Studies of MZS and MZOS Structures with Zinc Oxide Deposited by Conventional Rf Diode and Magnetron Sputtering Techniques

1986 ◽  
Vol 77 ◽  
Author(s):  
S. N. Venkatesh ◽  
E. S. Ramakrishnan ◽  
K. C. Jungling ◽  
S. B. Krupanidhi
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Comparative Evaluation ◽  
Growth Process ◽  
Zno Films ◽  
Electrical Characteristics ◽  
Ceramic Target ◽  
Sputter Deposited

ABSTRACTHighly crystalline and c-axis oriented zinc oxide thin films were sputter deposited from a ceramic target using rf diode and magnetron sputtering techniques. A comparative evaluation of structure and electrical characteristics of ZnO films in the MZS and MZOS configurations is presented and the results are discussed. The physical and electrical properties were significantly influenced by highly energetic particles originating from the presence of oxygen neutrals in the plasma during the growth process and the behavior differed between the diode and magnetron sputtering processes.

On the UV-light-induced Desorption/Adsorption Mechanism of Atmospheric Species in Solution-processed Zinc Oxide Thin Films

MRS Advances ◽  
2019 ◽  
Vol 4 (2) ◽  
pp. 111-117
Author(s):  
José Bruno Cantuária ◽  
Giovani Gozzi ◽  
Lucas Fugikawa Santos
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Uv Light ◽  
Atmospheric Oxygen ◽  
Low Cost ◽  
Environmental Parameters ◽  
Zno Films ◽  
Desorption Rate ◽  
Transparent Semiconductor

AbstractZinc oxide (ZnO) is a n-type transparent semiconductor which can be processed by low cost techniques (such as spray-pyrolysis and spin-coating) and can be applied as the active layer of thin-films transistors (TFTs). The electrical properties of ZnO films are strongly affected when the device is exposed to room conditions and/or UV-light, suggesting possible applications as UV or/and gas sensors. Atmospheric oxygen molecules adsorbed on ZnO surface act as charge traps, decreasing the material conductivity. The incidence of UV-light causes an increase of the material conductivity due to the photogeneration of electron-hole pairs via direct band-to-band transitions (classic photoconductivity process) and due to the desorption of oxygen molecules, which presents a relatively slower response and is a less understood mechanism. In the current paper, we study the influence of environmental parameters, such as temperature, humidity and UV-light intensity, on the electrical properties of spin-coated ZnO thin films to understand the role of the desorption mechanism on the photoconductivity process. The analysis of the device current vs. time curves shows the existence of two light-induced desorption mechanisms: i) one which increases the electrical conductivity of the ZnO film (desorption-like process) and ii) a second one which decreases the conductivity (adsorption-like process). A Plackett-Burman design of experiment (DOE) was used to study the influence of characterization factors like UV intensity, temperature and humidity on electrical parameters obtained from the experimental curves. We observed that the desorption-like process is a first order mechanism, exhibiting desorption rate proportional to n(t), where n(t) represents the adsorbate concentration as a function of the time, whereas the adsorption-like mechanism exhibits a desorption rate proportional to the forth power of n(t).

Zinc Oxide Thin Films Grown on Nanostructured Al Thin Layer/Glass Substrate by RF Magnetron Sputtering

2011 ◽  
Vol 239-242 ◽  
pp. 777-780
Author(s):  
Ting Zhi Liu ◽  
Shu Wang Duo ◽  
C Y Hu ◽  
C B Li
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Thin Layer ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zno Film ◽  
Substrate Roughness ◽  
Axis Orientation

ZnO films were deposited on nanostructured Al (n-Al) /glass substrate by RF magnetron sputtering. The results shows that the relation (I (002) /I (100) ≈ I annealed (002)/I annealed (100) ≈1.1) shows the rough n-Al surface is suitable for the growth of a-axis orientation. Meanwhile, the influences of substrate roughness, crystallinity and (101) plane of ZnO film deposited on n-Al layer have been discussed. XPS implies more oxygen atoms are bound to Aluminum atoms, which result in the increase of high metallic Zn in the film.

