Pulsed laser emission at 2.3μm in a thulium-doped fluorozirconate fibre

1988 ◽  
Vol 24 (17) ◽  
pp. 1104 ◽  
Author(s):  
L. Esterowitz ◽  
R. Allen ◽  
I. Aggarwal
Keyword(s):  
Laser Emission ◽  
Pulsed Laser

OSIE standard means of measuring pulsed laser emission

1983 ◽  
Vol 26 (9) ◽  
pp. 756-759
Author(s):  
Ya. T. Zagorskii ◽  
A. F. Kotyuk ◽  
A. A. Kuznetsov ◽  
A. M. Levi
Keyword(s):  
Laser Emission ◽  
Pulsed Laser ◽  
Standard Means

Operating energy-measurement standard for 10.6-?m pulsed laser emission

1986 ◽  
Vol 7 (1) ◽  
pp. 39-45
Author(s):  
M. L. Kozachenko ◽  
N. P. Khatyrev ◽  
V. A. Yakovlev
Keyword(s):  
Laser Emission ◽  
Pulsed Laser ◽  
Energy Measurement ◽  
Measurement Standard

Pulsed laser emission by nitrogen atoms in an n2 — he mixture

1968 ◽  
Vol 9 (5) ◽  
pp. 1215-1217
Author(s):  
N. A. Borisevich ◽  
M. V. Dubovik ◽  
A. Ya. Smirnov
Keyword(s):  
Laser Emission ◽  
Pulsed Laser

Blue Lasers Based on II-VI Semiconductor Heterostructures

1992 ◽  
Vol 281 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
Y. Lansari ◽  
K. J. Gossett ◽  
B. Sneed ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Laser Emission ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Pulsed Laser ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Semiconductor Heterostructures ◽  
Turn On ◽  
Cw Operation

ABSTRACTProperties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.

Pulsed laser emission by nitrogen atoms in an N2-He mixture

1968 ◽  
Vol 9 (6) ◽  
pp. 1215-1217
Author(s):  
N. A. Borisevich ◽  
M. V. Dubovik ◽  
A. Ya. Smirnov
Keyword(s):  
Laser Emission ◽  
Pulsed Laser

Pulsed laser deposited nanocrystalline ZnO thin films

2000 ◽  
Vol 648 ◽  
Author(s):  
R. K. Thareja ◽  
A. Mitra ◽  
V. Ganesan ◽  
A. Gupta ◽  
P. K. Sahoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Laser Emission ◽  
Laser Action ◽  
Pulsed Laser ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Ground Pressure ◽  
Ambient Oxygen ◽  
Back Ground

AbstractWe report on random laser emission in pulsed laser deposited nanocrystalline ZnO thin films. The deposition was done on silicon and glass substrates in ambient oxygen pressure ranging from 10 mTorr to 1 Torr at room temperature. The deposited films were characterized using XRD, RBS, PL and AFM. The films grown at pressures less than 300 mTorr are found to be preferentially oriented along (002) plane. Morphology of the films deposited at different background pressures showed that the films deposited at lower pressures are significantly smoother than those at higher back ground pressure. PL intensity depends on the stoichiometry of the films and hence on oxygen pressure. Laser action was observed on optically pumping the films with 355 nm radiation. At excitation intensity above threshold, very narrow peaks are observed in the emission spectrum. The dependence of the laser emission on the size of nanocrystallites at different pressures of the ambient gas is presented.

Pulsed laser emission from helium at 95 µm

1967 ◽  
Vol 3 (4) ◽  
pp. 170-170 ◽  
Author(s):  
L. Mathias ◽  
A. Crocker ◽  
M. Wills
Keyword(s):  
Laser Emission ◽  
Pulsed Laser

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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