C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

1989 ◽  
Vol 18 (3) ◽  
pp. 385-389 ◽  
Author(s):  
F. T. Brady ◽  
S. S. Li ◽  
W. A. Krull
Keyword(s):  
High Dose ◽  
Oxide Layers ◽  
Oxygen Implantation ◽  
Buried Oxide

Buried Oxide Layers Formed by Oxygen Implantation for Potential Use in Dielectrically Isolated ICs

1981 ◽  
pp. 228-231
Author(s):  
K. V. Anand ◽  
P. Pang ◽  
J. B. Butcher ◽  
K. Das ◽  
E. Franks ◽  
...  
Keyword(s):  
Oxide Layers ◽  
Oxygen Implantation ◽  
Buried Oxide ◽  
Potential Use

Optical and compositional studies of buried oxide layers in silicon formed by high dose implantation

1987 ◽  
Vol 30 (1-4) ◽  
pp. 390-396 ◽  
Author(s):  
R.J. Chater ◽  
J.A. Kilner ◽  
E. Scheid ◽  
S. Cristoloveneau ◽  
P.L.F. Hemment ◽  
...  
Keyword(s):  
High Dose ◽  
Oxide Layers ◽  
Buried Oxide ◽  
High Dose Implantation

Silicon-on-insulator structures using high dose oxygen implantation to form buried oxide films

1983 ◽  
Vol 14 (6) ◽  
pp. 88-107 ◽  
Author(s):  
K. Das ◽  
G. Shorthouse ◽  
J. Butcher ◽  
K.V. Anand
Keyword(s):  
Oxide Films ◽  
Silicon On Insulator ◽  
High Dose ◽  
Oxygen Implantation ◽  
Buried Oxide
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