scholarly journals Trial of Diamond Synthesis with High-Growth Rate by DC Plasma CVD Using a Diamond Cathode.

1999 ◽  
Vol 50 (7) ◽  
pp. 650-651
Author(s):  
Toshihide MIKAMI ◽  
Yutaka ISHIKAWA ◽  
Hiroshi YAMANAKA ◽  
Yoichi HIROSE
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Diamond Synthesis ◽  
Plasma Cvd ◽  
Dc Plasma

Morphology of Diamond Films Grown by DC Plasma Jet CVD

1989 ◽  
Vol 162 ◽  
Author(s):  
Kazuaki Kurihara ◽  
Ken-Ichi Sasaki ◽  
Motonobu Kawarada ◽  
Nagaaki Koshino
Keyword(s):  
Growth Rate ◽  
Microwave Plasma ◽  
Diamond Films ◽  
High Growth ◽  
Plasma Jet ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Dc Plasma ◽  
Synthesis Conditions ◽  
Microwave Plasma Cvd

ABSTRACTIt is well known that diamond films synthesized from the gas phase have well defined crystal habits which are affected strongly by synthesis conditions. Though there have been many studies of the morphologies of diamond films synthesized by microwave plasma CVD [1,2,3], there have been relatively few reports on the morphologies of these films grown using new high growth rate techniques such as DC plasma jet CVD [4]. Morphology control is very important to keep flat surface, when producing thick diamond films by high growth rate techniques. In this paper we report our investigation of the morphology and growth of diamond films synthesized by DC plasma jet CVD.

High Growth Rate of Diamond Films by DC Plasma CVD Using Organic Compounds

1992 ◽  
Vol 9 (8) ◽  
pp. 444-447 ◽  
Author(s):  
Wang Wanlu ◽  
Gao Jinying ◽  
Liao Kejun
Keyword(s):  
Growth Rate ◽  
Organic Compounds ◽  
Diamond Films ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Dc Plasma

High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD

2001 ◽  
Vol 66 (1-4) ◽  
pp. 283-288 ◽  
Author(s):  
Koji Endo ◽  
Masao Isomura ◽  
Mikio Taguchi ◽  
Hisaki Tarui ◽  
Seiichi Kiyama
Keyword(s):  
Growth Rate ◽  
Crystalline Silicon ◽  
High Growth ◽  
High Growth Rate ◽  
Plasma Cvd ◽  
Helicon Wave ◽  
Helicon Wave Plasma

Exploring SiC Growth Limitation of Vapor-Liquid-Solid Mechanism when Using Two Different Carbon Precursors

2013 ◽  
Vol 740-742 ◽  
pp. 323-326
Author(s):  
Kassem Alassaad ◽  
François Cauwet ◽  
Davy Carole ◽  
Véronique Soulière ◽  
Gabriel Ferro
Keyword(s):  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Carbon Precursor ◽  
Growth Limitation ◽  
Vapor Liquid Solid ◽  
Partial Pressures ◽  
Vapor Liquid Solid Mechanism ◽  
Vls Growth ◽  
Vapor Liquid

Abstract. In this paper, conditions for obtaining high growth rate during epitaxial growth of SiC by vapor-liquid-solid mechanism are investigated. The alloys studied were Ge-Si, Al-Si and Al-Ge-Si with various compositions. Temperature was varied between 1100 and 1300°C and the carbon precursor was either propane or methane. The variation of layers thickness was studied at low and high precursor partial pressure. It was found that growth rates obtained with both methane and propane are rather similar at low precursor partial pressures. However, when using Ge based melts, the use of high propane flux leads to the formation of a SiC crust on top of the liquid, which limits the growth by VLS. But when methane is used, even at extremely high flux (up to 100 sccm), no crust could be detected on top of the liquid while the deposit thickness was still rather small (between 1.12 μm and 1.30 μm). When using Al-Si alloys, no crust was also observed under 100 sccm methane but the thickness was as high as 11.5 µm after 30 min growth. It is proposed that the upper limitation of VLS growth rate depends mainly on C solubility of the liquid phase.

Very High Growth Rate of 4H-SiC Using MTS as Chloride-Based Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 115-118 ◽  
Author(s):  
Henrik Pedersen ◽  
Stefano Leone ◽  
Anne Henry ◽  
Franziska Christine Beyer ◽  
Vanya Darakchieva ◽  
...  
Keyword(s):  
Growth Rate ◽  
Linear Dependence ◽  
Growth Rates ◽  
Molar Fraction ◽  
High Growth ◽  
High Growth Rate ◽  
Epitaxial Layers ◽  
Single Precursor ◽  
Very High

The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall CVD reactor, with growth rates as high as 170 µm/h at 1600°C. Since MTS contains both silicon and carbon, with the C/Si ratio 1, MTS was used both as single precursor and mixed with silane or ethylene to study the effect of the C/Si and Cl/Si ratios on growth rate and doping of the epitaxial layers. When using only MTS as precursor, the growth rate showed a linear dependence on the MTS molar fraction in the reactor up to about 100 µm/h. The growth rate dropped for C/Si < 1 but was constant for C/Si > 1. Further, the growth rate decreased with lower Cl/Si ratio.

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