FT-IR-ATR observation of SiOH and SiH in the oxide layer on an Si wafer

1988 ◽  
Vol 94 (1-6) ◽  
pp. 431-434 ◽  
Author(s):  
Yoshikatsu Nagasawa ◽  
Hideyuki Ishida ◽  
Fusami Soeda ◽  
Akira Ishitani ◽  
Ichiro Yoshii ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Ft Ir ◽  
Si Wafer

Characterization of Inhomogeneity in Thermal Oxide SiO2 Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

2018 ◽  
Vol 924 ◽  
pp. 273-276 ◽  
Author(s):  
Masanobu Yoshikawa ◽  
Keiko Inoue ◽  
Junichiro Sameshima ◽  
Hirohumi Seki
Keyword(s):  
Fourier Transform ◽  
Oxide Layer ◽  
Layer Thickness ◽  
Phonon Mode ◽  
Fourier Transform Infrared ◽  
Blue Shift ◽  
Peak Frequency ◽  
Oxide Layer Thickness ◽  
Thermal Oxide ◽  
Ft Ir

We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with a various thickness, grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by about 5 cm−1 as the oxide-layer thickness decreased from 50-60 nm to 10 nm. The blue shift of the TO mode is considerd to be caused by interfacial compressive stresses in the oxide-layer. On the other hand, the TO phonon mode was found to dramatically decrease as the oxide-layer thickness decreased from 10 nm to 1.7 nm. The CL measurement indicates that the intensity of the CL peaks at about 460 and 490 nm attributed to oxygen vacancy centers (OVCs) for No.2 become stronger than that for No.1. From a comparison between FT-IR and CL measurements, we concluded that the red-shift of the TO phonon with decreasing the oxide-layer thickness can mainly be attributed to an increase in inhomogeneity at the SiO2/SiC interface with decreasing oxide-layer thickness.

An exchangeable Si wafer internal reflection element for FT-IR measurement of water sample

2001 ◽  
Vol 74 (1-3) ◽  
pp. 54-59 ◽  
Author(s):  
Michiko Seyama ◽  
Iwao Sugimoto ◽  
Tadashi Katoh
Keyword(s):  
Water Sample ◽  
Internal Reflection ◽  
Ft Ir ◽  
Si Wafer

FT-IR and 29Si, 27Al, and 19F MAS NMR studies of the adsorption of CdF2, ZnF2, and CuF2 onto montmorillonite K10; activity towards Friedel–Crafts alkylation

1992 ◽  
Vol 70 (9) ◽  
pp. 2398-2404 ◽  
Author(s):  
Fathi M. Asseid ◽  
Jack M. Miller ◽  
James H. Clark
Keyword(s):  
Oxide Layer ◽  
Nmr Spectra ◽  
Benzyl Chloride ◽  
Aluminium Oxide ◽  
Mas Nmr ◽  
Nmr Studies ◽  
Spectroscopic Evidence ◽  
Montmorillonite K10 ◽  
Evidence Rules ◽  
Ft Ir

ZnF2, CdF2, and CuF2 have been adsorbed onto the surface of montmorillonite K10, and the infrared and 19F, 27Al, and 29Si MAS NMR spectra of the resulting reagents over a range of loadings and activation temperatures have been obtained. CuF2 was observed to attack the SiO2 layer and form the complex CuSiF6, ZnF2 tends to attack the aluminium oxide layer, in which Zn isomorphously replaces Al, and forms AlF3 and AlF4− complexes. The spectroscopic evidence rules out the formation of any Al–F and (or) Si–F species as CdF2 is adsorbed on the surface of montmorillonite K10. The reactivity of MF2–K10 reagents towards the Friedel–Crafts reaction of benzene with benzyl chloride varies from one reagent to another. ZnF2–K10 was observed to be the most reactive and CuF2 was the least reactive.

Si Wafer Bonding: Structural Features of the Interface

2009 ◽  
Vol 156-158 ◽  
pp. 85-90 ◽  
Author(s):  
V.I. Vdovin ◽  
N.D. Zakharov ◽  
Eckhard Pippel ◽  
P. Werner ◽  
M.G. Milvidskii ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Wafer Bonding ◽  
Lattice Mismatch ◽  
Twist Angle ◽  
Structural Features ◽  
High Temperature Annealing ◽  
Bonded Interface ◽  
Transmission Electron ◽  
Kinetics Of ◽  
Si Wafer

Kinetics of oxide layer dissolution and atomic structure of Si-Si interface in Si wafer bonded structures have been investigated by transmission electron microscopy. Samples of Si(001)/SiO2/Si(001) and Si(110)/SiO2/Si(001) structures were fabricated by direct hydrophilic wafer bonding of 200 mm wafers followed by high temperature annealing. It is found that the decomposition rate of oxide layer and formation of Si-Si bonded interface depends very much on lattice mismatch and twist angle.

