Carrier redistribution and nonlinear SHF properties of inhomogeneous semiconductor films

1988 ◽  
Vol 31 (9) ◽  
pp. 799-803
Author(s):  
A. M. Belyantsev ◽  
V. A. Valov ◽  
M. N. Drozdov ◽  
A. L. Zheleznyak ◽  
V. A. Kozlov ◽  
...  
Keyword(s):  
Semiconductor Films ◽  
Inhomogeneous Semiconductor ◽  
Carrier Redistribution

Propagation of exciton polaritons in inhomogeneous semiconductor films

1999 ◽  
Vol 60 (24) ◽  
pp. 16788-16798 ◽  
Author(s):  
Guillaume Malpuech ◽  
Alexey Kavokin ◽  
Giovanna Panzarini
Keyword(s):  
Semiconductor Films ◽  
Exciton Polaritons ◽  
Inhomogeneous Semiconductor

Homogenization of Organic Semiconductor Films Formed by Vertical Electro-spray Deposition

2020 ◽  
Vol 140 (4) ◽  
pp. 179-185
Author(s):  
Hiroshi Yamauchi ◽  
Yugo Okada ◽  
Takashi Tadokoro ◽  
Kazuhiro Kudo
Keyword(s):  
Organic Semiconductor ◽  
Spray Deposition ◽  
Semiconductor Films

Carrier Redistribution Analysis of Gate-Biased SiC Power-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2015 ◽  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho
Keyword(s):  
Cross Section ◽  
Measurement System ◽  
Higher Order ◽  
Depletion Layer ◽  
Gate Bias ◽  
Power Mosfet ◽  
Nonlinear Dielectric ◽  
Voltage Dependent ◽  
Carrier Redistribution ◽  
Source Voltage

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

Fabricating Ultra-Flexible Photodetectors at Neutral Mechanical Plane by Encapsulation

2021 ◽  
Author(s):  
Guomin Ding ◽  
Honglei Chen ◽  
Zuxi Yu ◽  
Nan Liu ◽  
Min Wang
Keyword(s):  
Semiconductor Films

The center plane inside a bending material has no strain, which is known as neutral mechanical plane. Based on this concept, herein, we achieve ultra-flexible semiconductor films based photodetectors at...

scholarly journals Improved Negative Bias Stress Stability of Sol–Gel-Processed Li-Doped SnO2 Thin-Film Transistors

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1629
Author(s):  
Hyeon-Joong Kim ◽  
Do-Won Kim ◽  
Won-Yong Lee ◽  
Sin-Hyung Lee ◽  
Jin-Hyuk Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Sno2 Thin Film ◽  
Negative Bias ◽  
Semiconductor Films ◽  
Saturation Regime ◽  
Si Substrates ◽  
Ionic Size

In this study, sol–gel-processed Li-doped SnO2-based thin-film transistors (TFTs) were fabricated on SiO2/p+ Si substrates. The influence of Li dopant (wt%) on the structural, chemical, optical, and electrical characteristics was investigated. By adding 0.5 wt% Li dopant, the oxygen vacancy formation process was successfully suppressed. Its smaller ionic size and strong bonding strength made it possible for Li to work as an oxygen vacancy suppressor. The fabricated TFTs consisting of 0.5 wt% Li-doped SnO2 semiconductor films delivered the field-effect mobility in a 2.0 cm2/Vs saturation regime and Ion/Ioff value of 1 × 108 and showed enhancement mode operation. The decreased oxygen vacancy inside SnO2 TFTs with 0.5 wt% Li dopant improved the negative bias stability of TFTs.

Thermally Tuning Terahertz Surface Plasmon Polaritons in Corrugated Semiconductor Films

2009 ◽  
Vol 48 (4) ◽  
pp. 042302
Author(s):  
Xin Wu ◽  
Ruwen Peng ◽  
De Li ◽  
Ruili Zhang ◽  
Renhao Fan ◽  
...  
Keyword(s):  
Surface Plasmon ◽  
Surface Plasmon Polaritons ◽  
Semiconductor Films ◽  
Plasmon Polaritons
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