High temperature MOVPE growth of GaAs/AlGaAs device structures with tertiarybutylarsine

1990 ◽  
Vol 19 (4) ◽  
pp. 363-366 ◽  
Author(s):  
J. A. Baumann ◽  
C. Michel ◽  
H. Marek ◽  
H. B. Serreze ◽  
R. Schachter
Keyword(s):  
High Temperature ◽  
Device Structures ◽  
Movpe Growth

Challenges for High Temperature Silicon Carbide Electronics

2003 ◽  
Vol 764 ◽  
Author(s):  
C.-M. Zetterling ◽  
S.-M. Koo ◽  
E. Danielsson ◽  
W. Liu ◽  
S.-K. Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
Process Technology ◽  
High Temperature Electronics ◽  
Higher Power ◽  
Device Structures ◽  
Power Densities

AbstractSilicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

2020 ◽  
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flows on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

MOVPE Growth of GaAs on Si Using Tertiarybutylarsine

1992 ◽  
Vol 263 ◽  
Author(s):  
S. Miyagaki ◽  
S. Ohkubo ◽  
K. Takai ◽  
N. Takagi ◽  
M. Kimura ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Mirror Surface ◽  
Si Substrate ◽  
Carbide Layer ◽  
Movpe Growth ◽  
Crystal Gaas ◽  
Grown Single Crystal

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganio vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). When we preheated Si at 1000ºC in the atmosphere including TBAs, a carbide layer was formed on the Si surface. This led to polycrystalline GaAs growth. By carrying out high-temperature preheating in an H2 -only atmosphere and supplying TBAs after the preheating, we have successfully grown single-crystal GaAs with a mirror surface in a process completely free of AsH3.

MOVPE growth of improved nonequilibium MCT device structures for near-ambient-temperature heterodyne detectors

1997 ◽  
Author(s):  
C. D. Maxey ◽  
C. L. Jones ◽  
N. E. Metcalfe ◽  
R. A. Catchpole ◽  
Neil T. Gordon ◽  
...  
Keyword(s):  
Ambient Temperature ◽  
Device Structures ◽  
Movpe Growth ◽  
Heterodyne Detectors

Comparison of the Effects of Electron and Proton Irradiation on 4H-SiC and Si Device Structures

2018 ◽  
Vol 924 ◽  
pp. 217-220 ◽  
Author(s):  
Alexander A. Lebedev ◽  
Klavdia S. Davydovskaya ◽  
Anatoly M. Strel'chuk ◽  
Andrey N. Yakimenko ◽  
Vitalii V. Kozlovski
Keyword(s):  
High Temperature ◽  
Radiation Resistance ◽  
Proton Irradiation ◽  
Removal Rate ◽  
Schottky Diodes ◽  
Simultaneous Effect ◽  
Current Voltage ◽  
Device Structures ◽  
Current Voltage Characteristics ◽  
Mev Protons

The change in the current-voltage characteristics and in Nd-Navalues in the base of 4H-SiC Schottky diodes and JBS diodes under irradiation with 0.9 MeV electrons and 15 MeV protons has been studied. The carrier removal rate for the diodes irradiated with electrons was 0.07-0.15 cm-1, and that in the case of protons, 50-70 cm-1. It was shown that the devices under study retain rectifying current-voltage characteristics up to electron doses of ~1017cm-2. It was found that the radiation resistance of the SiC-based devices significantly exceeds that of silicon p-i-n-diodes with similar breakdown voltages. The simultaneous effect of high temperature and proton irradiation on the characteristics of 4H-SiC pn structures was examined.

4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

1997 ◽  
Vol 483 ◽  
Author(s):  
J. B. Casady ◽  
A. K. Agarwal ◽  
L. B. Rowland ◽  
S. Seshadri ◽  
R. R. Siergiej ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Semiconductor Material ◽  
Power Electronic ◽  
Power Devices ◽  
Switching Device ◽  
Electronic Switching ◽  
Device Structures ◽  
Near Term

AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

The Deposition, Fabrication and Characteristics of High Critical Temperature Devices

1987 ◽  
Vol 99 ◽  
Author(s):  
G. W. Morris ◽  
M. G. Blamire ◽  
R. E. Somekh ◽  
E. J. Tomlinson ◽  
J. E. Evetts
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Critical Temperature ◽  
Heat Treatments ◽  
Sputter Deposition ◽  
High Critical Temperature ◽  
The Third ◽  
Current Voltage ◽  
Device Structures ◽  
Temperature Heat

ABSTRACTIn the first section of this paper the sputter deposition of thin films of YBa2Cu3O7−x is considered. In the second section low and high temperature heat treatments are discussed in the light of the thermodynamics of the material and in the third the development, fabrication and current-voltage (IV) characteristics of a variety of device structures are described, including the hysterctic characteristics of certain YBa2Cu3O7−x / YBa2Cu3O7−x devices that reveal Josephson supcrcurrcnt tunnelling.

scholarly journals Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium

Materials ◽  
2021 ◽  
Vol 14 (2) ◽  
pp. 354
Author(s):  
Dario Schiavon ◽  
Elżbieta Litwin-Staszewska ◽  
Rafał Jakieła ◽  
Szymon Grzanka ◽  
Piotr Perlin
Keyword(s):  
Growth Rate ◽  
High Temperature ◽  
Low Temperature ◽  
Surface Morphology ◽  
Growth Temperature ◽  
High Growth ◽  
Growth Conditions ◽  
High Growth Rate ◽  
Pit Formation ◽  
Movpe Growth

The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.

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