MOVPE Growth of GaAs on Si Using Tertiarybutylarsine

1992 ◽  
Vol 263 ◽  
Author(s):  
S. Miyagaki ◽  
S. Ohkubo ◽  
K. Takai ◽  
N. Takagi ◽  
M. Kimura ◽  
...  
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Mirror Surface ◽  
Si Substrate ◽  
Carbide Layer ◽  
Movpe Growth ◽  
Crystal Gaas ◽  
Grown Single Crystal

ABSTRACTWe developed GaAs heteroepitaxy on a Si substrate by metalorganio vapor phase epitaxy (MOVPE) using tertiarybutylarsine (TBAs). When we preheated Si at 1000ºC in the atmosphere including TBAs, a carbide layer was formed on the Si surface. This led to polycrystalline GaAs growth. By carrying out high-temperature preheating in an H2 -only atmosphere and supplying TBAs after the preheating, we have successfully grown single-crystal GaAs with a mirror surface in a process completely free of AsH3.

High-temperature growth of thick AlN layers on sapphire (0001) substrates by solid source halide vapor-phase epitaxy

2008 ◽  
Vol 310 (17) ◽  
pp. 4016-4019 ◽  
Author(s):  
Ken-ichi Eriguchi ◽  
Takako Hiratsuka ◽  
Hisashi Murakami ◽  
Yoshinao Kumagai ◽  
Akinori Koukitu
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Temperature Growth

GaInAsP/InP ORGANOMETALLIC VAPOR PHASE EPITAXY FOR RESEARCH AND FABRICATION OF DEVICES

1990 ◽  
Vol 01 (03n04) ◽  
pp. 347-367 ◽  
Author(s):  
KAZUHITO FURUYA ◽  
YASUYUKI MIYAMOTO
Keyword(s):  
Quantum Well ◽  
Single Crystal ◽  
Vapor Phase ◽  
Optical Communication ◽  
Ballistic Transport ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Quantum Well Lasers ◽  
Organometallic Vapor Phase Epitaxy ◽  
Growth Technique

GaInAsP/InP organometallic vapor phase epitaxy (OMVPE) is widely used for the fabrication of lasers and detectors used in optical communication. Here we describe the apparatus and growth technique of OMVPE and point out important growth conditions to obtain device quality single-crystal materials. Our research includes the use of OMVPE for the study of quantum-well lasers, ballistic-transport electron devices and nanometer heterostructures.

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

2007 ◽  
Vol 46 (No. 14) ◽  
pp. L307-L310 ◽  
Author(s):  
Krishnan Balakrishnan ◽  
Akria Bandoh ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Dislocation Content

Drastic Reduction of Dislocation Density in Semipolar (1122) GaN Stripe Crystal on Si Substrate by Dual Selective Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (1S1) ◽  
pp. 01AD04 ◽  
Author(s):  
Tasuku Murase ◽  
Tomoyuki Tanikawa ◽  
Yoshio Honda ◽  
Masahito Yamaguchi ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Si Substrate ◽  
Drastic Reduction ◽  
Organic Vapor ◽  
Metal Organic

High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DH07 ◽  
Author(s):  
Momoko Deura ◽  
Yoshiyuki Kondo ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi ◽  
Yukihiro Shimogaki ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Annealing Effect ◽  
High Temperature Annealing ◽  
Group V ◽  
Organic Vapor ◽  
Metal Organic

Effect of the Ammonia Flow on the Formation of Microstructure Defects in GaN Layers Grown by High-Temperature Vapor Phase Epitaxy

2016 ◽  
Vol 46 (3) ◽  
pp. 1612-1619 ◽  
Author(s):  
M. Barchuk ◽  
G. Lukin ◽  
F. Zimmermann ◽  
C. Röder ◽  
M. Motylenko ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
High Temperature Vapor
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