Computer controlled spreading resistance system for measurement of carrier concentration profiles of silicon structures

1993 ◽  
Vol 43 (7) ◽  
pp. 723-731
Author(s):  
Otto Csabay ◽  
Marian Jamrich ◽  
Helmar Frank
Keyword(s):  
Carrier Concentration ◽  
Concentration Profiles ◽  
Spreading Resistance ◽  
Resistance System ◽  
Silicon Structures ◽  
Computer Controlled

Millisecond Duration Annealing of Boron Implants in Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
D. A. Smith ◽  
R. A. McMahon ◽  
H. Ahmed ◽  
D. J. Godfrey
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Mass Spectroscopy ◽  
Concentration Profiles ◽  
Spreading Resistance ◽  
Isothermal Anneal ◽  
Wide Range ◽  
Secondary Ion

ABSTRACTA dual electron beam machine has been used to anneal boron implanted layers in order to study the diffusion and activation behaviour over a wide range of doses. The annealed implants have been characterized by spreading resistance profiling and secondary ion mass spectroscopy (SIMS). Carrier concentration profiles show that millisecond duration anneals can activate boron implants. A boron dose of 1E16 ions/cm2 was annealed to give a sheet resistance of 30 Ωsq with 40% of the implant activated. The SIMS technique showed there were no significant differences between the atomic profiles of the as-implanted samples and specimens subjected to a millisecond anneal or to a low temperature 850°C rapid isothermal anneal for 10s.

Molecular Ion S2+ and SiFn+ implantations into GaAs

1989 ◽  
Vol 147 ◽  
Author(s):  
W. D. Fan ◽  
W. Y. Wang
Keyword(s):  
Carrier Concentration ◽  
Active Layer ◽  
Concentration Profiles ◽  
Carrier Distribution ◽  
Furnace Annealing ◽  
Molecular Ion ◽  
Pl Spectra ◽  
Active Layers ◽  
Activation Efficiency

AbstractMolecular ion S2+ and SiFn+ implantations into GaAs have been investigated to form very thin active layers. After implantation, the transient annealing (TA) and furnace annealing (FA) were used. The measurements of activation efficiency, mobility, carrier concentration profiles and PL spectra were carried out. The experiments show that after TA, the activation efficiency, mobility and carrier distribution are almost the same between samples implanted with S+ at an energy of 50KeV to a dose of 3×1013cm−2 and S+2 at 100KeV to 1.5×1013cm−2. It shows that the damage of S2-implanted samples can be removed by TA, and a very thin active layer can be formed by the implantation of S2+ at 50KeV. For SiFn-implanted samples, the activation efficiency and mobility. decrease with increase of the implanted ion mass. As+ co-implantation into SiF-implanted samples has been used to improve both activation efficiency and mobility. After comparison with the properties of the SiFt implantation, S2+implantation is more acceptable to form thin active layers.

Mobility and carrier‐concentration profiles ofP+ion‐implanted, isothermally annealed silicon crystals

1982 ◽  
Vol 53 (1) ◽  
pp. 774-776 ◽  
Author(s):  
T. Mitsuishi ◽  
Y. Sasaki ◽  
Huynh van Thieu ◽  
N. Yoshihiro
Keyword(s):  
Carrier Concentration ◽  
Concentration Profiles ◽  
Silicon Crystals ◽  
Ion Implanted

Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+‐implanted Si(100)

1993 ◽  
Vol 62 (24) ◽  
pp. 3183-3185 ◽  
Author(s):  
Qing‐tai Zhao ◽  
Zhong‐lie Wang ◽  
Tian‐bing Xu ◽  
Pei‐ran Zhu ◽  
Jun‐si Zhou
Keyword(s):  
Carrier Concentration ◽  
Ion Beam ◽  
Concentration Profiles ◽  
Defect Engineering
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