Effects of ion beam defect engineering on carrier concentration profiles in 50 keV P+‐implanted Si(100)

1993 ◽  
Vol 62 (24) ◽  
pp. 3183-3185 ◽  
Author(s):  
Qing‐tai Zhao ◽  
Zhong‐lie Wang ◽  
Tian‐bing Xu ◽  
Pei‐ran Zhu ◽  
Jun‐si Zhou
Keyword(s):  
Carrier Concentration ◽  
Ion Beam ◽  
Concentration Profiles ◽  
Defect Engineering

Tunable Infrared Optics Enabled by Defect-Engineering of Vanadium Dioxide Using Focused Ion Beam

2021 ◽  
Author(s):  
Chenghao Wan ◽  
Jura Rensberg ◽  
Zhen Zhang ◽  
Martin Hafermann ◽  
Hongyan Mei ◽  
...  
Keyword(s):  
Vanadium Dioxide ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Defect Engineering ◽  
Infrared Optics

Defect Engineering in Ion Beam Synthesis of SiC and SiO2 in Si

2005 ◽  
pp. 321-326
Author(s):  
R. Kögler ◽  
A. Mücklich ◽  
J.R. Kaschny ◽  
H. Reuther ◽  
F. Eichhorn ◽  
...  
Keyword(s):  
Ion Beam ◽  
Defect Engineering ◽  
Ion Beam Synthesis

Molecular Ion S2+ and SiFn+ implantations into GaAs

1989 ◽  
Vol 147 ◽  
Author(s):  
W. D. Fan ◽  
W. Y. Wang
Keyword(s):  
Carrier Concentration ◽  
Active Layer ◽  
Concentration Profiles ◽  
Carrier Distribution ◽  
Furnace Annealing ◽  
Molecular Ion ◽  
Pl Spectra ◽  
Active Layers ◽  
Activation Efficiency

AbstractMolecular ion S2+ and SiFn+ implantations into GaAs have been investigated to form very thin active layers. After implantation, the transient annealing (TA) and furnace annealing (FA) were used. The measurements of activation efficiency, mobility, carrier concentration profiles and PL spectra were carried out. The experiments show that after TA, the activation efficiency, mobility and carrier distribution are almost the same between samples implanted with S+ at an energy of 50KeV to a dose of 3×1013cm−2 and S+2 at 100KeV to 1.5×1013cm−2. It shows that the damage of S2-implanted samples can be removed by TA, and a very thin active layer can be formed by the implantation of S2+ at 50KeV. For SiFn-implanted samples, the activation efficiency and mobility. decrease with increase of the implanted ion mass. As+ co-implantation into SiF-implanted samples has been used to improve both activation efficiency and mobility. After comparison with the properties of the SiFt implantation, S2+implantation is more acceptable to form thin active layers.

Mobility and carrier‐concentration profiles ofP+ion‐implanted, isothermally annealed silicon crystals

1982 ◽  
Vol 53 (1) ◽  
pp. 774-776 ◽  
Author(s):  
T. Mitsuishi ◽  
Y. Sasaki ◽  
Huynh van Thieu ◽  
N. Yoshihiro
Keyword(s):  
Carrier Concentration ◽  
Concentration Profiles ◽  
Silicon Crystals ◽  
Ion Implanted

Gettering effects in BF2‐implanted Si(100) by ion‐beam defect engineering

1995 ◽  
Vol 77 (10) ◽  
pp. 5014-5019 ◽  
Author(s):  
Qing‐Tai Zhao ◽  
Zhong‐Lie Wang ◽  
Yongming Cao ◽  
Tian‐Bing Xu ◽  
Pei‐Ran Zhu
Keyword(s):  
Ion Beam ◽  
Defect Engineering
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