AC Photovoltaic Inspection of P-N Junctions having High Leakage Current

1989 ◽  
Vol 163 ◽  
Author(s):  
N. Honma ◽  
H. Shimizu ◽  
C. Munakata ◽  
M. Ogasawara
Keyword(s):  
Oxide Layer ◽  
Leakage Current ◽  
Photon Beam ◽  
Si Substrate ◽  
High Leakage Current ◽  
P Type ◽  
Field Oxide ◽  
Positively Charged ◽  
Si Wafer

AbstractA focused photon beam chopped at 2 kHz scans p-n junctions in a p-type Si wafer and ac photovoltages are capacitively measured in order to inspect homogeneities of the junctions. It is found that the ac photovoltages are high not only in the junction areas but also in the field oxide regions around the junctions when the junctions are leaky. This indicates that dense positively charged traps exist at the interface between the heavily boron implanted Si substrate and the field oxide layer around the high leakage junction, and that the traps cause the increase in both the junction leakage current and the ac photovoltage.

Optimization of SI-Wafer Cleaning and the use of Buffer-Layers for Epitaxial Growth of Sige-Layers by VLPCVD at T = 650 C

1992 ◽  
Vol 259 ◽  
Author(s):  
Matty R. Caymax ◽  
J. Poortmans ◽  
A. Van Ammel ◽  
W. Vandervorst ◽  
J. Vanhellemont ◽  
...  
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Oxide Layer ◽  
Layer Growth ◽  
Buffer Layers ◽  
Ex Situ ◽  
Wafer Cleaning ◽  
Dry Etch ◽  
Water Rinse ◽  
Si Wafer

ABSTRACTFor low-temperature epi-growth in UHV-CVD-systems, the pre-epi, ex-situ cleaning of Si-wafers is known to be very critical. Various ways of etching the chemical oxide-layer after RCA-cleaning have been analysed by SIMS-measurements of the interfacial C, 0 and Bcontamination. Layer growth was performed at 650 C under a flow of 20 sccm of silane at 0.26 Pa. The best results (C and 0 below 2 % of a monolayer, and no detectable amounts of B) were obtained with “dry” etch-procedures, i.e. in which no water-rinse was applied after a normal 2 % HF-dip, or where 1F-vapour was used instead. Growth of Si1-xGex-layers with x < 0.1 succeeds quite well on such prepared substrates; for x between 0.1 and 0.25, we have found the use of a thin, pure Si-buffer layer (150 Å) to be indispensable. For x > 0.25, the growing layer can become quite rough, although this varies in time.

Photoemission Study of Interfacial Oxidation in ZrO2/subnanometer SiONx/Si(100) Stacked Structures

2002 ◽  
Vol 747 ◽  
Author(s):  
Seiichi Miyazaki ◽  
Hiroki Yamashita ◽  
Hiroshi Nakagawa ◽  
Masanori Yamaoka
Keyword(s):  
Nitrogen Content ◽  
Oxide Layer ◽  
Barrier Layer ◽  
Oxide Thickness ◽  
Silicon Oxynitride ◽  
Experimental Fact ◽  
Nitrogen Incorporation ◽  
Ft Ir ◽  
Photoemission Study ◽  
Interfacial Oxidation

ABSTRACTFor staked structures consisting of evaporated ZrO2 and ∼0.6nm-thick silicon oxynitride formed on Si(100), the blocking capability of the silicon oxynitride against oxidation in dry-O2 anneal at 500°C has been studied as a function of nitrogen content in the barrier layer in the range within ∼11at.%. With increasing nitrogen content, the interfacial oxide thickness is decreased linearly and, to suppress the growth of the interfacial oxide layer within two monolayers, a nitrogen content of ∼10at.% is necessary. Observed efficient blocking against oxidation, even for the case with a nitrogen content as small as ∼6at.%, is attributable to the improved homogeneity in the Si-O-Si bonding features at the interface by nitrogen incorporation of a few at.%, which is suggested from the experimental fact that the bandwidth of LO phonons near the interface due to the nitrogen incorporation is decreased as obtained by FT-IR-ATR measurements.

