Temperature and concentration dependence of epitaxial growth rate in Sb and Ga implanted Si

1983 ◽  
Vol 31 (3) ◽  
pp. 157-160 ◽  
Author(s):  
S. U. Campisano ◽  
Chu Te Chang
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Concentration Dependence

A polycentric growth model of gallium arsenide epitaxial layers from the gas phase with simultaneous diffusion, adsorption and chemical reaction

1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma
Keyword(s):  
Growth Rate ◽  
Gallium Arsenide ◽  
Epitaxial Growth ◽  
Gas Phase ◽  
Surface Reaction ◽  
Quantitative Description ◽  
The Other ◽  
Rate Equations ◽  
Impact Interaction ◽  
Partial Pressures

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.

Development of Vertical 3×2〞LPCVD System for Fast Epitaxial Growth on 4H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 105-108 ◽  
Author(s):  
Wan Shun Zhao ◽  
Guo Sheng Sun ◽  
Hai Lei Wu ◽  
Guo Guo Yan ◽  
Liu Zheng ◽  
...  
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Growth Process ◽  
Chemical Vapor ◽  
Low Pressure ◽  
High Quality ◽  
Pressure Chemical ◽  
Homoepitaxial Layers

A vertical 3×2〞low pressure chemical vapor deposition (LPCVD) system has been developed to realize fast epitaxial growth of 4H-SiC. The epitaxial growth process was optimized and it was found that the growth rate increases with increasing C/Si ratio and tends to saturate when C/Si ratio exceeded 1. Mirror-like thick 4H-SiC homoepitaxial layers are obtained at 1500 °C and C/Si ratio of 0.5 with a growth rate of 25 μm/h. The minimum RMS roughness is 0.20 nm and the FWHM of rocking curves of epilayers grown for 1 hour and 2 hours are 26.2 arcsec and 32.4 arcsec, respectively. These results indicate that high-quality thick 4H-SiC epilayers can be grown successfully on the off-orientation 4H-SiC substrates.

Modelling of epitaxial growth rate of silicon by vapour phase epitaxy

1990 ◽  
Vol 21 (5) ◽  
pp. 29-39 ◽  
Author(s):  
A.N. Daw ◽  
D.K. Pal ◽  
M.K. Kowar
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy

Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates

2011 ◽  
Vol 1396 ◽  
Author(s):  
Suzuka Nishimura ◽  
Muneyuki Hirai ◽  
Kazutaka Terashima
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Cubic Gan ◽  
Gan On Si

ABSTRACTWe have focused to grow cubic GaN (c-GaN) on Si(100) substrates using boronmonophosphide (BP) buffer crystals. The growth of GaN was carried out by MOVPE on BP/Si(100) substrate of 2 inches in diameter. By the several evaluations, it was recognized that when the growth temperature is around 750˚C, c-GaN was dominant. The typical growth rate was about 0.5μm/h. We obtained c-GaN layer over 2.5μm thick without cracking.

Nonlinear increase in silicon epitaxial growth rate in a SiHCl3H2 system under atmospheric pressure

1997 ◽  
Vol 182 (3-4) ◽  
pp. 352-362 ◽  
Author(s):  
Hitoshi Habuka ◽  
Masatake Katayama ◽  
Manabu Shimada ◽  
Kikuo Okuyama
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Atmospheric Pressure ◽  
Nonlinear Increase
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