Diamond synthesis by DC thermal plasma CVD at 1 atm

1991 ◽  
Vol 11 (3) ◽  
pp. 387-394 ◽  
Author(s):  
Z. P. Lu ◽  
L. Stachowicz ◽  
P. Kong ◽  
J. Heberlein ◽  
E. Pfender
Keyword(s):  
Thermal Plasma ◽  
Diamond Synthesis ◽  
Plasma Cvd

Diamond synthesis by thermal-plasma CVD (chemical vapor deposition)

1992 ◽  
Vol 64 (5) ◽  
pp. 751-758 ◽  
Author(s):  
Seiichiro Matsumoto ◽  
Ikuo Hosoya ◽  
Yuji Manabe ◽  
Yukinobu Hibion
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Plasma ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Diamond Synthesis ◽  
Plasma Cvd

scholarly journals Super High Rate Thermal Plasma CVD of Ceramics

1989 ◽  
Vol 97 (1121) ◽  
pp. 49-55 ◽  
Author(s):  
Hideyuki MURAKAMI ◽  
Hifumi NAGAI ◽  
Tohru IROKAWA ◽  
Toyonobu YOSHIDA ◽  
Kazuo AKASHI
Keyword(s):  
Thermal Plasma ◽  
High Rate ◽  
Plasma Cvd

Textured Zinc Oxide by Expanding Thermal Plasma CVD: the Effect of Aluminum Doping

2002 ◽  
Vol 730 ◽  
Author(s):  
R. Groenen ◽  
E.R. Kieft ◽  
J.L. Linden ◽  
M.C.M. van de Sanden
Keyword(s):  
Surface Texture ◽  
Thermal Plasma ◽  
Band Gap Energy ◽  
Zno Films ◽  
Free Carrier Absorption ◽  
Plasma Cvd ◽  
Reflection And Transmission ◽  
Glass Substrates ◽  
Direct Measurements ◽  
Carrier Absorption

AbstractAluminum doped ZnO films are deposited on glass substrates at a temperature of 200°C by expanding thermal plasma CVD. Surface texture, morphology and crystal structure have been studied by AFM, SEM and XRD. A rough surface texture, which is essential for application as front electrode in thin film solar cells, is obtained during deposition. The addition of aluminum as a dopant results in distinct differences in film morphology, a transition from large, rounded crystallites to a more pyramid-like structure is observed. The structure of films is hexagonal with a preferred crystal orientation in the faces (002) and (004), indicating that films are oriented with their c-axes perpendicular to the substrate plane. In addition, spectroscopic ellipsometry is used to evaluate optical and electronic film properties. The presence of aluminum donors in doped films is confirmed by a shift in the ZnO band gap energy from 3.32 to 3.65 eV. In combination with reflection and transmission measurements in the visible and NIR ranges, film resistivities have been obtained from the free-carrier absorption. These results are consistent with direct measurements. Resistivities as low as 6.0 10-4 Ωcm have been obtained.

Thermometry of gas layers in thermal plasma CVD by pulsed-laser Rayleigh scattering

1996 ◽  
Vol 62 (1) ◽  
pp. 71-75 ◽  
Author(s):  
J. Larjo ◽  
J. Vattulainen ◽  
R. Hernberg
Keyword(s):  
Thermal Plasma ◽  
Rayleigh Scattering ◽  
Pulsed Laser ◽  
Plasma Cvd

scholarly journals Trial of Diamond Synthesis with High-Growth Rate by DC Plasma CVD Using a Diamond Cathode.

1999 ◽  
Vol 50 (7) ◽  
pp. 650-651
Author(s):  
Toshihide MIKAMI ◽  
Yutaka ISHIKAWA ◽  
Hiroshi YAMANAKA ◽  
Yoichi HIROSE
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Diamond Synthesis ◽  
Plasma Cvd ◽  
Dc Plasma
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