Charge-carrier redistribution in inhomogeneous semiconductor structures under the action of a Lorentz force

1988 ◽  
Vol 31 (4) ◽  
pp. 360-367
Author(s):  
A. M. Belyantsev ◽  
A. L. Zheleznyak ◽  
V. R. Kogan ◽  
V. A. Kozlov
Keyword(s):  
Charge Carrier ◽  
Lorentz Force ◽  
Semiconductor Structures ◽  
Inhomogeneous Semiconductor ◽  
Carrier Redistribution

scholarly journals Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

2006 ◽  
Vol 74 (24) ◽  
Author(s):  
C. Cornet ◽  
M. Hayne ◽  
P. Caroff ◽  
C. Levallois ◽  
L. Joulaud ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Charge Carrier ◽  
Coupled Quantum Dots ◽  
Carrier Redistribution

Interface states in inhomogeneous semiconductor structures

1995 ◽  
Vol 165 (7) ◽  
pp. 799 ◽  
Author(s):  
Boris A. Volkov ◽  
B.G. Idlis ◽  
M.Sh. Usmanov
Keyword(s):  
Interface States ◽  
Semiconductor Structures ◽  
Inhomogeneous Semiconductor

Carrier redistribution and nonlinear SHF properties of inhomogeneous semiconductor films

1988 ◽  
Vol 31 (9) ◽  
pp. 799-803
Author(s):  
A. M. Belyantsev ◽  
V. A. Valov ◽  
M. N. Drozdov ◽  
A. L. Zheleznyak ◽  
V. A. Kozlov ◽  
...  
Keyword(s):  
Semiconductor Films ◽  
Inhomogeneous Semiconductor ◽  
Carrier Redistribution

Roughness of electronic interfaces in Ga As p-n multilayers investigated by cross-sectional scanning tunneling microscopy

2002 ◽  
Vol 719 ◽  
Author(s):  
N. D. Jäger ◽  
K. Urban ◽  
E. R. Weber ◽  
Ph. Ebert
Keyword(s):  
Charge Carrier ◽  
Scanning Tunneling Microscopy ◽  
Fermi Energy ◽  
Scanning Tunneling ◽  
Dopant Atom ◽  
Tunneling Microscopy ◽  
Cross Sectional ◽  
Semiconductor Structures ◽  
Dopant Atoms ◽  
The Individual

AbstractWe investigated the roughness of the electronic interfaces of GaAs p-n multilayers using cross-sectional scanning tunneling microscopy. We demonstrate that these interfaces exhibit a much larger roughness than the underlying essentially perfect ‘metallurgical’ interface, due to the individual long range electrostatic screening fields around each dopant atom near the interface and due to a clustering of dopant atoms. The clustering and the inherently connected local lack of dopant atoms gives rise to charge carrier depletion zones extending locally through entire nominally homogeneously doped layers once the layer thickness is close to the cluster dimensions. Thus, local variations in the dopant atom distribution limit the precision of the spatial and energetic positioning of the Fermi energy in nanoscale semiconductor structures.

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