Misfit strain relaxation in (Ba0.60Sr0.40)TiO3 epitaxial thin films on orthorhombic NdGaO3 substrates

2006 ◽  
Vol 89 (2) ◽  
pp. 022902 ◽  
Author(s):  
W. K. Simon ◽  
E. K. Akdogan ◽  
A. Safari
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Misfit Strain ◽  
Epitaxial Thin Films

Misfit Strain Relaxation by Secondary Phase Formation in Multiferroic BiFeO3 Epitaxial Thin Films

2009 ◽  
Vol 1199 ◽  
Author(s):  
Xue Wang ◽  
Yinlian Zhu ◽  
Xiuliang Ma ◽  
Can Wang ◽  
Huibin Lu
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Compositional Analysis ◽  
Secondary Phase ◽  
Misfit Strain ◽  
Dark Field ◽  
Misfit Dislocations ◽  
Epitaxial Thin Films ◽  
Annular Dark Field ◽  
Parasitic Phase

AbstractMicrostructures of BiFeO3 (BFO) thin films epitaxially grown on SrRuO3 (SRO) buffered SrTiO3 (STO) (001) substrates by laser molecular beam epitaxy were investigated by means of transmission electron microscopy (TEM). The results showed that the films grown under the oxygen pressures of 1Pa and 0.3Pa, respectively, contain parasitic phase embedded in the BFO phase. The parasitic phase was revealed to be poor in Bi and rich in Fe by high-angle annular dark-field (HAADF) imaging and energy dispersive X-ray spectroscopy (EDS) compositional analysis. In combination with selected area electron diffraction patterns, the parasitic phase was determined to be α-Fe2O3. By lowering oxygen pressure, the density and the size of α-Fe2O3 phase increases whereas the regularity decreases. High resolution TEM images showed that approximately periodic misfit dislocations exist at the interface between the α-Fe2O3 phase and the BFO matrix, indicating that the α-Fe2O3 particles are semi-coherently embedded in the BFO films. Less misfit dislocations were detected at the interfaces between the BFO films and the SRO/STO substrates, implying that the misfit strains in the films may be fully relaxed by the formation of α-Fe2O3 phase.

Domain evolution of tetragonal Pb(ZrxTi1−x) O3 piezoelectric thin films on SrTiO3 (100) surfaces: combined effects of misfit strain and Zr/Ti ratio

2014 ◽  
Vol 2 (29) ◽  
pp. 5836-5841 ◽  
Author(s):  
Qi Yu ◽  
Jing-Feng Li ◽  
Fang-Yuan Zhu ◽  
Jiangyu Li
Keyword(s):  
Thin Films ◽  
Misfit Strain ◽  
Epitaxial Thin Films ◽  
Combined Effects ◽  
Piezoelectric Thin Films ◽  
Domain Evolution ◽  
Ferroelectric Domains ◽  
Substrate Constraint

The ferroelectric domains of tetragonal Pb(ZrxTi1−x)O3 epitaxial thin films have been studied comprehensively to reveal their piezoelectric responses under substrate constraint.

Effect of strain relaxation of oxidation-treated SiGe epitaxial thin films and its nanomechanical characteristics

2010 ◽  
Vol 256 (10) ◽  
pp. 3299-3302 ◽  
Author(s):  
Bo-Ching He ◽  
Hua-Chiang Wen ◽  
Tun-Yuan Chinag ◽  
Zue-Chin Chang ◽  
Derming Lian ◽  
...  
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films

Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature

1991 ◽  
Vol 20 (7) ◽  
pp. 833-837 ◽  
Author(s):  
C. A. Volkert ◽  
E. A. Fitzgerald ◽  
R. Hull ◽  
Y. H. Xie ◽  
Y. J. Mii
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films ◽  
Wafer Curvature

Mechanisms of misfit strain relaxation in epitaxially grown BLT (Bi4-xLaxTi3O12, x = 0.75) thin films

