The comparison of reactive ion etching and plasma etching in a parallel-plate reactor

1988 ◽  
Vol 38 (3) ◽  
pp. 338-342 ◽  
Author(s):  
Z. Novotný
Keyword(s):  
Plasma Etching ◽  
Parallel Plate ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Parallel Plate Reactor

Plasma Etching of Silicon at a High Flow and a High Pressure of NF3 in Reactive Ion Etching

2019 ◽  
Vol 74 (12) ◽  
pp. 1135-1139
Author(s):  
Hee-Tae Kwon ◽  
Woo-Jae Kim ◽  
Gi-Won Shin ◽  
Hwan-Hee Lee ◽  
Tae-Hyun Lee ◽  
...  
Keyword(s):  
High Pressure ◽  
Plasma Etching ◽  
Reactive Ion Etching ◽  
High Flow ◽  
Ion Etching

The Influence of HBr Discharge Ambience on Poly-Si/SiO2 Etching Selectivity

1991 ◽  
Vol 223 ◽  
Author(s):  
E. Ikawa ◽  
K. Tokashiki ◽  
T. Kikkawa ◽  
Y. Teraoka ◽  
I. Nishiyama
Keyword(s):  
Plasma Etching ◽  
Parallel Plate ◽  
Etch Rate ◽  
Etching Rate ◽  
Mass Analysis ◽  
Ion Etching ◽  
Loading Effect ◽  
Batch Type ◽  
Etching Selectivity ◽  
Hbr Plasma

ABSTRACTThe influence of HBr discharge ambience on SiO2 etching is investigated. A batch type parallel-plate reactive ion etching (RIE) dry etcher was used. The discharge ambience was changed by changing the numbers of poly-Si and SiO2 wafers in the same chamber. It is found that as the number of poly-Si wafers increased, the poly-Si etch rate slightly decreased due to a loading effect and SiO2 etching rate drastically increased. The selectivity of poly-Si / SiO2 decreased with increasing the ratio of the loaded poly-Si number in the same chamber. When A12O3 wafers instead of poly-Si wafers were loaded with SiO2 substrates, SiO2 etching rate enhancement did not occur. Therefore, increase of SiO2 etch rate could not be explained using a loading effect. From the results of mass analysis during etching in Si contained HBr plasma, etching products SiBrx (x=1,2,3) peaks were observed. Namely, when the Si etching products were supplied to SiO2 surface, SiO2 etch rate increased. In order to suppress the enhancement of SiO2 etch rate, the etch temperature must be reduced.

The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Native Oxide ◽  
Short Exposure ◽  
Ion Etching ◽  
Inductively Coupled ◽  
High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

Reactive ion etching and plasma etching of tungsten

1993 ◽  
Vol 21 (1-4) ◽  
pp. 329-332 ◽  
Author(s):  
P. Verdonck ◽  
G. Brasseur ◽  
J. Swart
Keyword(s):  
Plasma Etching ◽  
Reactive Ion Etching ◽  
Ion Etching

Mechanism of Dry Etching of Silicon Dioxide: a Case of Direct Reactive Ion Etching

1984 ◽  
Vol 38 ◽  
Author(s):  
Ch. Steinbruchel ◽  
H. W. Lehmann ◽  
K. Frick
Keyword(s):  
Ion Beam ◽  
Reactive Ion Etching ◽  
Plasma Chemistry ◽  
Experimental Conditions ◽  
Ion Etching ◽  
Ion Density ◽  
Ion Beam Etching ◽  
Plasma Species ◽  
Parallel Plate Reactor ◽  
Sputter Etching

AbstractReactive sputter etching of SiO2 with CHF3-O2 plasmas has been investigated in a parallel plate reactor by combining etch rate measurements with concurrent determination of ion densities (using a Langmuir probe) and the composition of neutral plasma species (using a mass spectrometer). Etch rates are found to follow the ion density and to be fairly independent of the plasma chemistry under most experimental conditions. Moreover, a comparison of reactive sputter etching and reactive ion beam etching of SiO2 with CHF3 and CF4 shows that etch yields per incoming ion are essentially independent of the flux of neutral radicals to the substrate. This strongly suggests as the dominant etch mechanism for SiO2 direct reactive ion etching, where ions themselves are the main reactants in the etch reaction. Measured values of etch yields are consistent with this picture.

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