Pulsed Laser Emission Chemically Pumped by the Chain Reaction between Hydrogen and Fluorine

1971 ◽  
Vol 55 (5) ◽  
pp. 2466-2473 ◽  
Author(s):  
LaVerne D. Hess
Keyword(s):  
Laser Emission ◽  
Pulsed Laser ◽  
Chain Reaction

OSIE standard means of measuring pulsed laser emission

1983 ◽  
Vol 26 (9) ◽  
pp. 756-759
Author(s):  
Ya. T. Zagorskii ◽  
A. F. Kotyuk ◽  
A. A. Kuznetsov ◽  
A. M. Levi
Keyword(s):  
Laser Emission ◽  
Pulsed Laser ◽  
Standard Means

Operating energy-measurement standard for 10.6-?m pulsed laser emission

1986 ◽  
Vol 7 (1) ◽  
pp. 39-45
Author(s):  
M. L. Kozachenko ◽  
N. P. Khatyrev ◽  
V. A. Yakovlev
Keyword(s):  
Laser Emission ◽  
Pulsed Laser ◽  
Energy Measurement ◽  
Measurement Standard

Pulsed laser emission by nitrogen atoms in an n2 — he mixture

1968 ◽  
Vol 9 (5) ◽  
pp. 1215-1217
Author(s):  
N. A. Borisevich ◽  
M. V. Dubovik ◽  
A. Ya. Smirnov
Keyword(s):  
Laser Emission ◽  
Pulsed Laser

Blue Lasers Based on II-VI Semiconductor Heterostructures

1992 ◽  
Vol 281 ◽  
Author(s):  
Z. Yu ◽  
J. Ren ◽  
Y. Lansari ◽  
K. J. Gossett ◽  
B. Sneed ◽  
...  
Keyword(s):  
Ohmic Contacts ◽  
Laser Emission ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Pulsed Laser ◽  
Stimulated Emission ◽  
Blue Laser ◽  
Semiconductor Heterostructures ◽  
Turn On ◽  
Cw Operation

ABSTRACTProperties of blue laser diodes based on ZnSe-related II-VI semiconductor heterostructures are reported. At 77 K, continuous-wave (cw) operation has been achieved for lasers emitting at wavelengths as short as 470.4 nm (2.635 eV), while pulsed laser emission has been observed up to ∼200 K, for samples with uncoated facets. Measured turn-on voltages for stimulated emission at 77 K were as low as 12 V for some of the laser diodes due to improved ohmic contacts. For some particular devices, differential quantum efficiencies as high as 36% per (uncoated) facet have been obtained at 77 K.

Pulsed laser emission at 2.3μm in a thulium-doped fluorozirconate fibre

1988 ◽  
Vol 24 (17) ◽  
pp. 1104 ◽  
Author(s):  
L. Esterowitz ◽  
R. Allen ◽  
I. Aggarwal
Keyword(s):  
Laser Emission ◽  
Pulsed Laser

scholarly journals Chemical Intensification of Nonlinear Multi-Wave Interactions

1992 ◽  
Vol 12 (3-4) ◽  
pp. 199-209
Author(s):  
M. G. Galushkin ◽  
E. B. Gordon ◽  
M. S. Drozdov ◽  
K. A. Sviridov
Keyword(s):  
Laser Emission ◽  
Wave Mixing ◽  
Chain Reaction ◽  
Wave Interactions ◽  
Incident Flux ◽  
Laser Applications ◽  
Reactive Medium ◽  
Nonlinear Reflection ◽  
Secondary Reactions ◽  
Branched Chain

Nonlinear interaction of laser emission with a chemically reactive medium, in which a branched chain reaction may readily occur, has been analyzed aiming at essential intensification the contrast of photochemically induced phase gratings. For the model system CS2/O2, the degenerated four-wave mixing is theoretically studied under the assumption of CS2 photodissociation followed by subsequent secondary reactions induced by reactive photodissociation products. For varied CS2 concentrations and incident flux intensities, the dynamics of nonlinear reflection has been analyzed and same laser applications of such systems are suggested.

Pulsed laser emission by nitrogen atoms in an N2-He mixture

1968 ◽  
Vol 9 (6) ◽  
pp. 1215-1217
Author(s):  
N. A. Borisevich ◽  
M. V. Dubovik ◽  
A. Ya. Smirnov
Keyword(s):  
Laser Emission ◽  
Pulsed Laser

Pulsed laser deposited nanocrystalline ZnO thin films

2000 ◽  
Vol 648 ◽  
Author(s):  
R. K. Thareja ◽  
A. Mitra ◽  
V. Ganesan ◽  
A. Gupta ◽  
P. K. Sahoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Laser Emission ◽  
Laser Action ◽  
Pulsed Laser ◽  
Zno Thin Films ◽  
Glass Substrates ◽  
Ground Pressure ◽  
Ambient Oxygen ◽  
Back Ground

AbstractWe report on random laser emission in pulsed laser deposited nanocrystalline ZnO thin films. The deposition was done on silicon and glass substrates in ambient oxygen pressure ranging from 10 mTorr to 1 Torr at room temperature. The deposited films were characterized using XRD, RBS, PL and AFM. The films grown at pressures less than 300 mTorr are found to be preferentially oriented along (002) plane. Morphology of the films deposited at different background pressures showed that the films deposited at lower pressures are significantly smoother than those at higher back ground pressure. PL intensity depends on the stoichiometry of the films and hence on oxygen pressure. Laser action was observed on optically pumping the films with 355 nm radiation. At excitation intensity above threshold, very narrow peaks are observed in the emission spectrum. The dependence of the laser emission on the size of nanocrystallites at different pressures of the ambient gas is presented.

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