Operating energy-measurement standard for 10.6-?m pulsed laser emission

1986 ◽  
Vol 7 (1) ◽  
pp. 39-45
Author(s):  
M. L. Kozachenko ◽  
N. P. Khatyrev ◽  
V. A. Yakovlev
1983 ◽  
Vol 26 (9) ◽  
pp. 756-759
Author(s):  
Ya. T. Zagorskii ◽  
A. F. Kotyuk ◽  
A. A. Kuznetsov ◽  
A. M. Levi

1982 ◽  
Vol 25 (7) ◽  
pp. 577-580
Author(s):  
A. G. Alekseev ◽  
V. I. Drozdov ◽  
V. I. Kukhtevich ◽  
A. I. Trubnikov

1968 ◽  
Vol 9 (5) ◽  
pp. 1215-1217
Author(s):  
N. A. Borisevich ◽  
M. V. Dubovik ◽  
A. Ya. Smirnov
Keyword(s):  

1992 ◽  
Vol 281 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
Y. Lansari ◽  
K. J. Gossett ◽  
B. Sneed ◽  
...  

ABSTRACTProperties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.


Author(s):  
Lei Wang ◽  
Hongtao Huang ◽  
Xianlin Pan ◽  
Lijuan Liu ◽  
Min Li ◽  
...  

1988 ◽  
Vol 24 (17) ◽  
pp. 1104 ◽  
Author(s):  
L. Esterowitz ◽  
R. Allen ◽  
I. Aggarwal
Keyword(s):  

2013 ◽  
Vol 6 (2) ◽  
pp. 196-200 ◽  
Author(s):  
冯刚 FENG Gang ◽  
冯国斌 FENG Guo-bin ◽  
邵碧波 SHAO Bi-bo ◽  
闫燕 YAN Yan ◽  
王振宝 WANG Zhen-bao

1968 ◽  
Vol 9 (6) ◽  
pp. 1215-1217
Author(s):  
N. A. Borisevich ◽  
M. V. Dubovik ◽  
A. Ya. Smirnov
Keyword(s):  

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