MANIPULATING THE STRUCTURAL AND ELECTRICAL PROPERTIES OF ZINC OXIDE THIN FILMS BY CHANGING THE SPUTTERING POWER OF RADIO FREQUENCY MAGNETRON SPUTTERING

2017 ◽  
Vol 24 (Supp01) ◽  
pp. 1850006 ◽  
Author(s):  
YANG WANG ◽  
CHENGBIAO WANG ◽  
ZHIJIAN PENG ◽  
QI WANG ◽  
XIULI FU
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Interstitial Zinc ◽  
Sputtering Power

Oxygen-deficient zinc oxides thin films with different levels of defects were prepared by using radio frequency magnetron sputtering method with sintered zinc oxide disk as target at different sputtering powers. The composition, structure and electrical properties of the prepared films were investigated. Under the present conditions, all the obtained films possessed würtzite structure, which were growing preferentially along the [Formula: see text]-axis. The thickness of the films, the size of the zinc oxide grains and the content of Zn atoms increased with increasing sputtering power. In the films deposited at a sputtering power from 52[Formula: see text]W to 212[Formula: see text]W, the main defect was interstitial zinc. With increasing sputtering power, due to the enhanced number of interstitial zinc in the films, their room-temperature electrical resistivity would decrease, which was controlled by electron conduction. At increasing measurement temperature, their electrical resistivity would increase, owing to the decrease of defect concentration caused by oxidization.

Aluminum-Doped Zinc Oxide as Transparent Electrode Materials

2011 ◽  
Vol 685 ◽  
pp. 6-12 ◽  
Author(s):  
Yu Long Zhang ◽  
Xian Peng Zhang ◽  
Rui Qin Tan ◽  
Ye Yang ◽  
Jun Hua Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Electrode Materials ◽  
Sol Gel ◽  
Argon Plasma ◽  
Transparent Electrode ◽  
Zno Thin Films ◽  
Zno Films ◽  
Doped Zno

Pristine and Al-doped zinc oxide nanopowders were synthesized via a surfactant-assisted complex sol-gel method, possessing a pure ZnO phase structure and controllable grain size which was characterized by X-ray diffraction and scanning electron microscopy. Using these nanopowders, the pristine and Al-doped ZnO magnetron sputtering targets were prepared following a mold-press, cold isostatical-press and schedule sintering temperature procedure. The relative density of these as-prepared targets was tested by Archimedes’ method on densitometer. All of the results were above 95 theory density percents, and the resistivity was tested on four-probe system at a magnitude of 10-2Ω cm. Related pristine ZnO thin films and Al-doped ZnO thin films were fabricated by magnetron sputtering method, respectively. The pristine and Al-doped ZnO films deposited on the quartz glass by dc sputtering owned a (002) orientation with a thickness of 350 nm at a deposition power of 100 W for two hours under an argon plasma. A good optical transparency above 80% and low resistivity of 1.60×10-3Ω cm were obtained with a deposition temperature of 573 K. The optical energy bandgap could be tailored by Al doping at 4 at.% Al.

Influence of Substrate Temperature on the Characteristics of Zinc Oxide Thin Films Deposited by Magnetron Sputtering

2012 ◽  
Vol 502 ◽  
pp. 111-115
Author(s):  
J.H. Gu ◽  
Z.Y. Zhong ◽  
X. He ◽  
J. Hou ◽  
C.Y. Yang
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Spectrum ◽  
Optical Characteristics ◽  
Zno Thin Films ◽  
Zno Films ◽  
Sintered Ceramic ◽  
Influence Of Substrate