Oxide layer on silicon carbide powder: a FT-IR investigation

1995 ◽  
Vol 349 ◽  
pp. 105-108 ◽  
Author(s):  
T. Merle-Méjean ◽  
E. Abdelmounm̂ ◽  
P. Quintard
Keyword(s):  
Silicon Carbide ◽  
Oxide Layer ◽  
Carbide Powder ◽  
Ft Ir ◽  
Silicon Carbide Powder

Detecting the Oxidation of Zircaloy Claddings by Infrared Interference

NANO ◽  
2018 ◽  
Vol 13 (02) ◽  
pp. 1850015 ◽  
Author(s):  
Hongyi Mi ◽  
Solomon Mikael ◽  
Edward Swinnich ◽  
Todd Allen ◽  
Kumar Sridharan ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Layer Thickness ◽  
Oscillation Amplitude ◽  
Oscillation Period ◽  
Oxide Layer Thickness ◽  
Optical Interference ◽  
Cross Sectional ◽  
Oxide Layers ◽  
Ft Ir ◽  
And Performance

As the expected life of dry cask storage installations increases, it becomes increasingly desirable to monitor the state and performance of the cask internals to ensure that they continue to safely contain the radioactive materials in the fuel. One aspect of this task is the monitoring of oxidation of the cladding. With this consideration in mind, Zircaloy-4 (Zr-4) cladding samples were exposed to air at 500[Formula: see text]C for various duration times to create thin corrosion oxide layers on the surface. The surfaces of the oxidized samples were then systematically scanned by Fourier Transform Infrared (FT-IR) spectroscopy to achieve the infrared (IR) interference spectra and study the relationship between the optical interference and the various thicknesses of the oxide layers. The profiles of the oxide layers were verified througth cross-sectional examination by Scanning Electron Microscopy. The IR interference patterns varied with oxide layer thickness, enabling the determination of oxide layer thickness of values, including half micron thick. Further analysis demonstrated that the interference oscillation period and the oscillation amplitude decreased with increasing oxide layer thickness. Combined with a physical model that describes the optical interference, the interference spectra were directly correlated to the oxide layer thickness quantitatively. The study provides the basis for an accurate, nondestructive and sensitive method to monitor the degree of zirconium-based cladding corrosion due to oxidation.

Characterization of Inhomogeneity in SiO2 Films on 4H-SiC Epitaxial Substrate by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

2015 ◽  
Vol 821-823 ◽  
pp. 460-463 ◽  
Author(s):  
Masanobu Yoshikawa ◽  
Hirohumi Seki ◽  
Keiko Inoue ◽  
Takuma Kobayashi ◽  
Tsunenobu Kimoto
Keyword(s):  
Fourier Transform ◽  
Oxide Layer ◽  
Layer Thickness ◽  
Polarized Light ◽  
Fourier Transform Infrared ◽  
Peak Frequency ◽  
Oxide Layer Thickness ◽  
Phonon Modes ◽  
Surface Polaritons ◽  
Ft Ir

We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with various thicknesses, grown on 4H-SiC substrates. The appearance of broad phonon modes at ~1150–1250 cm-1 in p-polarized light and their disappearance in s-polarized light confirmed that the phonon modes at ~1150–1250 cm-1originated from surface polaritons (SPPs). For the thin SiO2 film (8-nm thick), the peak frequency of the transverse optical (TO) phonon in the SiO2 film on the 4H-SiC substrate was observed at ~1080 cm-1and was higher than that in SiO2 films on the Si substrate (1074 cm-1). This suggested that the thin SiO2 film (8-nm thick) is under compressive stresses at the interface between the SiO2 film and SiC substrate. On the other hand, for the thick SiO2 films (85 and 130-nm thick), the TO phonon peak frequency tended to shift toward lower frequencies with increasing oxide layer thickness. The CL measurement indicated that the CL peak intensity at ~640 nm, attributed to non-bridging oxidation hole centers (NBOHCs), became stronger with increasing oxide layer thickness, relative to that of the CL peaks at ~460 and 490 nm due to oxygen vacancy centers (OVCs). By comparing the FT-IR and CL measurements, we concluded that the TO phonon red-shift with increasing oxide layer thickness can mainly be attributed to an increase in inhomogeneity with increasing oxide layer thickness for the thick SiO2 films.

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