The effect of annealing temperature on the carrier concentration OF Hg0.6Cd0.4Te

1978 ◽  
Vol 7 (1) ◽  
pp. 65-81 ◽  
Author(s):  
J. L. Schmit ◽  
E. L. Stelzer
Keyword(s):  
Carrier Concentration ◽  
Annealing Temperature

scholarly journals Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

2019 ◽  
Vol 14 (1) ◽  
pp. 53-63 ◽  
Author(s):  
M. S. Bashar ◽  
Rummana Matin ◽  
Munira Sultana ◽  
Ayesha Siddika ◽  
M. Rahaman ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Concentration ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Localized States ◽  
Stoichiometric Ratio ◽  
Deposited Films

AbstractThe ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24–3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

scholarly journals Suppression of Oxygen Vacancy Defects in sALD-ZnO Films Annealed in Different Conditions

Materials ◽  
2020 ◽  
Vol 13 (18) ◽  
pp. 3910
Author(s):  
Ming-Jie Zhao ◽  
Zhi-Tao Sun ◽  
Zhi-Xuan Zhang ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Carrier Concentration ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Films ◽  
High Deposition Rate ◽  
Xps Spectra ◽  
Vacancy Defects ◽  
X Ray

Zinc oxide (ZnO) has drawn much attention due to its excellent optical and electrical properties. In this study, ZnO film was prepared by a high-deposition-rate spatial atomic layer deposition (ALD) and subjected to a post-annealing process to suppress the intrinsic defects and improve the crystallinity and film properties. The results show that the film thickness increases with annealing temperature owing to the increment of oxide layer caused by the suppression of oxygen vacancy defects as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) spectra. The film transmittance is seldom influenced by annealing. The refractive index increases with annealing temperature at 300–700 °C, possibly due to higher density and crystallinity of the film. The band gap decreases after annealing, which should be ascribed to the decrease in carrier concentration according to Burstein–Moss model. The carrier concentration decreases with increasing annealing temperature at 300–700 °C since the oxygen vacancy defects are suppressed, then it increases at 800 °C possibly due to the out-diffusion of oxygen atoms from the film. Meanwhile, the carrier mobility increases with temperature due to higher crystallinity and larger crystallite size. The film resistivity increases at 300–700 °C then decreases at 800 °C, which should be ascribed primarily to the variation of carrier concentration.

Structural and Electrical Properties of Poly-3C-SiC Layer Obtained from P Ion Implanted 4H-SiC

2009 ◽  
Vol 615-617 ◽  
pp. 485-488 ◽  
Author(s):  
Masataka Satoh ◽  
Takeshi Jinushi ◽  
Tohru Nakamura
Keyword(s):  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Amorphous Layer ◽  
Doping Profile ◽  
Structural And Electrical Properties ◽  
Defective Region ◽  
Small Change ◽  
Ion Implanted

We investigate the structural and electrical properties of polycrystalline 3C-SiC obtained from P ion implanted 4H-SiC with the box-shaped doping profile (NP: 6 x 1020/cm3, thickness: 400 nm, ion dose: 1.6 x 1016/cm2, room temperature). RBS measurement reveals that the highly defective region is formed by P ion implantation, which remains even after annealing at 1700 oC. X-TEM observation shows the P ion induced amorphous layer is recrystallized to twinned-3C-SiC. After annealing at 1300 oC, a sheet resistance of 950 /sq. and sheet carrier concentration of 1 x 1015/cm2 was obtained. By increasing the annealing temperature from 1500 to 1700 oC, the sheet resistance was drastically decreased to about 200 /sq., while there was a small change in the sheet carrier concentration. For the sample annealed at 1700 oC, the electrical activity of the P impurity was estimated to be about 10 % which is comparable to the case of hot implanted sample.