Zinc oxide (ZnO) thin films were deposited by RF magnetron sputtering on glass substrates employing a sintered ceramic target and pure argon gas. The influence of substrate temperature on microstructure and optical characteristics of the deposited films were investigated by X-ray diffractometer (XRD) and spectrophotometer. The results demonstrate that all the ZnO films have preferred orientation along (002) direction. The substrate temperature significantly affects the crystalline quality and optical characteristics of the ZnO thin films. With the increase of substrate temperature, the mean grain size, lattice spacing and optical bandgap of the films increase, the dislocation density and micro strain decrease, and the average transmitance in the wavelength range of the visible spectrum also increases.

scholarly journals Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

2021 ◽  
Vol 9 (12) ◽  
pp. 4307-4315
Author(s):  
Tai Nguyen ◽  
Nathalie Valle ◽  
Jérôme Guillot ◽  
Jérôme Bour ◽  
Noureddine Adjeroud ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Growth Mechanism ◽  
Growth Process ◽  
Atomic Layer ◽  
Zno Thin Films ◽  
Zno Films ◽  
Layer Deposition ◽  
Oxygen Gas

The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen 18O from the water precursor and oxygen 16O from the gas.

Hydrogen Diffusion in Zinc Oxide Thin Films

2009 ◽  
Vol 1165 ◽  
Author(s):  
Wolfhard Beyer ◽  
Uwe Breuer ◽  
Frank Hamelmann ◽  
Jürgen Hüpkes ◽  
Andrea Stärk ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Hydrogen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapour ◽  
Zno Films ◽  
Oxide Thin Films ◽  
Compact Structure ◽  
Pressure Chemical ◽  
Sputter Deposited

AbstractHydrogen diffusion in zinc oxide thin films was studied by secondary ion mass spectrometry (SIMS) measurements, investigating the spreading of implanted deuterium profiles by annealing. By effusion measurements of implanted rare gases He and Ne the microstructure of the material was characterized. While for material prepared by low pressure chemical vapour deposition an interconnected void structure and a predominant diffusion of molecular hydrogen was found, sputter-deposited ZnO films showed a more compact structure and long range diffusion of atomic hydrogen. Hydrogen diffusion energies of 1.8 – 2 eV, i.e. higher than reported in literature were found. The results are discussed in terms of a H diffusion model analogous to the model applied for hydrogen diffusion in hydrogenated amorphous and microcrystalline silicon.

scholarly journals Passivation Effect on ZnO Films by SF6 Plasma Treatment

Crystals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 236 ◽  
Author(s):  
Yumeng Xu ◽  
Baoxue Bo ◽  
Xin Gao ◽  
Zhongliang Qiao
Keyword(s):  
Surface Roughness ◽  
Grain Size ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Reverse Current ◽  
Zno Films ◽  
Current Voltage ◽  
Plasma Passivation ◽  
Heterojunction Diodes

The passivation effects of SF6 plasma on zinc oxide (ZnO) films prepared by magnetron sputtering were researched. After the SF6 plasma passivation of ZnO films, the grain size increases, there is low surface roughness, and a small amount of Zn-F bonds are formed, resulting in the narrowing of band gap. The photoluminescence (PL) intensity of SF6-passivated ZnO films has a 120% increase compared to the untreated samples, and the reduction in defects can increase the resistivity and stability of ZnO films. ZnO films are used in the preparation of ZnO/p-Si heterojunction diodes. The results of the measurement of current voltage (J–V) show that the reverse current is reduced after SF6 plasma passivation, indicating an improvement in the electrical properties of ZnO films.

Growth, microstructure and electrical properties of sputter-deposited hafnium oxide (HfO2) thin films grown using a HfO2 ceramic target

2011 ◽  
Vol 257 (6) ◽  
pp. 2197-2202 ◽  
Author(s):  
B. Aguirre ◽  
R.S. Vemuri ◽  
D. Zubia ◽  
M.H. Engelhard ◽  
V. Shutthananadan ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Hafnium Oxide ◽  
Ceramic Target ◽  
Sputter Deposited
Sign in / Sign up

Export Citation Format

Share Document