Fabrication of a Large-Area Hierarchical Structure Array by Combining Replica Molding and Atmospheric Pressure Plasma Etching

2015 ◽  
Vol 2 (11) ◽  
pp. 1500141 ◽  
Author(s):  
Bong Kuk Lee ◽  
In-Bok Baek ◽  
Byeong-Jun Lee ◽  
Yarkyeon Kim ◽  
Won Ick Jang ◽  
...  
Keyword(s):  
Hierarchical Structure ◽  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Large Area ◽  
Replica Molding ◽  
Pressure Plasma ◽  
Structure Array

scholarly journals Selective Plasma Etching of Polymer-Metal Mesh Foil in Large-Area Hydrogen Atmospheric Pressure Plasma

2020 ◽  
Vol 10 (20) ◽  
pp. 7356
Author(s):  
Richard Krumpolec ◽  
Jana Jurmanová ◽  
Miroslav Zemánek ◽  
Jakub Kelar ◽  
Dušan Kováčik ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Ambient Air ◽  
Wire Mesh ◽  
Metal Composite ◽  
Large Area ◽  
Pressure Plasma ◽  
Polymer Metal ◽  
Metal Wires

We present a novel method of surface processing of complex polymer-metal composite substrates. Atmospheric-pressure plasma etching in pure H2, N2, H2/N2 and air plasmas was used to fabricate flexible transparent composite poly(methyl methacrylate) (PMMA)-based polymer film/Ag-coated Cu metal wire mesh substrates with conductive connection sites by the selective removal of the thin (~10–100 nm) surface PMMA layer. To mimic large-area roll-to-roll processing, we used an advanced alumina-based concavely curved electrode generating a thin and high-power density cold plasma layer by the diffuse coplanar surface barrier discharge. A short 1 s exposure to pure hydrogen plasma, led to successful highly-selective etching of the surface PMMA film without any destruction of the Ag-coated Cu metal wires embedded in the PMMA polymer. On the other hand, the use of ambient air, pure nitrogen and H2/N2 plasmas resulted in undesired degradation both of the polymer and the metal wires surfaces. Since it was found that the etching efficiency strongly depends on the process parameters, such as treatment time and the distance from the electrode surface, we studied the effect and performance of these parameters.

Trajectory effect on the properties of large area ZnO thin films deposited by atmospheric pressure plasma jet

2014 ◽  
Vol 314 ◽  
pp. 1074-1081 ◽  
Author(s):  
Jia-Yang Juang ◽  
Tung-Sheng Chou ◽  
Hsin-Tien Lin ◽  
Yuan-Fang Chou ◽  
Chih-Chiang Weng
Keyword(s):  
Thin Films ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Zno Thin Films ◽  
Atmospheric Pressure Plasma Jet ◽  
Large Area ◽  
Pressure Plasma

Dicing of SiC Wafer by Atmospheric-Pressure Plasma Etching Process with Slit Mask for Plasma Confinement

2014 ◽  
Vol 778-780 ◽  
pp. 759-762 ◽  
Author(s):  
Yasuhisa Sano ◽  
Hiroaki Nishikawa ◽  
Yuu Okada ◽  
Kazuya Yamamura ◽  
Satoshi Matsuyama ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Removal Rate ◽  
Atmospheric Pressure Plasma ◽  
Etching Process ◽  
Plasma Confinement ◽  
Plasma Etching Process ◽  
Pressure Plasma ◽  
High Removal Rate ◽  
Sic Wafer

Silicon carbide (SiC) is a promising semiconductor material for high-temperature, high-frequency, high-power, and energy-saving applications. However, because of the hardness and chemical stability of SiC, few conventional machining methods can handle this material efficiently. A plasma chemical vaporization machining (PCVM) technique is an atmospheric-pressure plasma etching process. We previously proposed a novel style of PCVM dicing using slit apertures for plasma confinement, which in principle can achieve both a high removal rate and small kerf loss, and demonstration experiments were performed using a silicon wafer as a sample. In this research, some basic experiments were performed using 4H-SiC wafer as a sample, and a maximum removal rate of approximately 10 μm/min and a narrowest groove width of 25 μm were achieved. We also found that argon can be used for plasma generation instead of expensive helium gas.

Remotely floating wire-assisted generation of high-density atmospheric pressure plasma and SF6-added plasma etching of quartz glass

2019 ◽  
Vol 125 (6) ◽  
pp. 063304 ◽  
Author(s):  
Thi-Thuy-Nga Nguyen ◽  
Minoru Sasaki ◽  
Hidefumi Odaka ◽  
Takayoshi Tsutsumi ◽  
Kenji Ishikawa ◽  
...  
Keyword(s):  
Quartz Glass ◽  
Plasma Etching ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
High Density ◽  
Pressure Plasma

Large area ashing process using an atmospheric pressure plasma

2011 ◽  
Vol 519 (20) ◽  
pp. 6746-6749 ◽  
Author(s):  
Seungryul Yoo ◽  
Taihyeop Lho ◽  
Dong Chan Seok ◽  
Yong Cheol Hong ◽  
Bongju Lee
Keyword(s):  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Large Area ◽  
Pressure Plasma
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