Selective reactive ion etching of silicon nitride on oxide in a multifacet (‘‘HEX’’) plasma etching machine

1989 ◽  
Vol 7 (3) ◽  
pp. 1145-1149 ◽  
Author(s):  
Hans J. Stocker
Keyword(s):  
Silicon Nitride ◽  
Plasma Etching ◽  
Reactive Ion Etching ◽  
Ion Etching

Plasma Etching of Silicon at a High Flow and a High Pressure of NF3 in Reactive Ion Etching

2019 ◽  
Vol 74 (12) ◽  
pp. 1135-1139
Author(s):  
Hee-Tae Kwon ◽  
Woo-Jae Kim ◽  
Gi-Won Shin ◽  
Hwan-Hee Lee ◽  
Tae-Hyun Lee ◽  
...  
Keyword(s):  
High Pressure ◽  
Plasma Etching ◽  
Reactive Ion Etching ◽  
High Flow ◽  
Ion Etching

Etch mechanism in the reactive ion etching of silicon nitride

1991 ◽  
Vol 9 (3) ◽  
pp. 775-778 ◽  
Author(s):  
J. Dulak ◽  
B. J. Howard ◽  
Ch. Steinbrüchel
Keyword(s):  
Silicon Nitride ◽  
Reactive Ion Etching ◽  
Ion Etching

The effect of BCl3 pretreatment on the etching of AlN in Cl2-based plasma

2008 ◽  
Vol 1108 ◽  
Author(s):  
Xiaoyan Xu ◽  
Vladimir Kuryatkov ◽  
Boris Borisov ◽  
Mahesh Pandikunta ◽  
Sergey A Nikishin ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Native Oxide ◽  
Short Exposure ◽  
Ion Etching ◽  
Inductively Coupled ◽  
High Etch Rate

AbstractThe effect of BCl3 and BCl3/Ar pretreatment on Cl2/Ar and Cl2/Ar/BCl3 dry etching of AlN is investigated using inductively coupled plasma reactive ion etching. The native AlN oxide can be effectively removed by a short exposure to BCl3 or BCl3/Ar plasma. Compared to the chlorine based plasma etching, BCl3/Ar is found to have the highest etch rate for both AlN and its native oxide. Following removal of the native oxide, Cl2/Ar/BCl3 plasma etching with 15% BCl3 fraction results in a high etch rate ˜ 87 nm/min and modest increases in the surface roughness.

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