Influence of electron-phonon interaction in doped silicon crystals on the root-mean-square dynamic displacement of atoms

1977 ◽  
Vol 20 (9) ◽  
pp. 1128-1131
Author(s):  
M. D. Kapustina ◽  
V. A. Panteleev ◽  
T. Yu. Markova
Keyword(s):  
Root Mean Square ◽  
Mean Square ◽  
Phonon Interaction ◽  
Dynamic Displacement ◽  
Electron Phonon Interaction ◽  
Silicon Crystals ◽  
Doped Silicon

Elastic properties and root-mean-square dynamic displacement of niobium atoms at high pressures

1983 ◽  
Vol 119 (2) ◽  
pp. K139-K142 ◽  
Author(s):  
E. M. Gololobov ◽  
E. L. Mager ◽  
Z. V. Mezhevich ◽  
L. K. Pan
Keyword(s):  
Root Mean Square ◽  
Elastic Properties ◽  
High Pressures ◽  
Mean Square ◽  
Dynamic Displacement

THE TEMPERATURE DEPENDENCE OF THE ENERGY LEVELS OF SHALLOW DONOR IMPURITIES IN SILICON

1967 ◽  
Vol 45 (4) ◽  
pp. 1421-1438 ◽  
Author(s):  
C. Y. Cheung ◽  
Robert Barrie
Keyword(s):  
Temperature Dependence ◽  
Energy Levels ◽  
Electronic States ◽  
Shallow Donor ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon ◽  
Phosphorus Doped

A calculation is made of the temperature dependence of the energy levels of shallow donor impurities in silicon. This temperature dependence arises from the electron–phonon interaction and we consider mixing only of the {1s}, {2s), and {2p0} electronic states. A comparison is made with experiment for the case of phosphorus-doped silicon.

Electron-phonon interaction in suspended highly doped silicon nanowires

2002 ◽  
Vol 13 (4) ◽  
pp. 491-494 ◽  
Author(s):  
A Tilke ◽  
L Pescini ◽  
A Erbe ◽  
H Lorenz ◽  
R H Blick
Keyword(s):  
Silicon Nanowires ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Doped Silicon

Evaluation of the internal field produced by longitudinal optic phonons in ZnSe crystals

1983 ◽  
Vol 61 (7) ◽  
pp. 1017-1020 ◽  
Author(s):  
J. Daunay ◽  
Jac. Daunay ◽  
P. Bugnet
Keyword(s):  
Room Temperature ◽  
Internal Field ◽  
Mean Square ◽  
Phonon Interaction ◽  
Electron Phonon Interaction ◽  
Longitudinal Optic ◽  
The Mean ◽  
Increasing Temperature ◽  
Franz Keldysh Effect ◽  
Longitudinal Optic Phonons

Measurements of light absorption on ZnSe single crystals, conducted from 80 K to room temperature, show that the forbidden band gap decreases with increasing temperature because of the electron–phonon interaction. It is established for temperatures ranging from 140 to 320 K that longitudinal optic (LO) and acoustic (A) phonons operate simultaneously and exclusively so that [Formula: see text]. The first term, resulting from the Franz–Keldysh effect applied to the mean square field produced by LO phonons, provides the value of this field. It reaches 105 V cm−1 at room temperature.

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