Microstructure — Electrical properties relationship of YSZ thin films reactively sputter-deposited at different pressures

Ionics ◽  
2005 ◽  
Vol 11 (3-4) ◽  
pp. 301-305 ◽  
Author(s):  
P. Briois ◽  
E. Gourba ◽  
A. Billard ◽  
A. Ringuedé ◽  
M. Cassir
2013 ◽  
Vol 582 ◽  
pp. 157-160 ◽  
Author(s):  
Takumi Oshima ◽  
Masaya Nohara ◽  
Takuya Hoshina ◽  
Hiroaki Takeda ◽  
Takaaki Tsurumi

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) // MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.


1986 ◽  
Vol 77 ◽  
Author(s):  
S. N. Venkatesh ◽  
E. S. Ramakrishnan ◽  
K. C. Jungling ◽  
S. B. Krupanidhi

ABSTRACTHighly crystalline and c-axis oriented zinc oxide thin films were sputter deposited from a ceramic target using rf diode and magnetron sputtering techniques. A comparative evaluation of structure and electrical characteristics of ZnO films in the MZS and MZOS configurations is presented and the results are discussed. The physical and electrical properties were significantly influenced by highly energetic particles originating from the presence of oxygen neutrals in the plasma during the growth process and the behavior differed between the diode and magnetron sputtering processes.


2019 ◽  
Vol 690 ◽  
pp. 137540 ◽  
Author(s):  
Florian G. Cougnon ◽  
Isabella C. Schramm ◽  
Diederik Depla

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