Preparation of N-Type Cuprous Oxide Films via Electrodeposition Method and their Photoelectrochemical Activities

2016 ◽  
Vol 848 ◽  
pp. 519-524
Author(s):  
Yuan Wen ◽  
Yuan Zhuang Zou ◽  
Si Yi Wen ◽  
Fei Hu
Keyword(s):  
Carrier Concentration ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Bath Temperature ◽  
Photocurrent Density ◽  
X Ray Diffraction ◽  
Photoelectrochemical Activity ◽  
X Ray ◽  
Electrochemical Deposition Method ◽  
Electrolyte Ph

The n-type Cu2O films were deposited on ITO substrate by three-electrode electrochemical deposition method in a CuSO4-lactic acid electrolyte. The effects of electrolyte pH, bath temperature, and annealing treatment on films’ conductivity and their photoelectrochemical activity were investigated by X-ray diffraction (XRD), photocurrent (I-t) and mott-schottky (M-S) plots. The results show that the n-type Cu2O could be electrodeposited at electrolyte pH of 8.5, 9 and 10, and the electrolyte temperature did not change the films’ conductivity. The highest n-type photocurrent density of 0.014 mA /cm2 and carrier concentration of 2.3×1019 cm-3 was obtained when the electrolyte pH was 8.5 and the bath temperature was 60°C. With increasing annealing temperature from 150°C to 400°C, the photocurrent density and carrier concentration of n-type Cu2O thin films correspondingly increased, indicating that heat treatment is helpful to improve the photoelectrochemical activity.

The Kinetics of Damage Removal Metastable Carrier Concentration Relaxation and Secondary Defect Evolution During RTA

1988 ◽  
Vol 100 ◽  
Author(s):  
Xu Ii ◽  
Tsien Peihsin ◽  
Li Zhljan
Keyword(s):  
Critical Temperature ◽  
Carrier Concentration ◽  
Annealing Temperature ◽  
Activation Energies ◽  
Time Duration ◽  
Defect Evolution ◽  
Secondary Defect ◽  
Kinetics Of

ABSTRACTThe kinetics of damage removal, metastable carrier concentration relaxation and secondary defect evolution in As+-implanted and rapidly annealed silicon was studied m detail. It was found that these processes are characterized by different activation energies. There is a critical temperature Tc for RTA. Only when the annealing temperature is higher than Tc, with suitable time duration can the RTA advantages be fully exloited.

Effect of Annealing Temperature on Electrical Properties of ZnTe Layers Grown by Thermal Evaporation

2012 ◽  
Vol 608-609 ◽  
pp. 1314-1317 ◽  
Author(s):  
Cheng Hsing Hsu ◽  
Ching Fang Tseng ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
Chun Hung Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Electrical Properties ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Annealing Temperature ◽  
Light Emitting Diodes ◽  
Thermal Evaporation ◽  
Light Emitting ◽  
Znte Thin Films

The electrical properties of evaporated ZnTe films were investigated with emphasis on the effects of an annealing temperature from 600oC to 800oC by RTA technique. Crystallinity, carrier concentration, sheet resistance, and mobility are shown to be dependent on the annealing temperature. The highest carrier concentration and lowest sheet resistance are 7.9×1015cm-3and 9300 Ω/□ at an annealing temperature of 700oC, respectively. The mobility was found to vary from 20 to 50 cm2V-1S-1. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes

High Efficiency Activation of Phosphorus Atoms in 4H-SiC by Atmospheric Pressure Thermal Plasma Jet Annealing

2016 ◽  
Vol 858 ◽  
pp. 535-539 ◽  
Author(s):  
Hiroaki Hanafusa ◽  
Keisuke Maruyama ◽  
Ryosuke Ishimaru ◽  
Seiichiro Higashi
Keyword(s):  
Carrier Concentration ◽  
Thermal Plasma ◽  
Atmospheric Pressure ◽  
Annealing Temperature ◽  
High Efficiency ◽  
Plasma Jet ◽  
Dopant Activation ◽  
Thermal Plasma Jet ◽  
Activation Annealing ◽  
Short Time

In this study, the application of atmospheric pressure thermal plasma jet (TPJ) annealing for impurity activation in 4H–SiC is reported. The activation of phosphorus atoms implanted at 300°C in 4H–SiC by TPJ irradiation and analysis of its crystallinity are investigated. At the maximum annealing temperature of 1630°C, the minimum resistivity value is 3.1 mΩ·cm and the maximum carrier concentration value is 2.0 × 1020 cm−3. Orientation analysis suggests that the sample implanted at 300°C was recrystallized to a 4H–SiC(0001) structure after 1630°C annealing. Furthermore, a significant increase in the carrier concentration was observed with the increasing cooling rate during the activation annealing process. Rapid cooling may suppress the impurity deactivation. These results suggest that short-time high-temperature TPJ irradiation annealing is effective for P dopant activation in 4H–SiC.

