Positron lifetime measurements on electron irradiation damage in amorphous Pd80Si20 and Cu50Ti50 alloys

1982 ◽  
Vol 27 (1) ◽  
pp. 31-33 ◽  
Author(s):  
J. Yli-Kauppila ◽  
P. Moser ◽  
H. Kiinzi ◽  
P. Hautojdrvi
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Irradiation Damage ◽  
Lifetime Measurements

Defects in Electron Irradiation Te-Doped GaSb Studied by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 140-142
Author(s):  
H. Li ◽  
J.Y. Ke ◽  
J.B. Pang ◽  
Bo Wang ◽  
Z. Wang
Keyword(s):  
Electron Irradiation ◽  
Irradiation Dose ◽  
Room Temperature ◽  
Positron Lifetime ◽  
Rydberg States ◽  
Average Lifetime ◽  
Shallow Trap ◽  
Lifetime Measurements ◽  
Positron Lifetime Spectroscopy ◽  
Antisite Defects

Defects induced by electron irradiation in Te-doped liquid-encapsulated Czochralski–grown GaSb were studied by the positron lifetime spectroscopy. The lifetime measurements under room temperature indicated there were VGa-related defects with a characteristic lifetime of 298 ps in the heavily Te-doped as-grown GaSb samples. The average lifetime increased with the increase of irradiation dose in lightly Te-doped GaSb,but the behavior was opposite in the heavily Te-doped samples. It should be due to the shift of Fermi level in heavily Te-doped GaSb and the occurrence of gallium vacancies in different charge states. In the temperature dependence measurements carried out on heavily Te-doped samples, we observed positron shallow trap, and this shallow trap should be attributed to positrons forming hyrogenlike Rydberg states with GaSb antisite defects.

Atomic Defects in Transition Metal Carbides and SiC Studied by Positron Annihilation

1993 ◽  
Vol 327 ◽  
Author(s):  
A. A. Rempel ◽  
H. -E. Schaefer ◽  
M. Forster ◽  
A.I. Girka
Keyword(s):  
Low Temperature ◽  
Electron Irradiation ◽  
Positron Lifetime ◽  
Group Iv ◽  
Metal Carbides ◽  
Lifetime Measurements ◽  
Transition Metal Carbides ◽  
Before And After ◽  
Radiation Induced ◽  
Subsequent Thermal Annealing

AbstractNonstoichiometric defects in carbides of the Group IV and V transition metals and radiation-induced atomic defects in SiC were studied by positron lifetime measurements before and after low-temperature (80 K) electron irradiation and subsequent thermal annealing up to 1900 K. Agglomeration of radiation-induced atomic defects which strongly depends on the energy of the irradiation electrons and subsequent decay of the agglomerates in SiC is observed.

Electron Irradiated InP: A Positron Annihilation Study

1992 ◽  
Vol 262 ◽  
Author(s):  
T. Bretagnon ◽  
S. Dannefaer ◽  
D. Kerr
Keyword(s):  
Positron Annihilation ◽  
Charge State ◽  
Electron Irradiation ◽  
Positron Lifetime ◽  
Lifetime Measurements ◽  
Positron Annihilation Study

ABSTRACTPositron lifetime measurements show that electron irradiation produces indium vacancy related defects in InP. Divacancies are also found in semi-insulating and lightly doped p and n-type materials. Temperature investigations show a change in the divacancy charge state.

Electron Irradiation Damage in Radiation-Resistant InP Solar Cells

1984 ◽  
Vol 23 (Part 1, No. 3) ◽  
pp. 302-307 ◽  
Author(s):  
Masafumi Yamaguchi ◽  
Chikao Uemura ◽  
Akio Yamamoto ◽  
Atsushi Shibukawa
Keyword(s):  
Solar Cells ◽  
Electron Irradiation ◽  
Irradiation Damage ◽  
Radiation Resistant

Electron irradiation damage in austenitic stainless steels

1991 ◽  
Vol 179-181 ◽  
pp. 526-528 ◽  
Author(s):  
Jiguang Sun ◽  
Jiapu Qian ◽  
Zhuoyong Zhao ◽  
Jiming Chen ◽  
Zengyu Xu
Keyword(s):  
Electron Irradiation ◽  
Stainless Steels ◽  
Austenitic Stainless Steels ◽  
Irradiation Damage

Study of Compensation Defects and Electron Irradiation-Induced Defects in Undoped SI-InP by Positron Lifetime Spectroscopy

2008 ◽  
Vol 607 ◽  
pp. 134-136
Author(s):  
Y.J. Zhang ◽  
Ai Hong Deng ◽  
You Wen Zhao ◽  
J. Yu ◽  
X.X. Yu ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Positron Lifetime ◽  
Deep Level ◽  
High Concentration ◽  
Positron Annihilation Lifetime ◽  
Donor Type ◽  
Positron Lifetime Spectroscopy ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

Positron annihilation lifetime (PAL) spectroscopy，photo-induced current transient spectroscopy (PICTS) and thermally stimulated current (TSC) have been employed to study the formation of compensation defects and their evolvement under iron phosphide (IP) ambience or pure phosphide (PP) ambience. In the formation of IP SI-InP, the diffusion of Fe atoms suppresses the formation of some open-volume defects. As to PP SI-InP, VInH4 complexes dissociate into acceptor vacancies VInHn(n-3)(n=0,1,2,3), which compensate residual donor type defects and make the sample semi-insulating. Electron irradiation-induced deep level defects have been studied by TSC in PP and IP SI-InP, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and PP annealed InP, IP SI-InP has a very low concentration of defects.

Thermal vacancies and positron-lifetime measurements inFe76.3Al23.7

1990 ◽  
Vol 41 (17) ◽  
pp. 11869-11874 ◽  
Author(s):  
H.-E. Schaefer ◽  
R. Würschum ◽  
M. Sǒb ◽  
T. Zák ◽  
W. Z. Yu ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Lifetime Measurements
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