Formation of buried oxide layers by high dose implantation of oxygen ions in silicon

1984 ◽  
Vol 13 (4) ◽  
pp. 635-654 ◽  
Author(s):  
K. Das ◽  
J. B. Butcher ◽  
K. V. Anand
Keyword(s):  
High Dose ◽  
Oxide Layers ◽  
Oxygen Ions ◽  
Buried Oxide ◽  
High Dose Implantation

Optical and compositional studies of buried oxide layers in silicon formed by high dose implantation

1987 ◽  
Vol 30 (1-4) ◽  
pp. 390-396 ◽  
Author(s):  
R.J. Chater ◽  
J.A. Kilner ◽  
E. Scheid ◽  
S. Cristoloveneau ◽  
P.L.F. Hemment ◽  
...  
Keyword(s):  
High Dose ◽  
Oxide Layers ◽  
Buried Oxide ◽  
High Dose Implantation

Silicon on Insulator by High Dose Implantation

1984 ◽  
Vol 33 ◽  
Author(s):  
P. L. F. Hemment
Keyword(s):  
Physical Properties ◽  
Thermal Processing ◽  
Vlsi Circuits ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Current ◽  
Processing Technologies ◽  
Oxygen Ions ◽  
High Doses ◽  
High Dose Implantation

ABSTRACTSilicon on insulator structures consisting of a buried dielectric, formed by the implantation of high doses of oxygen ions, have been shown to be suitable substrates for LSI circuits. The substrates are compatible with present silicon processing technologies and are confidently expected to be suitable for VLSI circuits. In this paper the microstructure and physical properties of this SOI material will be described and the dependence of these characteristics upon the implantation conditions and subsequent thermal processing will be discussed. With this information, it is then possible to outline the specification for a high current oxygen implanter.

Formation of Buried Sio2 By High Dose Implantation of Oxygen at Room and Liquid Nitroeen Temperatures

1985 ◽  
Vol 53 ◽  
Author(s):  
F. Namavar ◽  
J. I. Budnick ◽  
F. H. Sanchez ◽  
H. C. Hayden
Keyword(s):  
Liquid Nitrogen ◽  
Current Density ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
High Dose ◽  
Crystalline Quartz ◽  
Oxygen Ions ◽  
High Dose Implantation ◽  
A Current

ABSTRACTWe have carried out a study to understand the mechanisms involved in the formation of buried SIO2 by high dose implantation of oxygen into Si targets. Oxygen ions were implanted at 150 keV with doses up to 2.5 X 1018 ions/cm2 and a current density of less than 10 μA/cm2 into Si 〈100〉 at room and liquid nitrogen temperatures. In-situ Rutherford backscattering (RBS) analysis clearly indicates the formation of uniform buried SIO2 for both room and liquid nitrogen temperatures for doses above 1.5 X 1018/cm2.Oxygen ions were implanted at room temperature into crystalline quartz to doses of about 1018 ions cm2 at 150 keV, with a current density of 〈10〉10 μA/cm2. The RBS spectra of the oxygen implanted quartz cannot be distinguished from those of unimplanted ones. Furthermore, Si ions were implanted into crystalline quartz at 80 keV and dose of 1 X 1017 Si/cm2, and a current aensity of about 1 μA/cm2. However, no signal from Si in excess of the SiO2 ratio could be observed. Our results obtained by RBS show that implantation of either Si+ or O into SiO2 under conditions stated above does not create a layer whose Si:O ratio differs measurably from that of SiO2.

C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

1989 ◽  
Vol 18 (3) ◽  
pp. 385-389 ◽  
Author(s):  
F. T. Brady ◽  
S. S. Li ◽  
W. A. Krull
Keyword(s):  
High Dose ◽  
Oxide Layers ◽  
Oxygen Implantation ◽  
Buried Oxide

Evolution of Buried Oxide “Pipe” Defects Upon Implantation Through Particles in Simox Material

1991 ◽  
Vol 235 ◽  
Author(s):  
M. K. El-Ghor ◽  
K. A. Joyner ◽  
H. H. Hosack
Keyword(s):  
Oxide Layer ◽  
High Energy ◽  
Silicon Wafers ◽  
High Dose ◽  
Buried Oxide ◽  
Oxide Particles ◽  
High Dose Implantation

ABSTRACTWe have investigated the effect of the presence of oxide particles on the surface of silicon wafers during high energy, high dose implantation of oxygen into silicon. It was found that for single implants with doses of 1.5 × 1018/cm2 or 1.8 × 1018/cm2, such particles produce a non-continuous buried oxide layer in the as-implanted condition as well as after annealing. Etching results showed that no defects, which formed etchable paths through the buried oxide, were produced for particles with diameters 0.43 um or below for the lower dose and 0.53 um for the higher dose.

Buried oxide formation in Si by high-dose implantation of oxygen

1987 ◽  
Vol 30 (1-4) ◽  
pp. 383-389 ◽  
Author(s):  
A.H. van Ommen ◽  
M.P.A. Viegers
Keyword(s):  
High Dose ◽  
Oxide Formation ◽  
Buried Oxide ◽  
High Dose Implantation

SIMS, SAM and RBS Study of High Dose Oxygen Implantation into Silicon

1985 ◽  
Vol 48 ◽  
Author(s):  
W. M. Lau ◽  
P. Ratnam ◽  
C. A. T. Salama
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
Analytical Techniques ◽  
High Dose ◽  
Oxygen Distribution ◽  
Oxide Structure ◽  
Buried Oxide ◽  
Auger Microscopy ◽  
Secondary Ion ◽  
High Dose Implantation

ABSTRACTSecondary Ion Mass Spectrometry, Scanning Auger Microscopy, and Rutherford Backscattering Spectroscopy have been used to study a buried oxide structure on silicon formed by high dose implantation. All these surface analytical techniques give useful information about the oxygen distribution in the buried oxide structure. The difficulties in these techniques have also been assessed.

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