scholarly journals Effect of Annealing Temperature on The Some Electrical Properties of InSb:Bi Thin Films

2010 ◽  
Vol 7 (4) ◽  
pp. 1416-1420
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Electrical Properties ◽  
Thermoelectric Power ◽  
Carrier Concentration ◽  
Glass Substrate ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique

InSb alloy was prepared then InSb:Bi films have been prepared successfully by thermal evaporation technique on glass substrate at Ts=423K. The variation of activation energies(Ea1,Ea2)of d.c conductivity with annealing temperature (303, 373, 423, 473, 523 and 573)K were measured, it is found that its values increases with increasing annealing temperature. To show the type of the films, the Hall and thermoelectric power were measured. The activation energy of the thermoelectric power is much smaller than for d.c conductivity and increases with increasing annealing temperature .The mobility and carrier concentration has been measured also.

scholarly journals Influence of the Curing and Annealing Temperatures on the Properties of Solution Processed Tin Oxide Thin Films

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 851
Author(s):  
Christophe Avis ◽  
Jin Jang
Keyword(s):  
Grain Size ◽  
Carrier Concentration ◽  
Tin Oxide ◽  
Annealing Temperature ◽  
Optical Transmittance ◽  
Curing Temperature ◽  
Electrical And Optical Properties ◽  
Solution Processed ◽  
Annealing Temperatures ◽  
Grain Sizes

We report the effect of the curing (Tcuring) and annealing (Tanneal) temperatures on the structural, electrical, and optical properties of solution processed tin oxide. Tanneal was varied from 300 to 500 °C, and Tcuring from 200 °C to Tanneal. All Tanneal lead to a polycrystalline phase, but the amorphous phase was observed at Tanneal = 300 °C and Tcuring ranging from 250 to 300 °C. This could be explained by the melting point of the precursor (SnCl2), occurring at 250 °C. The crystallinity can be effectively controlled by the annealing temperature, but the curing temperature dramatically affects the grain size. We can reach grain sizes from 5–10 nm (Tcuring = 200 °C and Tanneal = 300 °C) to 30–50 nm (Tcuring = 500 °C and Tanneal = 500 °C). At a fixed Tanneal, Hall mobilities, carrier concentration, and conductivity increased with the curing temperature. The Hall mobility was in the range of 1 to 9.4 cm2/Vs, the carrier concentration was 1018 to 1019 cm−3, and the conductivity could reach ~20 S/cm when the grain size was 30–50 nm. The optical transmittance, the optical bandgap, the refractive index, and the extinction coefficient were also analyzed and they show a correlation with the annealing process.

Nucleation of Disorder in Fe3Al Alloys

1967 ◽  
Vol 25 ◽  
pp. 312-313
Author(s):  
P. R. Swann ◽  
W. R. Duff ◽  
R. M. Fisher
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Annealing Temperature ◽  
Antiphase Domain ◽  
Effect Of Temperature ◽  
Domain Structures ◽  
Transmission Electron ◽  
Domain Boundaries ◽  
Higher Temperature ◽  
The One

Recently we have investigated the phase equilibria and antiphase domain structures of Fe-Al alloys containing from 18 to 50 at.% Al by transmission electron microscopy and Mössbauer techniques. This study has revealed that none of the published phase diagrams are correct, although the one proposed by Rimlinger agrees most closely with our results to be published separately. In this paper observations by transmission electron microscopy relating to the nucleation of disorder in Fe-24% Al will be described. Figure 1 shows the structure after heating this alloy to 776.6°C and quenching. The white areas are B2 micro-domains corresponding to regions of disorder which form at the annealing temperature and re-order during the quench. By examining specimens heated in a temperature gradient of 2°C/cm it is possible to determine the effect of temperature on the disordering reaction very precisely. It was found that disorder begins at existing antiphase domain boundaries but that at a slightly higher temperature (1°C) it also occurs by homogeneous nucleation within the domains. A small (∼ .01°C) further increase in temperature caused these micro-domains to completely fill the specimen.

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