Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature

1991 ◽  
Vol 20 (7) ◽  
pp. 833-837 ◽  
Author(s):  
C. A. Volkert ◽  
E. A. Fitzgerald ◽  
R. Hull ◽  
Y. H. Xie ◽  
Y. J. Mii
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films ◽  
Wafer Curvature

Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics

2010 ◽  
Vol 256 (10) ◽  
pp. 3299-3302 ◽  
Author(s):  
Bo-Ching He ◽  
Hua-Chiang Wen ◽  
Tun-Yuan Chinag ◽  
Zue-Chin Chang ◽  
Derming Lian ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films

Microstructure and strain relaxation of orthorhombic TmMnO3 epitaxial thin films

2012 ◽  
Vol 338 (1) ◽  
pp. 280-282 ◽  
Author(s):  
Y. Yu ◽  
X. Zhang ◽  
J.J. Yang ◽  
J.W. Wang ◽  
Y.G. Zhao
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films

Strain Relaxation in Si1-xGex Thin Films on Si (100) Substrates: Modeling and Comparisons with Experiments

2005 ◽  
Vol 875 ◽  
Author(s):  
Kedarnath Kolluri ◽  
Luis A. Zepeda-Ruiz ◽  
Cheruvu S. Murthy ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Mechanical Response ◽  
Epitaxial Film ◽  
Film Growth ◽  
Strain Relaxation ◽  
Mean Field ◽  
Substrate Thickness ◽  
Threading Dislocation ◽  
Epitaxial Thin Films ◽  
Dislocation Generation

AbstractStrained semiconductor thin films grown epitaxially on semiconductor substrates of different composition, such as Si1-xGex/Si, are becoming increasingly important in modern microelectronic technologies. In this paper, we report a hierarchical computational approach for analysis of dislocation formation, glide motion, multiplication, and annihilation in Si1-xGex epitaxial thin films on Si substrates. Specifically, a condition is developed for determining the critical film thickness with respect to misfit dislocation generation as a function of overall film composition, film compositional grading, and (compliant) substrate thickness. In addition, the kinetics of strain relaxation in the epitaxial film during growth or thermal annealing (including post-implantation annealing) is analyzed using a properly parameterized dislocation mean-field theoretical model, which describes plastic deformation dynamics due to threading dislocation propagation. The theoretical results for Si1-xGex epitaxial thin films grown on Si (100) substrates are compared with experimental measurements and are used to discuss film growth and thermal processing protocols toward optimizing the mechanical response of the epitaxial film.

Microstructure and strain relaxation in YBa2Cu3O7 epitaxial thin films

1998 ◽  
Vol 319 (1-2) ◽  
pp. 211-214 ◽  
Author(s):  
J.-L Maurice ◽  
O Durand ◽  
M Drouet ◽  
J.-P Contour
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films

Anisotropic strain relaxation in (Ba0.6Sr0.4)TiO3 epitaxial thin films

2005 ◽  
Vol 97 (10) ◽  
pp. 103530 ◽  
Author(s):  
W. K. Simon ◽  
E. K. Akdogan ◽  
A. Safari
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films ◽  
Anisotropic Strain

scholarly journals Giant flexoelectric effect through interfacial strain relaxation

2012 ◽  
Vol 370 (1977) ◽  
pp. 4944-4957 ◽  
Author(s):  
Daesu Lee ◽  
Tae Won Noh
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Ferroelectric Properties ◽  
Epitaxial Thin Films ◽  
Epitaxial Thin Film ◽  
Strain Gradients ◽  
Bulk Solids ◽  
Flexoelectric Effect ◽  
Potential Applications ◽  
Interfacial Strain

Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MV m −1 by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.

Ion Implantation and Misfit Dislocation Formation in P/P+Silicon

1999 ◽  
Vol 594 ◽  
Author(s):  
Petra Feichtinger ◽  
Hiroaki Fukuto ◽  
Rajinder Sandhu ◽  
Benjamin Poust ◽  
Mark S. Goorsky
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Ion Implantation ◽  
Misfit Dislocation ◽  
Low Dose ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Epitaxial Thin Films ◽  
Boron Doped ◽  
Temperature Rapid Thermal Annealing

AbstractWe determined that self implantation of pseudomorphically strained silicon epitaxial layers greatly attenuates strain relaxation. We employed highly boron doped 150 mm diameter silicon with a nominally un-doped, 2.5 μm thick epitaxial layer (p/p+). The compressively strained layer (mismatch ≈ 1.5 × 10−4) showed inhomogeneous relaxation after epitaxial growth, with misfits forming only near the wafer periphery. High temperature rapid thermal annealing was employed after ion implantation to study misfit dislocation nucleation and glide. Our results suggest that low dose ion implantation has a potential to reduce misfit dislocation propagation and nucleation in epitaxial thin films.

Tetragonal-tetragonal-monoclinic-rhombohedral transition: Strain relaxation of heavily compressed BiFeO3 epitaxial thin films

2014 ◽  
Vol 104 (5) ◽  
pp. 052908 ◽  
Author(s):  
Z. Fu ◽  
Z. G. Yin ◽  
N. F. Chen ◽  
X. W. Zhang ◽  
Y. J. Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films ◽  
Transition Strain
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