Determination of the fixed oxide charge and interface trap densities for buried oxide layers formed by oxygen implantation

1988 ◽  
Vol 52 (11) ◽  
pp. 886-888 ◽  
Author(s):  
F. T. Brady ◽  
S. S. Li ◽  
D. E. Burk ◽  
W. A. Krull
Keyword(s):  
Interface Trap ◽  
Oxide Charge ◽  
Oxide Layers ◽  
Oxygen Implantation ◽  
Buried Oxide

Buried Oxide Layers Formed by Oxygen Implantation for Potential Use in Dielectrically Isolated ICs

1981 ◽  
pp. 228-231
Author(s):  
K. V. Anand ◽  
P. Pang ◽  
J. B. Butcher ◽  
K. Das ◽  
E. Franks ◽  
...  
Keyword(s):  
Oxide Layers ◽  
Oxygen Implantation ◽  
Buried Oxide ◽  
Potential Use

C-V and C-t analysis of buried oxide layers formed by high-dose oxygen implantation

1989 ◽  
Vol 18 (3) ◽  
pp. 385-389 ◽  
Author(s):  
F. T. Brady ◽  
S. S. Li ◽  
W. A. Krull
Keyword(s):  
High Dose ◽  
Oxide Layers ◽  
Oxygen Implantation ◽  
Buried Oxide

ChemInform Abstract: Growth of Buried Oxide Layers of Silicon-on-Insulator (SOI) Structures by Thermal Oxidation of the Top Silicon Layer.

ChemInform ◽  
2010 ◽  
Vol 28 (43) ◽  
pp. no-no
Author(s):  
E. SCHROER ◽  
S. HOPFE ◽  
Q. Y. TONG ◽  
U. GOESELE ◽  
W. SKORUPA
Keyword(s):  
Thermal Oxidation ◽  
Silicon Layer ◽  
Silicon On Insulator ◽  
Oxide Layers ◽  
Buried Oxide
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