Study and realization of a pyroelectric detector for absolute pulsed laser energy measurement

1993 ◽  
Author(s):  
Oualid Touayar ◽  
Claude Morillon
Keyword(s):  
Laser Energy ◽  
Pulsed Laser ◽  
Energy Measurement ◽  
Pyroelectric Detector

Epitaxial Growth of AlN Thin Films on Silicon and Sapphire by Pulsed Laser Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
R.D. Vispute ◽  
H. Wu ◽  
K. Jagannadham ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Breakdown Field ◽  
Transmission Electron ◽  
Uv Visible ◽  
Relationship Of

ABSTRACTAIN thin films have been grown epitaxially on Si(111) and Al2O3(0001) substrates by pulsed laser deposition. These films were characterized by FTIR and UV-Visible, x-ray diffraction, high resolution transmission electron and scanning electron microscopy, and electrical resistivity. The films deposited on silicon and sapphire at 750-800°C and laser energy density of ∼ 2 to 3J/cm2 are epitaxial with an orientational relationship of AIN[0001]║ Si[111], AIN[2 110]║Si[011] and AlN[0001]║Al2O3[0001], AIN[1 2 1 0]║ Al2O3[0110] and AIN[1010] ║ Al2O3[2110]. The both AIN/Si and AIN/Al2O3 interfaces were found to be quite sharp without any indication of interfacial reactions. The absorption edge measured by UV-Visible spectroscopy for the epitaxial AIN film grown on sapphire was sharp and the band gap was found to be 6.1eV. The electrical resistivity of the films was about 5-6×l013Ω-cm with a breakdown field of 5×106V/cm. We also found that the films deposited at higher laser energy densities ≥10J/cm2 and lower temperatures ≤650°C were nitrogen deficient and containing free metallic aluminum which degrade the microstructural, electrical and optical properties of the AIN films

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

PZT Film and Si Substrate Two-Layer System Patterning Morphology by Femtosecond Pulsed Laser

2007 ◽  
Author(s):  
Shizhou Xiao ◽  
Rui Guo ◽  
Guanghua Cheng ◽  
Yalei Wu ◽  
Wenhao Huang ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Laser Energy ◽  
Threshold Model ◽  
Pulsed Laser ◽  
Direct Writing ◽  
Si Substrate ◽  
Layer System ◽  
Substrate Heating ◽  
Pzt Film ◽  
Femtosecond Pulsed Laser

In this paper, a novel PZT film patterning method by femtosecond laser is proposed. The method is different from traditional dry-etching and wet-etching technology. Femtosecond laser microfabrication technology has several advantages such as high resolution, no mask direct-writing and seldom-heating, etc. A two-layer (PZT thin film and substrate) heating and ablating threshold model is built and the relationship of PZT/Si two-layer system micro ablation morphology depending on laser pulse energy is constructed. From the model and experiment data, we obtain the suitable energy region to pattern PZT film freely without damage Si substrate. A 3μm resolution of PZT pattern is achieved in our experiment. In order to verify the fabrication available of this technology, several micro functional devices are successfully patterned by optimized femtosecond pulsed laser energy and their function are detected. The results prove that the PZT patterning quality is good.

Early Dynamics of a Laser-induced Underwater Shock Wave

2021 ◽  
Author(s):  
Guihua Lai ◽  
Siyuan Geng ◽  
Hanwen Zheng ◽  
Zhifeng Yao ◽  
Qiang Zhong ◽  
...  
Keyword(s):  
Shock Wave ◽  
Numerical Method ◽  
Cavitation Bubble ◽  
Laser Energy ◽  
Optical Breakdown ◽  
Pulsed Laser ◽  
Underwater Shock Wave ◽  
Time Resolved ◽  
High Attenuation ◽  
Nanosecond Pulsed Laser

Abstract The objective of this paper is to observe and investigate the early evolution of the shock wave, induced by a nanosecond pulsed laser in still water. A numerical method is performed to calculate the propagation of the shock wave within 1µs, after optical breakdown, based on the Gilmore model and the Kirkwood-Bethe hypothesis. The input parameters of the numerical method include the laser pulse duration, the size of the plasma and the maximally extended cavitation bubble, which are measured utilizing a high time-resolved shadowgraph system. The calculation results are verified by shock wave observation experiments at the cavitation bubble expansion stage. The relative errors of the radiuses and the velocity of the shock wave front, reach the maximum value of 45% at 5 ns after breakdown and decrease to less than 20% within 20 ns. The high attenuation characteristics of the shock wave after the optical breakdown, are predicted by the numerical method. The quick time and space evolution of the shock wave are carefully analyzed. The normalized shock wave width is found to be independent of the laser energy and duration, and the energy partitions ratio is around 2.0 using the nanosecond pulsed laser.

Computer Simulation of Pulsed Laser Ablation for YBaCuO Superconducting Films

1990 ◽  
Vol 191 ◽  
Author(s):  
Toshiyuki Nakamiya ◽  
Kenji Ebihara ◽  
P. K. John ◽  
B. Y. Tong
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Laser Energy ◽  
Pulsed Laser ◽  
The Finite Element Method ◽  
High Tc ◽  
One Dimensional ◽  
Incident Laser Energy ◽  
Krf Excimer Laser ◽  
Pulsed Laser Irradiation

ABSTRACTThe dynamics of melting and ablation of high Tc YBa2Cu3O7-x superconducting thin films flashed by a pulsed KrF excimer laser(λ=248nm) or a pulsed Nd-YAG laser (λ =1.06μ m) were studied numerically. The fundamental model during a pulsed laser irradiation was a one-dimensional heat conduction equation. The finite element method was applied to solve the equation including the temperature dependence of the thermal conductivity of YBaCuO thin films. In addition, the microstructure of YBa2Cu3O7-x bulk(l.5mm thick) flashed by a pulsed XeCl excimer laser (λ =308nm) was investigated by scanning electron microscopy (SEM) in order to estimate the threshold incident laser energy density for surface melting and ablation. The good agreements between the numerical calculations and the experimental results were obtained.

scholarly journals Pulsed laser energy in the management of multiple pulmonary metastases

1967 ◽  
Vol 54 (5) ◽  
pp. 707-713 ◽  
Author(s):  
John Peter Minton ◽  
Neil C. Andrews ◽  
John E. Jesseph
Keyword(s):  
Pulmonary Metastases ◽  
Laser Energy ◽  
Pulsed Laser
Sign in / Sign up

Export Citation Format

Share Document