4H-SiC Power Devices: Comparative Overview of UMOS, DMOS, and GTO Device Structures

1997 ◽  
Vol 483 ◽  
Author(s):  
J. B. Casady ◽  
A. K. Agarwal ◽  
L. B. Rowland ◽  
S. Seshadri ◽  
R. R. Siergiej ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
Semiconductor Material ◽  
Power Electronic ◽  
Power Devices ◽  
Switching Device ◽  
Electronic Switching ◽  
Device Structures ◽  
Near Term

AbstractSilicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic switching devices [1]. This paper presents an overview of SiC power devices and concludes that MOS Turn-Off Thyristor (MTOTM) is one of the most promising near term SiC switching device given its high power potential, ease of turn-off, 500°C operation and resulting reduction in cooling requirements. It is further concluded that in order to take advantage of SiC power devices, high temperature packages and components with double sided attachment need to be developed along with the SiC power devices.

Challenges for High Temperature Silicon Carbide Electronics

2003 ◽  
Vol 764 ◽  
Author(s):  
C.-M. Zetterling ◽  
S.-M. Koo ◽  
E. Danielsson ◽  
W. Liu ◽  
S.-K. Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Power ◽  
High Frequency ◽  
Process Technology ◽  
High Temperature Electronics ◽  
Higher Power ◽  
Device Structures ◽  
Power Densities

AbstractSilicon carbide has been proposed as an excellent material for high-frequency, high-power and high-temperature electronics. High power and high frequency applications have been pursued for quite some time in SiC with a great deal of success in terms of demonstrated devices. However, self-heating problems due to the much higher power densities that result when ten times higher electrical fields are used inside the devices needs to be addressed. High-temperature electronics has not yet experienced as much attention and success, possibly because there is no immediate market. This paper will review some of the advances that have been made in high-temperature electronics using silicon carbide, starting from process technology, continuing with device design, and finishing with circuit examples. For process technology, one of the biggest obstacles is long-term stable contacts. Several device structures have been electrically characterized at high temperature (BJTs and FETs) and will be compared to surface temperature measurements and physical device simulation. Finally some proposed circuit topologies as well as novel solutions will be presented.

Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

scholarly journals Carbonization and Treatment the High Temperature Distortion of Thoriated Tungsten Cathode for High Power Electronic Tubes

2009 ◽  
Vol 6 (4) ◽  
pp. 763-769
Author(s):  
Baghdad Science Journal
Keyword(s):  
High Temperature ◽  
High Power ◽  
Vacuum Chamber ◽  
Optical Pyrometer ◽  
Power Electronic ◽  
Heat Treated ◽  
Pressure Time ◽  
Thoriated Tungsten ◽  
Distortion Effect ◽  
Different Diameters

A metal mandrel was designed for manufacturing the cathodes of high power electron tube ( Tetrode ) used in broadcasting transmitting tubes type TH558 and CQS200.The cathodes were manufactured in the present work from thoriated tungsten wires ( 2? ThO2- W) with different diameters .These cathodes were carbonized in sequences of processes to determine the carbonization parameters (temperature, pressure, time, current and voltage).Then the carbonized cathodes dimension were accurately measured to determine the deviation due to the high temperature distortion effect at about 1800°C .the distorted cathodes due to the carbonization process was treated when it was subjected inside the vacuum chamber and heat treated again .The carbonized cathode distortions as a function of temperature were measured in the range of (1500°C-1800°C).The temperature was determined using an optical pyrometer and also calculated using Stephan's-Boltzmann relation.

Effect of High Temperature Ageing on Active and Passive Power Devices

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000228-000235
Author(s):  
Cyril Buttay ◽  
Remi Robutel ◽  
Christian Martin ◽  
Christophe Raynaud ◽  
Simeon Dampieni ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Magnetic Materials ◽  
Power Converter ◽  
Power Devices ◽  
Active Devices ◽  
Passive Power ◽  
Temperature Ageing

The power devices needed to build a high-temperature converter (inductors, capacitors and active devices) have been stored at 200°C for up to 1000 hrs. Their characteristics have been monitored. Capacitors and magnetic materials from various manufacturers and technologies are tested, as well as silicon-carbide diodes. It is shown that by carefully choosing the components, it is possible to build a reliable power converter operating at high temperature.

Ion Implantation and Annealing Effects in Silicon Carbide

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Heera ◽  
W. Skorupa
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Ion Implantation ◽  
High Power ◽  
High Frequency ◽  
Ion Beam ◽  
Surface Erosion ◽  
Annealing Effects ◽  
Ion Ranges ◽  
Induced Crystallization

AbstractSiC is a promising semiconductor material for high-power/high-frequency and hightemperature electronic applications. For selective doping of SiC ion implantation is the only possible process. However, relatively little is known about ion implantation and annealing effects in SiC. Compared to ion implantation into Si there is a number of specific features which have to be considered for successful ion beam processing of SiC. A brief review is given on some aspects of ion implantation in and annealing of SiC. The ion implantation effects in SiC are discussed in direct comparison to Si. The following issues are addressed: ion ranges, radiation damage, amorphization, high temperature implantation, ion beim induced crystallization and surface erosion.

scholarly journals Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

2015 ◽  
Vol 821-823 ◽  
pp. 814-817 ◽  
Author(s):  
Thibaut Chailloux ◽  
Cyril Calvez ◽  
Dominique Tournier ◽  
Dominique Planson
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Effects Of Temperature

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

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