Electron Irradiated InP: A Positron Annihilation Study

1992 ◽  
Vol 262 ◽  
Author(s):  
T. Bretagnon ◽  
S. Dannefaer ◽  
D. Kerr

ABSTRACTPositron lifetime measurements show that electron irradiation produces indium vacancy related defects in InP. Divacancies are also found in semi-insulating and lightly doped p and n-type materials. Temperature investigations show a change in the divacancy charge state.

1992 ◽  
Vol 270 ◽  
Author(s):  
H.-E. Schaefer ◽  
M. Forster ◽  
R. WÜrschum ◽  
F. Banhart

ABSTRACTThe present paper reports on positron lifetime measurements on Ceo/C 70 fullerite powder as a function of temperature and quasi-hydrostatic pressure in order to give an estimate of the positron annihilation site in the fullerite lattice. A single-component positron lifetime of 402 ps is observed which significantly decreases under quasi-hydrostatic pressure. From this and the soft intermolecular properties of the fullerites one can conclude that the positron is annihilated rather in the intermolecular space than inside the fullerene molecules. However, positron trapping at lattice defects, which are observed by high-resolution electron microscopy, cannot be ruled out.


2013 ◽  
Vol 22 ◽  
pp. 112-117 ◽  
Author(s):  
A. MANDAL ◽  
S. MUKHERJEE ◽  
S. PAN ◽  
A. SENGUPTA

Positron annihilation lifetime spectra (PLAS) have been measured for natural rubber polymer with different fillers (Titenium dioxide, Nanosilica and Nanoclay) as a function of filler concentration to investigate how these fillers affect the microstructure of free volume of natural rubber. The lifetime spectra is analyzed by using LT9.0 and the longest lived component(τo-Ps) is attributed to the pick- off annihilation of o-Ps in free volume sites, available mostly in the amorphous region of polymer. On the basis of the τo-Ps values the radii of the free volume holes (Rh) are calculated. The PALS results show that o-Ps lifetime as well as the size of free volume decreases with the increase of filler concentration.


Author(s):  
D. A. Perminov ◽  

The effect of phosphorus and titanium additions on the accumulation of vacancy defects in Cr16Ni15Mo3 austenitic stainless steels under electron irradiation at room temperature is studied by positron annihilation spectroscopy. It is shown that, at this temperature, phosphorus has no noticeable effect on the accumulation of vacancy defects. This is due to the low mobility of vacancies and the low concentration of impurities. Titanium, due to its high concentration, enhances the accumulation of vacancy defects during irradiation, but this effect is weak.


2008 ◽  
Vol 93 (8) ◽  
pp. 1554-1563 ◽  
Author(s):  
A. Harisha ◽  
V. Ravindrachary ◽  
R.F. Bhajantri ◽  
Ismayil ◽  
Ganesh Sanjeev ◽  
...  

2005 ◽  
Vol 483-485 ◽  
pp. 473-476 ◽  
Author(s):  
Marie France Barthe ◽  
L. Henry ◽  
S. Arpiainen ◽  
G. Blondiaux

This paper presents positron lifetime results which give information on the nature of vacancy defects induced by electron irradiation in bulk nitrogen doped (nD-nA= 2.3x1017 cm-3) Cree 6H-SiC. The electron irradiations have been performed at different energies and with different fluences from 5􀂗1017 e-cm-2 to 3􀂗1018 e-cm-2. Positron lifetime have been measured with a 22NaCl source as a function of temperature between 15 and 300 K. The lifetime spectra were analyzed as sums of two exponential lifetime components 􀁗i weighted by the intensities Ii, convoluted with the resolution function. From the temperature dependence of the lifetime spectra we can infer that several vacancy defects exist in the electron irradiated n-type 6H-SiC. The nature of detected vacancy defects depends on the electron energy.


1995 ◽  
Vol 413 ◽  
Author(s):  
C. M. Huang ◽  
J. Liu ◽  
T. C. Sandreczki ◽  
Y. C. Jean

ABSTRACTPositron annihilation lifetime measurements are made in a series of polyaniline polymers with different chemical compositions and protonation ratios at room temperature. Two positron lifetimes are observed in these materials: one is assigned to annihilation in the bulk and the other to voids created due to protonation. A relationship between conductivities and positron annihilation probabilities is found.


2001 ◽  
Vol 353-356 ◽  
pp. 537-542 ◽  
Author(s):  
Atsuo Kawasuso ◽  
F. Redmann ◽  
Reinhard Krause-Rehberg ◽  
Peter Sperr ◽  
Thomas Frank ◽  
...  

2008 ◽  
Vol 607 ◽  
pp. 140-142
Author(s):  
H. Li ◽  
J.Y. Ke ◽  
J.B. Pang ◽  
Bo Wang ◽  
Z. Wang

Defects induced by electron irradiation in Te-doped liquid-encapsulated Czochralski–grown GaSb were studied by the positron lifetime spectroscopy. The lifetime measurements under room temperature indicated there were VGa-related defects with a characteristic lifetime of 298 ps in the heavily Te-doped as-grown GaSb samples. The average lifetime increased with the increase of irradiation dose in lightly Te-doped GaSb,but the behavior was opposite in the heavily Te-doped samples. It should be due to the shift of Fermi level in heavily Te-doped GaSb and the occurrence of gallium vacancies in different charge states. In the temperature dependence measurements carried out on heavily Te-doped samples, we observed positron shallow trap, and this shallow trap should be attributed to positrons forming hyrogenlike Rydberg states with GaSb antisite defects.


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