2003 ◽  
Vol 779 ◽  
Author(s):  
Hyung Seok Kim ◽  
Sang Ho Oh ◽  
Ju Hyung Suh ◽  
Chan Gyung Park
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Strain Relaxation ◽  
Lattice Misfit ◽  
Misfit Strain ◽  
Misfit Dislocations ◽  
Transmission Electron ◽  
Means Of Transmission ◽  
20 Nm

AbstractMechanisms of misfit strain relaxation in epitaxially grown Bi4-xLaxTi3O12 (BLT) thin films deposited on SrTiO3 (STO) and LaAlO3 (LAO) substrates have been investigated by means of transmission electron microscopy (TEM). The misfit strain of 20 nm thick BLT films grown on STO substrate was relaxed by forming misfit dislocations at the interface. However, cracks were observed in 100 nm thick BLT films grown on the same STO. It was confirmed that cracks were formed because of high misfit strain accumulated with increasing the thickness of BLT, that was not sufficiently relaxed by misfit dislocations. In the case of the BLT film grown on LAO substrate, the magnitude of lattice misfit between BLT and LAO was very small (~1/10) in comparison with the case of the BLT grown on STO. The relatively small misfit strain formed in layered structure of the BLT films on LAO, therefore, was easily relaxed by distorting the film, rather than forming misfit dislocations or cracks, resulting in misorientation regions in the BLT film.

Microstructure and strain relaxation of orthorhombic TmMnO3 epitaxial thin films

2012 ◽  
Vol 338 (1) ◽  
pp. 280-282 ◽  
Author(s):  
Y. Yu ◽  
X. Zhang ◽  
J.J. Yang ◽  
J.W. Wang ◽  
Y.G. Zhao
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films

Strain Relaxation in Si1-xGex Thin Films on Si (100) Substrates: Modeling and Comparisons with Experiments

2005 ◽  
Vol 875 ◽  
Author(s):  
Kedarnath Kolluri ◽  
Luis A. Zepeda-Ruiz ◽  
Cheruvu S. Murthy ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Mechanical Response ◽  
Epitaxial Film ◽  
Film Growth ◽  
Strain Relaxation ◽  
Mean Field ◽  
Substrate Thickness ◽  
Threading Dislocation ◽  
Epitaxial Thin Films ◽  
Dislocation Generation

AbstractStrained semiconductor thin films grown epitaxially on semiconductor substrates of different composition, such as Si1-xGex/Si, are becoming increasingly important in modern microelectronic technologies. In this paper, we report a hierarchical computational approach for analysis of dislocation formation, glide motion, multiplication, and annihilation in Si1-xGex epitaxial thin films on Si substrates. Specifically, a condition is developed for determining the critical film thickness with respect to misfit dislocation generation as a function of overall film composition, film compositional grading, and (compliant) substrate thickness. In addition, the kinetics of strain relaxation in the epitaxial film during growth or thermal annealing (including post-implantation annealing) is analyzed using a properly parameterized dislocation mean-field theoretical model, which describes plastic deformation dynamics due to threading dislocation propagation. The theoretical results for Si1-xGex epitaxial thin films grown on Si (100) substrates are compared with experimental measurements and are used to discuss film growth and thermal processing protocols toward optimizing the mechanical response of the epitaxial film.

Microstructure and strain relaxation in YBa2Cu3O7 epitaxial thin films

1998 ◽  
Vol 319 (1-2) ◽  
pp. 211-214 ◽  
Author(s):  
J.-L Maurice ◽  
O Durand ◽  
M Drouet ◽  
J.-P Contour
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Epitaxial Thin Films

Crossover between Mott and Efros-Shklovskii variable-range hopping in Sr2IrO4 epitaxial thin films by misfit strain and isovalent doping

2019 ◽  
Vol 126 (18) ◽  
pp. 185101 ◽  
Author(s):  
M. Souri ◽  
J. G. Connell ◽  
J. Nichols ◽  
J. Terzic ◽  
G. Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Misfit Strain ◽  
Epitaxial Thin Films ◽  
Variable Range Hopping ◽  
Variable Range ◽  
Isovalent Doping
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