Ion Implantation and Misfit Dislocation Formation in P/P+Silicon

1999 ◽  
Vol 594 ◽  
Author(s):  
Petra Feichtinger ◽  
Hiroaki Fukuto ◽  
Rajinder Sandhu ◽  
Benjamin Poust ◽  
Mark S. Goorsky
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Ion Implantation ◽  
Misfit Dislocation ◽  
Low Dose ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Epitaxial Thin Films ◽  
Boron Doped ◽  
Temperature Rapid Thermal Annealing

AbstractWe determined that self implantation of pseudomorphically strained silicon epitaxial layers greatly attenuates strain relaxation. We employed highly boron doped 150 mm diameter silicon with a nominally un-doped, 2.5 μm thick epitaxial layer (p/p+). The compressively strained layer (mismatch ≈ 1.5 × 10−4) showed inhomogeneous relaxation after epitaxial growth, with misfits forming only near the wafer periphery. High temperature rapid thermal annealing was employed after ion implantation to study misfit dislocation nucleation and glide. Our results suggest that low dose ion implantation has a potential to reduce misfit dislocation propagation and nucleation in epitaxial thin films.

The High Temperature Stability and Relaxation of UHV/CVD SiGe Thin Films

1992 ◽  
Vol 280 ◽  
Author(s):  
S. R. Stiffler ◽  
C. L. Stanis ◽  
M. S. Goorsky ◽  
K. K. Chan
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Misfit Dislocation ◽  
Stability Criterion ◽  
Temperature Stability ◽  
Dislocation Nucleation ◽  
Misfit Dislocations ◽  
High Temperature Stability ◽  
Nucleation Barrier ◽  
The Stability

ABSTRACT:: High temperature (950°C) annealing is used to stimulate relaxation in UHV/CVD SiGe thin films. It is found that the films are stable to thicknesses which exceed the stability criterion of Matthews and Blakeslee [1] by a small amount. In unstable films, the misfit dislocation density increases with annealing time, reaching a maximum value. For films which exceed the empirical stability criterion by a relatively small amount, the misfit dislocations relax the film to a strain given by the film thickness and the empirical stability criterion. However, large remnant strains are observed when the relaxation process introduces relatively high dislocation densities (≳5 misfits/micron). Associated with large remnant strains are a marked propensity for dislocation banding and looping deep into the substrate with extended annealing. These results are discussed with respect to the magnitude of the misfit dislocation nucleation barrier and the energy associated with interactions among misfit dislocations.

Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics

2010 ◽  
Vol 256 (10) ◽  
pp. 3299-3302 ◽  
Author(s):  
Bo-Ching He ◽  
Hua-Chiang Wen ◽  
Tun-Yuan Chinag ◽  
Zue-Chin Chang ◽  
Derming Lian ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films

Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature

1991 ◽  
Vol 20 (7) ◽  
pp. 833-837 ◽  
Author(s):  
C. A. Volkert ◽  
E. A. Fitzgerald ◽  
R. Hull ◽  
Y. H. Xie ◽  
Y. J. Mii
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films ◽  
Wafer Curvature

Microstructure and strain relaxation of orthorhombic TmMnO3 epitaxial thin films

2012 ◽  
Vol 338 (1) ◽  
pp. 280-282 ◽  
Author(s):  
Y. Yu ◽  
X. Zhang ◽  
J.J. Yang ◽  
J.W. Wang ◽  
Y.G. Zhao
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films

Strain Relaxation in Si1-xGex Thin Films on Si (100) Substrates: Modeling and Comparisons with Experiments

2005 ◽  
Vol 875 ◽  
Author(s):  
Kedarnath Kolluri ◽  
Luis A. Zepeda-Ruiz ◽  
Cheruvu S. Murthy ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Mechanical Response ◽  
Epitaxial Film ◽  
Film Growth ◽  
Strain Relaxation ◽  
Mean Field ◽  
Substrate Thickness ◽  
Threading Dislocation ◽  
Epitaxial Thin Films ◽  
Dislocation Generation

AbstractStrained semiconductor thin films grown epitaxially on semiconductor substrates of different composition, such as Si1-xGex/Si, are becoming increasingly important in modern microelectronic technologies. In this paper, we report a hierarchical computational approach for analysis of dislocation formation, glide motion, multiplication, and annihilation in Si1-xGex epitaxial thin films on Si substrates. Specifically, a condition is developed for determining the critical film thickness with respect to misfit dislocation generation as a function of overall film composition, film compositional grading, and (compliant) substrate thickness. In addition, the kinetics of strain relaxation in the epitaxial film during growth or thermal annealing (including post-implantation annealing) is analyzed using a properly parameterized dislocation mean-field theoretical model, which describes plastic deformation dynamics due to threading dislocation propagation. The theoretical results for Si1-xGex epitaxial thin films grown on Si (100) substrates are compared with experimental measurements and are used to discuss film growth and thermal processing protocols toward optimizing the mechanical response of the epitaxial film.

Pulsed Laser Deposition of CdTe, HgCdTe, and β-SiC Thin Films on Silicon

1992 ◽  
Vol 268 ◽  
Author(s):  
D.B. Fenner ◽  
O. Li ◽  
P.W. Morrison ◽  
J. Cosgrove ◽  
L. Lynds ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Narrow Band ◽  
High Temperature Superconductors ◽  
Pulsed Laser ◽  
Wide Band ◽  
Compound Semiconductor ◽  
Laser Deposition ◽  
Epitaxial Thin Films

ABSTRACTThe successful methods for laser ablation and deposition of epitaxial thin films of metal oxides, especially the high-temperature superconductors (HTSC), have been adapted to pulsed laser deposition (PLD) of the narrow-band compound semiconductor HgCdTe, and the wide-band semiconductor β-SiC. Useful film quality is readily obtained in both cases: the HgCdTe films on CdTe wafers function in IR photodetection and the 3-SiC is epitaxial on both Si (100) and (111) wafers.

Self-propagating high-temperature synthesis in Pt/Co/MgO(001) epitaxial thin films

2000 ◽  
Vol 42 (5) ◽  
pp. 968-972 ◽  
Author(s):  
V. G. Myagkov ◽  
L. A. Li ◽  
L. E. Bykova ◽  
I. A. Turpanov ◽  
P. D. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Epitaxial Thin Films ◽  
Temperature Synthesis ◽  
High Temperature Synthesis

Microstructure and strain relaxation in YBa2Cu3O7 epitaxial thin films

1998 ◽  
Vol 319 (1-2) ◽  
pp. 211-214 ◽  
Author(s):  
J.-L Maurice ◽  
O Durand ◽  
M Drouet ◽  
J.-P Contour
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films
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