Akita ◽  
Makoto Hosaka ◽  
Naoki Shiraishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam ◽  
Lattice Parameter ◽  
Lanthanum Hexaboride ◽  
Root Mean Square Roughness ◽  
Sapphire Substrates ◽  
Fabrication And Characterization ◽  
Laser Mbe ◽  
Atomically Flat

AbstractThe crystal growth of lanthanum hexaboride (LaB6) thin films was examined by applying the laser molecular beam epitaxy (laser MBE) process. C-axis (100) highly-oriented LaB6 thin films could be fabricated on ultrasmooth sapphire (α-Al2O3 single crystal) (0001) substrates with atomic steps of 0.2 nm in height and atomically flat terraces. The obtained film exhibited a smooth surface with root mean square roughness of 0.15 nm. The lattice parameter of the LaB6 thin film was close to the bulk value reported previously. In the case of deposition on commercial mirror-polished sapphire substrates, the grown film was amorphous. The resistivity of the prepared crystalline LaB6 thin films was as low as 2.2 × 10−4 Ω cm and almost constant in the temperature range of 10–300 K.

Molecular Beam Epitaxial Growth and Characterization of GaAs on Sapphire and Silicon-on-Sapphire Substrates

1988 ◽  
Vol 144 ◽  
Author(s):  
T. P. Humphreys ◽  
C. J. Miner ◽  
N. R. Parikh ◽  
K. Das ◽  
M. K. Summerville ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Optical Analysis ◽  
Molecular Beam Epitaxial ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Current Voltage ◽  
Semiconductor Contacts ◽  
Molecular Beam Epitaxial Growth

ABSTRACTEpitaxial GaAs layers have been grown by molecular beam epitaxy on (1012) sapphire and silicon-on-sapphire substrates. The grown layers were characterized by optical and transmission electron microscopy; Rutherford backscattering/channeling of 2.1 MeV He+ ions; Raman spectroscopy; Hall mobility measurements; photoluminescence spectroscopy and current-voltage measurements from metal-semiconductor contacts. The extensive microstructural, electrical and optical analysis of the GaAs layers indicates that the films deposited on silicon-on-sapphire are superior to those grown directly on (1012) sapphire substrates.

ELECTROCHROMIC CHARACTERIZATION OF ELECTRODEPOSITED WO3 THIN FILMS

2002 ◽  
Author(s):  
R. VIJAYALAKSHMI ◽  
M. JAYACHANDRAN ◽  
C. SANJEEVIRAJA
Keyword(s):  
Thin Films ◽  
Wo3 Thin Films

Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques

1989 ◽  
Vol 18 (6) ◽  
pp. 757-761
Author(s):  
E. T. Croke ◽  
R. J. Hauenstein ◽  
C. W. Nieh ◽  
T. C. McGill
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial
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