Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition

1991 ◽  
Vol 20 (7) ◽  
pp. 869-874 ◽  
Author(s):  
Y. C. Wang ◽  
R. F. Davis
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Surface Microstructure

Deposition of YSZ Thin Films by Liquid Fuel Combustion Chemical Vapor Deposition

2002 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Qiuming Wei ◽  
Jim Lua ◽  
Sergey Yamolenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Film Growth ◽  
Early Stage ◽  
Chemical Vapor ◽  
Nucleation Density

Thin film of YSZ electrolyte is highly desired to reduce the electrical resistance in SOFCs. YSZ thin Films have been successfully produced using liquid fuel combustion chemical vapor deposition (CCVD) technique. Nucleation of the YSZ particles were investigated based on two processing parameters, i.e., substrate temperature and total-metal-concentration in the liquid fuel. An optimum substrate temperature was found for highest the nucleation density. The nucleation density was increased with the total-metal-concentration. Microstructure evolution of the YSZ particles in the early stage in film growth was also studied. It was found that the particle growth rate was linear with processing time, and the particle orientation was varying with the time in the early stage of the film processing. To enhance the film growth rate, the effect of thermophoresis was studied. By increase the temperature gradient towards substrate, the effect of thermophoresis was enhanced and the film growth is also increased.

Comparison of Copper CVD Using Cu(FOD)2 and Cu(HFAC)2 Reduction

1999 ◽  
Vol 564 ◽  
Author(s):  
J. S. Boey ◽  
G. L. Griffin ◽  
A. W. Maverick ◽  
H. Fan
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Reaction Order ◽  
Cluster Formation ◽  
Chemical Vapor ◽  
Significant Cluster ◽  
Film Properties ◽  
Film Nucleation

AbstractWe have measured the growth rate and film properties for the chemical vapor deposition of copper thin films using H2 reduction of Cu(fod)2 [H(fod) = 6,6,7,7,8,8,8-heptafluoro-2,2- dimethyl-3,5-octanedione]. The results are directly compared to deposition using Cu(hfac)2 [H(hfac) = 1,1,1,5,5,5-hexafluoro-2,4-pentanedione]. Higher growth rates are obtained using Cu(fod)2, in part because of differences in reaction order between the two compounds. However, both compounds exhibit significant cluster formation during film nucleation, which leads to residual porosity and film resistivities above 2 µΩ-cm.

Preparation of Strontium Bismuth Tantalate Thin Film by Liquid-Delivery Metalorganic Chemical Vapor Deposition

2004 ◽  
Vol 830 ◽  
Author(s):  
M. Silinskas ◽  
M. Lisker ◽  
B. Kalkofen ◽  
S. Matichyn ◽  
B. Garke ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Bismuth Oxide ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Pressure ◽  
Metalorganic Chemical

ABSTRACTThin films of BiOX, SrXTaYO, and SrXBiYTaZO (SBT) were deposited by liquid-delivery metalorganic chemical vapor deposition (MOCVD). The substrate temperature and the deposition pressure were varied from 300 to 600°C and from 0.35 to 7 mbar, respectively. Triallylbismuth (Bi-1), triphenylbismuth (Bi-2) or alkyl bismuth (Bi-3) and strontium bis-pentaethoxy-methoxyethoxy tantalate (Sr-Ta) were used as Bi precursors and as Sr-Ta precursor, respectively. X-ray photoelectron spectroscopy (XPS), ellipsometry, and scanning electron microscopy (SEM) were carried out to characterize the film properties.The growth rates of the MOCVD of BiOX and SrXTaYO were compared to the growth rate of SBT to obtain information about mutual interaction between the precursors. The growth rate of bismuth oxide thin films deposited from Bi-1 and Bi-2 was low (∼10 nm/h at 0.35 mbar). The growth rate of strontium tantalate films was higher (up to 50 nm/h) and depended strongly on the temperature. Eight times higher (∼400 nm/h) growth rates of BiOX and SBT films were observed for the Bi-3 precursor. The deposition rate of the SBT films was quite similar to the rate of the bismuth oxide. However, the deposition rate of SBT was always lower than the deposition rate of the single Bi precursors. The growth rate significantly depended on the deposition pressure. A decrease of the deposition pressure in the reactor chamber reduced the deposition rate of BiOX, SrXTaYO, and SBT, but on the other hand, it improved the uniformity of the film thickness over the entire 150 mm wafer surface.The XPS measurements showed a deficit of bismuth in the SBT films even though the concentration of the Bi-1 or Bi-2 precursor was several times higher compared to the Sr-Ta precursor. This problem disappeared when Bi-3 source was used.

Laser Induced Chemical Vapor Deposition of GaN

1989 ◽  
Vol 158 ◽  
Author(s):  
A. Kobayashi ◽  
T. Asai ◽  
S. Kawai ◽  
P.J. Chong
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Laser Irradiation ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Technique ◽  
Adsorbed Species ◽  
Chemical Vapor Deposition Technique ◽  
Vapor Deposition Technique

ABSTRACTThin films of GaN were grown on the Al2O3 (0001) substrate by the laserinduced chemical vapor deposition technique. Morphology were different for the films grown with and without laser irradiation. Moreover, the density of nucleus and the growth rate in the case of the growth with the parallel irradiation were greater than those without irradiation. Differences were attributed to presence of photo-dissociated species in the case of the laser irradiation. Additional irradiation normal to the substrate decreased the rate, probably because of the accelerated desorption of the reactive adsorbed species.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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